相关论文: (Ga,Mn)As under pressure: a first-principles inves…

We provide experimental evidence that the upper limit of ~110 K commonly observed for the Curie temperature T_C of Ga(1-x)Mn(x)As is caused by the Fermi-level-induced hole saturation. Ion channeling, electrical and magnetization…

Various experimental results providing information on thermodynamic density of states in (Ga,Mn)As are analyzed theoretically assuming that holes occupy GaAs-like valence bands. Allowing for Gaussian fluctuations of magnetization, the…

Using angle resolved photoemission we have investigated annealing-induced changes in Ga(1-x)Mn(x)As with x = 0.05. We find that the position of the Fermi energy is a function of annealing time and temperature. It is also established that…

We report on a monotonic reduction of Curie temperature in dilute ferromagnetic semiconductor (Ga,Mn)As upon a well controlled chemical-etching/oxidizing thinning from 15 nm down to complete removal of the ferro- magnetic response. The…

We investigated pressure effects on the nontrivial heavy-fermion antiferromagnet CeMnSi by means of electrical resistivity and powder X-ray diffraction. With increasing pressure, the antiferromagnetic order of Mn (T_N ~ 240 K at ambient…

We present the manipulation of magnetic and electrical properties of (Ga,Mn)As by the adsorption of dye-molecules as a first step towards the realization of light-controlled magnetic-semiconductor/dye hybrid devices. A significant lowering…

We report on the magnetic and the electronic properties of the prototype dilute magnetic semiconductor Ga$_{1-x}$Mn$_x$As using infrared (IR) spectroscopy. Trends in the ferromagnetic transition temperature $T_C$ with respect to the IR…

Using angle-resolved photoemission, we have investigated the development of the electronic structure and the Fermi level pinnning in Ga$_{1-x}$Mn$_{x}$As with Mn concentrations in the range 1--6%. We find that the Mn-induced changes in the…

For the prototype diluted ferromagnetic semiconductor (Ga,Mn)As, there is a fundamental concern about the electronic states near the Fermi level, i.e., whether the Fermi level resides in a well-separated impurity band derived from Mn doping…

(Ga,Mn)As and related diluted magnetic semiconductors play a major role in spintronics research because of their potential to combine ferromagnetism and semiconducting properties in one physical system. Ferromagnetism requires ~1-10% of…

The magnetization and hole distribution of Mn clusters in (Ga,Mn)As are investigated by all-electron total energy calculations using the projector augmented wave method within the density-functional formalism. It is found that the…

Although InP and GaAs have very similar band-structure their magnetic properties appear to drastically differ. Critical temperatures in (In,Mn)P are much smaller than that of (Ga,Mn)As and scale linearly with Mn concentration. This is in…

We investigate the current debate on the Mn valence in Ga$_{1-x}$Mn$_x$N, a diluted magnetic semiconductor (DMSs) with a potentially high Curie temperature. From a first-principles Wannier-function analysis, we unambiguously find the Mn…

Using dc and ac magnetometry, the pressure dependence of the magnetization of the three-dimensional antiferromagnetic coordination polymer Mn(N(CN)$_{2}$)$_{2}$ was studied up to 12 kbar and down to 8K. The magnetic transition temperature,…

A remarkable progress towards functional ferromagnetic semiconductor materials for spintronics has been achieved in p-type (Ga,Mn)As. Robust hole-mediated ferromagnetism has, however, been observed also in other III-V hosts such as…

Ion implantation of Mn ions into hole-doped GaP has been used to induce ferromagnetic behavior above room temperature for optimized Mn concentrations near 3 at.%. The magnetism is suppressed when the Mn dose is increased or decreased away…

The effect of modulation doping by Be on the ferromagnetic properties of Ga(1-x)Mn(x)As is investigated in Ga(1-x)Mn(x)As/Ga(1-y)Al(y)As heterojunctions and quantum wells. Introducing Be acceptors into the Ga(1-y)Al(y)As barriers leads to…

Magnetic susceptibility $\chi$ of Bi$_{2-x}$Mn$_{x}$Se$_3$ ($x = 0.01-0.2$) was measured in the temperature range $4.2-300$ K. For all the samples, a Curie-Weiss behaviour of $\chi(T)$ was revealed with effective magnetic moments of Mn ions…

Resistance measurements on single crystals of CaK(Fe$_{1-x}$Mn$_x$)$_4$As$_4$ ($x$ = 0.024) were performed under hydrostatic pressure up to 5.15 GPa. The pressure dependence of the magnetic and superconducting transition temperatures and…

In Pr$_{0.7}$Ca$_{0.3}$MnO$_{3}$, pressure induces reentrant magnetic and electronic state changes in the range 1 atm to $\sim$ 6 GPa. The metal-insulator and magnetic transition temperatures coincide from $\sim$1 to 5 GPa, decouple outside…