相关论文: Magnetic coherent tunnel junctions with periodic g…
The exceptional properties of two-dimensional (2D) magnet materials present a novel approach to fabricate functional magnetic tunnel junctions (MTJ) by constructing full van der Waals (vdW) heterostructures with atomically sharp and clean…
We investigated dependence of tunnel magnetoresistance effect in CoFeB/MgO/CoFeB magnetic tunnel junctions on Ar pressure during MgO-barrier sputtering. Sputter deposition of MgO-barrier at high Ar pressure of 10 mTorr resulted in smooth…
In the past few years the phenomenon of spin dependent tunneling (SDT) in magnetic tunnel junctions (MTJs) has aroused enormous interest and has developed into a vigorous field of research. The large tunneling magnetoresistance (TMR)…
Half-metallic Co-based full Heusler alloys have captured considerable attention of the researchers in the realm of spintronic applications, owing to their remarkable characteristics such as exceptionally high spin polarization at Fermi…
We propose the use of resonant tunneling as a route to enhance the spin-transfer torque switching characteristics of magnetic tunnel junctions. The proposed device structure is a resonant tunneling magnetic tunnel junction based on a…
The tunneling magnetoresistance (TMR) of a hexagonal array of dipolar coupled anisotropic magnetic nanoparticles is studied using a resistor network model and a realistic micromagnetic configuration obtained by Monte Carlo simulations.…
We present the concept of ferroelectric tunnel junctions (FTJs). These junctions consist of two metal electrodes separated by a nanometer-thick ferroelectric barrier. The current-voltage characteristics of FTJs are analyzed under the…
The ordinary magnetoresistance (MR) of doped semiconductors is positive and quadratic in a low magnetic field, B, as it should be in the framework of the Boltzmann kinetic theory or in the conventional hopping regime. We observe an unusual…
We have experimentally and theoretically investigated the spin transport in Fe/Mg/MgO/MgAl2O4/n+-Si(001) ferromagnetic tunnel junctions on a Si substrate, by systematically varying the thickness combination of amorphous MgO and MgAl2O4…
The authors studied an effect of ferromagnetic (Co20Fe60B20 or Fe) layer insertion on tunnel magnetoresistance (TMR) properties of MgO-barrier magnetic tunnel junctions (MTJs) with CoFe/Pd multilayer electrodes. TMR ratio in MTJs with…
In this paper we analyze different contributions to the magnetoresistance of magnetic tunneling junctions at low voltages. A substantial fraction of the resistance drop with voltage can be ascribed to variations of the density of states and…
There are pressing problems with traditional computing, especially for accomplishing data-intensive and real-time tasks, that motivate the development of in-memory computing devices to both store information and perform computation.…
Here we demonstrate that both, tunnel magneto resistance (TMR) and resistive switching (RS), can be observed simultaneously in nano-scale magnetic tunnel junctions. The devices show bipolar RS of 6 % and TMR ratios of about 100 %. For each…
We investigate the tunneling magnetoresistance in magnetic tunnel junctions (MTJs) comprised of Weyl semimetal contacts. We show that chirality-magnetization locking leads to a gigantic tunneling magnetoresistance ratio, an effect that does…
We propose a new class of non-uniform superlattice magnetic tunnel junctions (Nu-SLTJs) with the Linear, Gaussian, Lorentzian, and P\"oschl-teller width and height based profiles manifesting a sizable enhancement in the TMR($\approx…
We present a circuit design of a spintronic oscillator based on magnetic tunnel junction. In this design, a dc current is passed through a magnetic tunnel junction which is connected to a feed-back wire below it. Any fluctuation in the…
Complex oxide systems have attracted considerable attention because of their fascinating properties, including the magnetic ordering at the conducting interface between two band insulators, such as LaAlO3 (LAO) and SrTiO3 (STO). However,…
We report the observation of tunneling anisotropic magnetoresistance (TAMR) in an organic spin-valve-like structure with only one ferromagnetic electrode. The device is based on a new high mobility perylene diimide-based n-type organic…
The 'Brillouin zone spin filtering' mechanism of enhanced tunneling magnetoresistance (TMR) is described for magnetic tunnel junctions (MTJ) and studied on an example of the MTJ with hcp Co electrodes and hexagonal BN (h-BN) spacer. Our…
Control of magnetism without using magnetic fields enables large-scale integration of spintronic devices for memory, computation and communication in the beyond-CMOS era. Mechanisms including spin torque transfer, spin Hall effect, and…