相关论文: Radiation Tolerance of 65nm CMOS Transistors

Complementary metal-oxide-semiconductor (CMOS) detectors are a competitive choice for current and upcoming astronomical missions. To understand the performance variations of CMOS detectors in space environment, we investigate the total…

This paper presents the experimental results of $17~MeV$ proton irradiation on a $60~GHz$ low power, half-duplex transceiver (TRX) chip implemented in $65~nm$ CMOS technology. It supports short range point-to-point data rate up to $6~Gbps$…

Complementary metal-oxide-semiconductor (CMOS) sensors are a competitive choice for future X-ray astronomy missions. Typically, CMOS sensors on space astronomical telescopes are exposed to a high dose of irradiation. We investigate the…

The radiation response of a 0.25 um silicon-on-sapphire CMOS technology is characterized at the transistor and circuit levels utilizing both standard and enclosed layout devices. Device-level characterization showed threshold voltage change…

The total dose radiation and annealing responses of the back transistor of Silicon-On-Insulator (SOI) pMOSFETs have been studied by comparing with those of the back transistor of SOI nMOSFETs fabricated on the same wafer. The transistors…

The total ionizing radiation (TID) response of commercial NPN silicon germanium hetero-junction bipolar transistors (SiGe HBTs) produced domestic were investigated under the dose rate of 800mGy(Si)/s and 1.3mGy(Si)/s with Co-60 gamma…

The ATLAS Inner Tracker (ITk) upgrade for the High-Luminosity LHC (HL-LHC) requires a radiation-tolerant pixel readout chip, which must withstand a total ionising dose (TID) of up to 1 Grad. The readout ASIC for the ITk upgrade has been…

Magnetic refrigeration based on the magnetocaloric effect at room temperature is one of the most attractive alternative to the current gas compression/expansion method routinely employed. Nevertheless, in giant magnetocaloric materials,…

We study the optical properties of glass exposed to ionizing radiation, as it occurs in the space environment. 24 glass types have been considered, both space qualified and not space qualified. 72 samples (3 for each glass type) have been…

We report on the initial results of an experiment to determine the effects of proton radiation damage on an X-ray hybrid CMOS detector (HCD). The device was irradiated at the Edwards Accelerator Lab at Ohio University with 8 MeV protons, up…

Cryogenic characterization and modeling of 0.18um CMOS technology (1.8V and 5V) are presented in this paper. Several PMOS and NMOS transistors with different width to length ratios(W/L) were extensively characterized under various bias…

One consequence of the continued downwards scaling of transistors is the reliance on only a few discrete atoms to dope the channel, and random fluctuations of the number of these dopants is already a major issue in the microelectonics…

This paper describes the radiation response and I-V characteristics of the stacked p-MNOS based RADFETs measured at different dose rates and irradiation temperatures. It is shown that the enhanced charge trapping takes place at the…

Throughout a typical Earth orbit a satellite is constantly bombarded by radiation with trapped and solar protons being of particular concern as they gradually damage the focal plane devices throughout the mission and degrade their…

The dual-channel multi-mode 850 nm optical Miniature Transmitter (MTx) is developed for data transmission of the ATLAS LAr calorimeter readout at LHC. The MTx's are exposed to the radiation field of proton-proton collisions, therefore, the…

The increase of the leakage current of NMOS transistors during exposure to ionizing radiation is known and well studied. Radiation hardness by design techniques have been developed to mitigate this effect and have been successfully used.…

Electrical characterization of few-layer MoS2 based field effect transistors with Ti/Au electrodes is performed in the vacuum chamber of a scanning electron microscope in order to study the effects of electron beam irradiation on the…

Conventional CMOS technology operated at cryogenic conditions has recently attracted interest for its uses in low-noise electronics. We present one of the first characterizations of 180 nm CMOS technology at a temperature of 100 mK,…

We report Kondo resonances in the conduction of single-molecule transistors based on transition metal coordination complexes. We find Kondo temperatures in excess of 50 K, comparable to those in purely metallic systems. The observed gate…

This paper is devoted to the study of a degradation of CsI(Tl)crystals scintillation characteristics under irradiation with gamma-quanta at the uniformly distributed absorbed dose up to 3700 rad. The sample set consisted of 25 crystals of…