相关论文: First-principles calculations of indirect Auger re…
The rate at which excited charge carriers relax to their equilibrium state affects many aspects of the performance of nanoscale devices, including switching speed, carrier mobility and luminescent efficiency. Better understanding of the…
Direct and inverse Auger scattering are amongst the primary processes that mediate the thermalization of hot carriers in semiconductors. These two processes involve the annihilation or generation of an electron-hole pair by exchanging…
We present detailed theoretical and experimental studies of Auger recombination in narrow-gap mercury cadmium telluride quantum wells (HgCdTe QWs). We calculate the Auger recombination probabilities as functions of non-equilibrium carrier…
We report a numerical study of the effect of interface alloying and band-alignment on the Auger recombination processes of core/shell nanocrystals. Numerical calculations are carried out using a two-band Kane Hamiltonian. Smooth interfaces…
We study the effects of compressive and tensile biaxial strain on direct and phonon-assisted Auger-Meitner recombination (AMR) in silicon using first-principles calculations. We find that the application of strain has a non-trivial effect…
For Si and Ge nanocrystals (NCs) embedded in wide band-gap matrices, Auger recombination (AR) and carrier multiplication (CM) lifetimes are computed exactly in a three-dimensional real space grid using empirical pseudopotential wave…
In this letter, we present non-degenerate ultrafast optical pump-probe studies of the carrier recombination dynamics in MoS$_{2}$ monolayers. By tuning the probe to wavelengths much longer than the exciton line, we make the probe…
The peculiar electron dispersion in Dirac materials makes lowest-order Auger processes prohibited or marginally prohibited by energy and momentum conservation laws. Thus, Auger recombination (AR) in these materials is very sensitive to…
In this work, we provide a detailed analysis of phosphorene performance as n-type and p-type active materials. The study is based on first principles calculation of phosphorene electronic structure, and resulting electron and hole…
Recent experiments have demonstrated that for a quantum dot in an optical resonator off-resonant cavity mode emission can occur even for detunings of the order of 10 meV. We show that Coulomb mediated Auger processes based on additional…
We report on the direct measurement of hot electrons generated in the active region of blue light-emitting diodes grown by ammonia molecular beam epitaxy by electron emission spectroscopy. The external quantum efficiency of these devices is…
Photoelectron spectroscopy is an important tool for the development of new materials. However, especially for nitride semiconductors, the formation of surface oxides, surface band bending as well as the lack of a suitable charge reference…
In a semiconductor heterostructure with type II energy band alignment, the spatial separation between electrons and holes slows down their radiative recombination. With increasing excitation intensity, Auger recombination quickly becomes…
In a radiative Auger process, optical decay is accompanied by simultaneous excitation of other carriers. The radiative Auger process gives rise to weak red-shifted satellite peaks in the optical emission spectrum. These satellite peaks have…
Understanding the origin of hot carrier relaxation in nanowires (NWs) with one-dimensional (1D) geometry is significant for designing efficient hot carrier solar cells with such nanostructures. Here, we study the influence of Auger heating…
Auger parameter analysis provides in-depth information about the electronic and chemical bonding properties of TiN and AlN thin films, which are relevant across a wide range of technologies. Meaningful interpretation and analysis of the…
One-dimensional structures such as nanowires (NWs) show great promise in tailoring the rates of hot carrier thermalization in semiconductors with important implications for the design of efficient hot carrier absorbers. However, fabrication…
Trap-assisted nonradiative recombination has been shown to limit the efficiency of optoelectronic devices. While substitutional carbon ($\mathrm{C_N}$) has been suggested to be a nonradiative recombination center in GaN devices, a complete…
Radiative and non-radiative charge carrier recombination in thin-film diodes plays a key role in determining the efficiency of electronic devices made of next generation semiconductors such as organic, perovskite and nanocrystals. In this…
Defect-assisted recombination is an important limitation on efficiency of optoelectronic devices. However, since nonradiative capture rates decrease exponentially with energy of the transition, the mechanisms by which such recombination can…