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相关论文: Electronic transport and dynamics in correlated he…

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The Hubbard model describes interacting electrons on a lattice,a situation which occurs in various solid state materials and devices. The aim of the present paper is to briefly discuss this model and its applications in the study of…

材料科学 · 物理学 2010-01-20 V. Celebonovic

A heterostructure of a semi-infinite metal and a Mott insulator is considered. It is supposed that both materials have an identical lattice spacing and hopping integrals and differ in the Hubbard repulsion which is negligible in the metal…

强关联电子 · 物理学 2015-05-13 A. Sherman , N. Voropajeva

We consider the dimer Hubbard model within Dynamical Mean Field Theory to study the interplay and competition between Mott and Peierls physics. We describe the various metal-insulator transition lines of the phase diagram and the break down…

强关联电子 · 物理学 2018-01-17 O. Nájera , M. Civelli , V. Dobrosavljević , M. J. Rozenberg

The effect of an alternating potential on a one-dimensional half-filled Hubbard model with repulsive interaction has been examined by applying the renormalization group method to the bosonized Hamiltonian. The electronic state, which is…

强关联电子 · 物理学 2009-10-31 Masahisa Tsuchiizu , Yoshikazu Suzumura

We investigate spin transport by thermally excited spin waves in an antiferromagnetic insulator. Starting from a stochastic Landau-Lifshitz-Gilbert phenomenology, we obtain the out-of-equilibrium spin-wave properties. In linear response to…

介观与纳米尺度物理 · 物理学 2018-11-05 Scott A. Bender , Hans Skarsvåg , Arne Brataas , Rembert A. Duine

Dispersionless (flat) electronic bands are investigated regarding their conductance properties. Due to "caging" of carriers these bands are usually insulating at partial filling, at least on the non-interacting level. Considering the…

强关联电子 · 物理学 2015-01-14 Wolfgang Häusler

Significant advances in numerical techniques have enabled recent breakthroughs in the study of various properties of the Hubbard model - a seemingly simple, yet complex model of correlated electrons that has been a focus of study for more…

强关联电子 · 物理学 2021-09-14 E. W. Huang , W. O. Wang , J. K. Ding , T. Liu , F. Liu , X. -X. Huang , B. Moritz , T. P. Devereaux

We present ab-initio calculations for the in plane conductivity of Co/Cu multilayer slabs. The electronic structure of the multilayer slabs is calculated by means of density functional theory within a screened KKR scheme. Transport…

材料科学 · 物理学 2009-11-07 P. Zahn , N. Papanikolaou , F. Erler , I. Mertig

At the Mott transition, electron-electron interaction changes a metal, in which electrons are itinerant, to an insulator, in which electrons are localized. This phenomenon is central to quantum materials. Here we contribute to its…

强关联电子 · 物理学 2019-02-20 C. Walsh , P. Sémon , D. Poulin , G. Sordi , A. -M. S. Tremblay

In this work, we have investigated conduction through an artificial molecule comprising two coupled quantum dots. The question addressed is the role of inter-dot coupling on electronic transport. We find that the current through the…

介观与纳米尺度物理 · 物理学 2011-09-22 M. Imran , B. Tariq , M. Tahir , K. Sabeeh

Metals with values of the resistivity and the Hall coefficient much larger than typical ones, e.g., of sodium, are called semimetals. We suggest a model for semimetals which takes into account the strong Coulomb repulsion of the charge…

强关联电子 · 物理学 2009-10-31 Stefan Blawid

A powerful new impurity solver is shown to permit a systematic study of the doping driven Mott transition in a one-band Hubbard model within the framework of single-site dynamical mean field theory. At small dopings and large interaction…

强关联电子 · 物理学 2013-05-29 Philipp Werner , Andrew J. Millis

We study the transfer of spectral weight in the optical spectra of a strongly correlated electron system as a function of temperature and interaction strength. Within a dynamical mean field theory of the Hubbard model that becomes exact in…

凝聚态物理 · 物理学 2009-10-28 M. J. Rozenberg , G. Kotliar , H. Kajueter , G. A. Thomas , D. H. Rapkine , J. M. Honig , P. Metcalf

The effect of on-site electron-electron repulsion $U$ in a band insulator is explored for a bilayer Hubbard Hamiltonian with opposite sign hopping in the two sheets. The ground state phase diagram is determined at half-filling in the plane…

强关联电子 · 物理学 2013-04-09 Axel Euverte , Simone Chiesa , Richard . T. Scalettar , George G. Batrouni

We investigate the electron transport properties of a model magnetic molecule formed by two magnetic centers whose exchange coupling can be altered with a longitudinal electric field. In general we find a negative differential conductance…

介观与纳米尺度物理 · 物理学 2015-05-13 Sujeet K. Shukla , Stefano Sanvito

The multilayer multiconfiguration time-dependent Hartree theory within second quantization representation of the Fock space is applied to study correlated electron transport in models of single-molecule junctions. Extending previous work,…

介观与纳米尺度物理 · 物理学 2015-06-12 Haobin Wang , Michael Thoss

Using an exactly solvable model, we study low-energy properties of a one-dimensional spinless electron fluid contained in a quantum-mechanically moving wire located in a static magnetic field. The phonon and electric current are coupled via…

介观与纳米尺度物理 · 物理学 2009-11-10 Kang-Hun Ahn , Hangmo Yi

The Coulomb repulsion, impeding electrons' motion, has an important impact on the charge dynamics. It mainly causes a reduction of the effective metallic Drude weight (proportional to the so-called optical kinetic energy), encountered in…

强关联电子 · 物理学 2015-05-19 L. Degiorgi

Moir\'e heterostructures consisting of transition metal dichalcogenide (TMD) hetero- and homobilayers have emerged as a promising material platform to study correlated electronic states. Optical signatures of strong correlations in the form…

We study coherent spin transport through helical edge states of topological insulator tunnel-coupled to metallic leads. We demonstrate that unpolarized incoming electron beam acquires finite polarization after transmission through such a…

介观与纳米尺度物理 · 物理学 2021-11-10 R. A. Niyazov , D. N. Aristov , V. Yu. Kachorovskii