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相关论文: Mexican Hat and Rashba Bands in Few-Layer van der …

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The relation between unusual Mexican-hat band dispersion, ferromagnetism and ferroelasticity is investigated using a combination of analytical, first-principles and phenomenological methods. The class of material with Mexican-hat band edge…

材料科学 · 物理学 2016-05-25 L. Seixas , A. S. Rodin , A. Carvalho , A. H. Castro Neto

Mexican-hat dispersion of band electrons in two-dimensional materials attracts a lot of interest, mainly due to the Van Hove singularity of the density of states near the band edge. In this paper, we show that there is one more feature of…

介观与纳米尺度物理 · 物理学 2022-09-29 Vladimir A. Sablikov , Aleksei A. Sukhanov

Increased interest in physics of graphene and other two-dimensional materials boosted investigations of band structure near nodal points and lines. In contrast, group theoretical explanation of simple bands (that do not touch other bands),…

材料科学 · 物理学 2025-03-14 Vladimir Damljanovic

We investigate the effect that the intrinsic spin-orbit and the inter- and intra-layer Rashba interactions have on the energy spectrum of either an unbiased or a biased graphene bilayer. We find that under certain conditions, a Dirac cone…

介观与纳米尺度物理 · 物理学 2010-04-01 Ralph van Gelderen , C. Morais Smith

The singular density of states and the two Fermi wavevectors resulting from a ring-shaped or "Mexican hat" valence band give rise to unique trends in the charged impurity scattering rates and charged impurity limited mobilities. Ring shaped…

介观与纳米尺度物理 · 物理学 2019-02-13 Protik Das , Darshana Wickramaratne , Bishwajit Debnath , Gen Yin , Roger K. Lake

We study the effect of electron-electron interactions in the electronic properties of a biased graphene bilayer. This system is a semiconductor with conduction and valence bands characterized by an unusual ``mexican-hat'' dispersion. We…

介观与纳米尺度物理 · 物理学 2013-05-29 T. Stauber , N. M. R. Peres , F. Guinea , A. H. Castro Neto

We use first-principles calculations to show that van der Waals (vdW) heterostructures consisting of few-layer Bi$_2$Se$_3$ and PtSe$_2$ exhibit electronic and spintronics properties that can be tuned by varying the constituent layers.…

介观与纳米尺度物理 · 物理学 2020-12-15 Shahid Sattar , J. Andreas Larsson

In this work, the structural, electrical, and optical properties of bilayer SiX (X= N, P, As, and Sb) are studied using density functional theory (DFT). Five different stacking orders are considered for every compound and their structural…

材料科学 · 物理学 2021-07-07 Nayereh Ghobadi , Shoeib Babaee Touski

Application of a perpendicular electric field induces a band gap in bilayer graphene, and it also creates a "Mexican hat" structure in the dispersion relation. This structure has unusual implications for the hydrogen-like bound state of an…

介观与纳米尺度物理 · 物理学 2014-01-29 Brian Skinner , B. I. Shklovskii , M. B. Voloshin

Post-transition metal chalcogenides (PTMCs) such as GaSe, GaS, InSe, and InS have been proposed as promising thermoelectric materials due to low lattice conductivity, originating from the atomically layered structure, high Seebeck…

材料科学 · 物理学 2022-09-07 Marcel S Claro

Two-dimensional (2D) materials have recently been the focus of extensive research. By following a similar trend as graphene, other 2D materials including transition metal dichalcogenides (MX2) and metal mono-chalcogenides (MX) show great…

In this paper, spintronic properties of the mono-layer GaTe under biaxial and uniaxial strain is investigated. Here, spin properties of two structures of GaTe, one with mirror symmetry and the other with inversion symmetry, is studied. We…

材料科学 · 物理学 2019-05-09 Mohammad Ariapour , Shoeib Babaee Touski

Stacking two-dimensional (2D) van der Waals materials with different interlayer atomic registry in a heterobilayer causes the formation of a long-range periodic superlattice that may bestow the heterostructure with exotic properties such as…

We present the ballistic quantum transport of a p-n-p bilayer silicene junction in the presence of spin-orbit coupling and electric field using a four-band model in combination with the transfer-matrix approach. A Mexican-hat shape of the…

介观与纳米尺度物理 · 物理学 2019-04-17 Le Bin Ho , Lan Nguyen Tran

In this paper, spin properties of monolayer MX (M=Ga, In and X=S, Se, Te) in the presence of strain are studied. Density functional theory is used to investigate spin properties. The strain changes modification of bandgap due to spin-orbit…

材料科学 · 物理学 2020-05-20 Mohammad Ariapour , Shoeib Babaee Touski

We study quasi-bound states of two electrons that arise in two-dimensional materials with a Mexican-hat dispersion (MHD) at an energy above its central maximum. The width of the resonance of the local density of states created by pairs is…

强关联电子 · 物理学 2023-07-25 Vladimir A. Sablikov , Aleksei A. Sukhanov

Minimally twisted bilayer graphene in the presence of an interlayer bias develops a triangular network of valley chiral modes that propagate along the $AB/BA$ interfaces and scatter at the $AA$ regions. The low energy physics of the…

介观与纳米尺度物理 · 物理学 2023-12-07 P. Wittig , F. Dominguez , C. De Beule , P. Recher

We investigate the role of van-Hove singularities (VHS) in a system's electronic band structure on the formation and properties of excitons and trions. We consider (i) the different parameters of a Mexican-hat-type dispersion of the valence…

介观与纳米尺度物理 · 物理学 2025-11-21 Lewis J. Burke , Mark T. Greenaway , Joseph J. Betouras

We present a theoretical study of the bandstructure and Landau levels in bilayer graphene at low energies in the presence of a transverse magnetic field and Rashba spin-orbit interaction in the regime of negligible trigonal distortion.…

介观与纳米尺度物理 · 物理学 2012-09-18 Francisco Mireles , John Schliemann

We show that superconductivity can arise in semiconductors with a band in the shape of a Mexican hat when the chemical potential is tuned close to the band edge, but not intersecting the band, as long as interactions are sufficiently…

超导电性 · 物理学 2016-05-11 Garry Goldstein , Camille Aron , Claudio Chamon
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