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Three-dimensional (3D) topological insulators (TI) are novel quantum materials with insulating bulk and topologically protected metallic surfaces with Dirac-like band structure. The spin-helical Dirac surface states are expected to host…

Topological insulators are transformative quantum solids with immune-to-disorder metallic surface states having Dirac band structure. Ubiquitous charged bulk defects, however, pull the Fermi energy into the bulk bands, denying access to…

Topological insulators (TIs) are predicted to be composed of an insulating bulk state along with conducting channels on the boundary of the material. In Bi2Se3, however, the Fermi level naturally resides in the conduction band due to…

材料科学 · 物理学 2011-08-03 Matthew Brahlek , Yong Seung Kim , Namrata Bansal , Eliav Edrey , Seongshik Oh

The topological properties of the bulk band structure of a three-dimensional topological insulator (TI) manifest themselves in the form of metallic surface states. In this paper, we propose a probe which directly couples to an exotic…

介观与纳米尺度物理 · 物理学 2015-05-19 Sthitadhi Roy , Kush Saha , Sourin Das

By using angle-resolved photoemission spectroscopy combined with first-principles calculations, we reveal that the topmost unit cell of ZrSnTe crystal hosts two-dimensional (2D) electronic bands of topological insulator (TI) state, though…

The two-dimensional (2D) surface state of the three-dimensional strong topological insulator (STI) is fundamentally distinct from other 2D electron systems in that the Fermi arc encircles an odd number of Dirac points. The TI surface is in…

介观与纳米尺度物理 · 物理学 2013-06-28 Dohun Kim , Paul Syers , Nicholas P. Butch , Johnpierre Paglione , Michael S. Fuhrer

2D topological insulators promise novel approaches towards electronic, spintronic, and quantum device applications. This is owing to unique features of their electronic band structure, in which bulk-boundary correspondences enforces the…

In ideal topological insulator (TI) films the bulk state, which is supposed to be insulating, should not provide any electric coupling between the two metallic surfaces. However, transport studies on existing TI films show that the…

材料科学 · 物理学 2014-10-21 Matthew Brahlek , Nikesh Koirala , Maryam Salehi , Namrata Bansal , Seongshik Oh

Topological insulators (TIs) are a class of materials characterized by an insulting bulk and high mobility topologically protected surface states, making them promising candidates for future optoelectronic and quantum devices. Although…

Pure Topological Insulating materials preserve a unique electronic state comprising of bulk insulating gap and conducting surface states. Here we use bulk Bi2Se3 single crystals possessing Se vacancy defects as a prototype topological…

材料科学 · 物理学 2019-08-13 Amit Jash , Kamalika Nath , T. R. Devidas , A. Bharathi , S. S. Banerjee

We have performed angle-resolved photoemission spectroscopy on (PbSe)5(Bi2Se3)3m, which forms a natural multilayer heterostructure consisting of a topological insulator (TI) and an ordinary insulator. For m = 2, we observed a gapped…

介观与纳米尺度物理 · 物理学 2015-06-05 K. Nakayama , K. Eto , Y. Tanaka , T. Sato , S. Souma , T. Takahashi , Kouji Segawa , Yoichi Ando

The surface states of a 3D topological insulator (TI) exhibit topological protection against backscattering. However, the contribution of bulk electrons to the transport data is an impediment to the topological protection of surface. We…

强关联电子 · 物理学 2016-12-02 R. K. Gopal , Sourabh Singh , Arpita Mandal , Jit Sarkar , Chiranjib Mitra

In an ideal bulk topological-insulator (TI) conducting surface states protected by time reversal symmetry enfold an insulating crystal. However, the archetypical TI, Bi2Se3, is actually never insulating; it is in fact a relatively good…

介观与纳米尺度物理 · 物理学 2014-03-07 E. Lahoud , E. Maniv , M. Petrushevsky , M. Naamneh , A. Ribak , S. Wiedmann , L. Petaccia , K. B. Chashka , Y. Dagan , A. Kanigel

High quality thin films of the topological insulator (Bi$_{0.4}$Sb$_{0.6}$)$_2$Te$_3$ have been deposited on SrTiO$_3$ (111) by molecular beam epitaxy. Their electronic structure was investigated by in situ angle-resolved photoemission…

Three-dimensional (3-D) topological insulators (TI) are characterized by the presence of metallic surface states and a bulk band gap. Recently theoretical and experimental studies have shown an induced gap in the surface state bands of TI…

介观与纳米尺度物理 · 物理学 2012-12-21 Jiwon Chang , Leonard F. Register , Sanjay K. Banerjee

In this Letter we present scanning tunneling microscopy density-of-states measurements and electronic structure calculations of the topological insulator Bi2Se3. The measurements show significant background states in addition to the…

Surface states of topological insulators (TIs) have been playing the central role in the majority of outstanding investigations in low-dimensional electron systems for more than 10 years. TIs based on high-quality strained HgTe films…

介观与纳米尺度物理 · 物理学 2019-05-15 M. L. Savchenko , D. A. Kozlov , N. N. Vasilev , Z. D. Kvon , N. N. Mikhailov , S. A. Dvoretsky , A. V. Kolesnikov

An important challenge in the field of topological materials is to carefully disentangle the electronic transport contribution of the topological surface states from that of the bulk. For Bi$_2$Te$_3$ topological insulator samples, bulk…

材料科学 · 物理学 2018-05-02 Prosper Ngabonziza , Yi Wang , Alexander Brinkman

Three dimensional topological insulator crystals consist of an insulating bulk enclosed by metallic surfaces, and detailed theoretical predictions about the surface state band topology and spin texture are available. While several…

Bi$_{2}$Te$_{3}$ and Bi$_{2}$Se$_{3}$ are well known 3D-topological insulators. Films made of these materials exhibit metal-like surface states with a Dirac dispersion and possess high mobility. The high mobility metal-like surface states…

介观与纳米尺度物理 · 物理学 2015-06-22 Parijat Sengupta , Tillmann Kubis , Yaohua Tan , Gerhard Klimeck
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