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We prove that invisible bands associated with zeros of the single-particle Green's function exist ubiquitously at topological interfaces of 2D Chern insulators, dual to the chiral edge/domain-wall modes. We verify this statement in a…

强关联电子 · 物理学 2023-09-19 Youjiang Xu , Irakli Titvinidze , Walter Hofstetter

We demonstrate the existence of topologically nontrivial phase in a one-dimensional fermionic lattice system subjected to synthetic gauge fields, which is beyond the standard Altland-Zirnbauer classification of topological insulators. The…

强关联电子 · 物理学 2015-03-18 Linhu Li , Shu Chen

We show that the twisted graphene bilayer can reveal unusual topological properties at low energies, as a consequence of a Dirac-point splitting. These features rely on a symmetry analysis of the electron hopping between the two layers of…

介观与纳米尺度物理 · 物理学 2011-07-21 R. de Gail , M. O. Goerbig , F. Guinea , G. Montambaux , A. H. Castro Neto

We explore a new class of topologically stable zero energy modes which are protected by coexisting chiral and spatial symmetries. If a chiral symmetric Hamiltonian has an additional spatial symmetry such as reflection, inversion and…

介观与纳米尺度物理 · 物理学 2015-06-19 Mikito Koshino , Takahiro Morimoto , Masatoshi Sato

We investigate the topological phase transitions in graphene under the modulation of circularly polarized light, by analyzing the changes of edge states and its topological structures. A full phase diagram, with up to ten different…

介观与纳米尺度物理 · 物理学 2016-04-20 Yi-Xiang Wang , Fuxiang Li

The electronic structures of graphene systems and topological insulators have closely-related features, such as quantized Berry phase and zero-energy edge states. The reason for these analogies is that in both systems there are two relevant…

介观与纳米尺度物理 · 物理学 2012-08-21 Jian Li , Ivar Martin , Markus Buttiker , Alberto F. Morpurgo

Recent experiments [L. Ju et al., Nature, 2015, 520, 650] confirm the existence of gapless states at domain walls created in gated bilayer graphene, when the sublattice stacking is changed from AB to BA. These states are significant because…

介观与纳米尺度物理 · 物理学 2016-03-15 Wlodzimierz Jaskolski , Marta Pelc , Leonor Chico , Andres Ayuela

Noncentrosymmetric superconductors can support flat bands of zero-energy surface states in part of their surface Brillouin zone. This requires that they obey time-reversal symmetry and have a sufficiently strong triplet-to-singlet-pairing…

超导电性 · 物理学 2024-04-03 Clara J. Lapp , Julia M. Link , Carsten Timm

We study a many-body ground state of graphene in perpendicular magnetic fields. Chiral symmetry in graphene enables us to determine the many-body ground state, which turns out to be a doubly degenerate chiral condensate for the half-filled…

介观与纳米尺度物理 · 物理学 2015-05-30 Y. Hamamoto , Y. Hatsugai , H. Aoki

Epitaxial bismuthene on SiC(0001) hosts symmetry-protected metallic edge states within a large bulk band gap, establishing it as a promising two-dimensional topological insulator for hightemperature quantum spin Hall (QSH) transport. Here…

The search for new realization of topologically protected edge states is an active area of research. We show that a tilt boundary in gated multi-layer graphene supports topologically protected gapless kink states, associated with quantum…

介观与纳米尺度物理 · 物理学 2013-06-27 Abolhassan Vaezi , Yufeng Liang , Darryl H. Ngai , Li Yang , Eun-Ah Kim

Topological materials can host edge and corner states that are protected from disorder and material imperfections. In particular, the topological edge states of mechanical structures present unmatched opportunities for achieving robust…

材料科学 · 物理学 2023-04-12 Marcelo Guzman , Xiaofei Guo , Corentin Coulais , David Carpentier , Denis Bartolo

We investigate the electronic and transport properties of gated bilayer graphene with one corrugated layer, which results in a stacking AB/BA boundary. When a gate voltage is applied to one layer, topologically protected gap states appear…

材料科学 · 物理学 2015-09-30 M. Pelc , W. Jaskólski , A. Ayuela , L. Chico

Topologically protected edge states have been extensively studied in systems characterized by the topological invariants in band gaps (also called line gaps). In this study, we unveil a whole new form of edge states that transcends the…

介观与纳米尺度物理 · 物理学 2025-03-06 Hongwei Jia , Jing Hu , Ruo-Yang Zhang , Yixin Xiao , Dongyang Wang , Mudi Wang , Shaojie Ma , Xiaoping Ouyang , Yifei Zhu , C. T. Chan

Topological materials rely on engineering global properties of their bulk energy bands called topological invariants. These invariants, usually defined over the entire Brillouin zone, are related to the existence of protected edge states.…

介观与纳米尺度物理 · 物理学 2021-03-31 P. St-Jean , A. Dauphin , P. Massignan , B. Real , O. Jamadi , M. Milićević , A. Lemaître , A. Harouri , L. Le Gratiet , I. Sagnes , S. Ravets , J. Bloch , A. Amo

Surface impedance is an important concept in classical wave systems such as photonic crystals (PCs). For example, the condition of an interface state formation in the interfacial region of two different one-dimensional PCs is simply Z_SL…

介观与纳米尺度物理 · 物理学 2014-04-29 Meng Xiao , Z. Q. Zhang , C. T. Chan

The quantum Hall (QH) effect, a topologically non-trivial quantum phase, expanded and brought into focus the concept of topological order in physics. The topologically protected quantum Hall edge states are of crucial importance to the QH…

We study one-dimensional insulators obeying a chiral symmetry in the single-particle picture. The Fermi level is assumed to lie in a mobility gap. Topological indices are defined for infinite (bulk) or half-infinite (edge) systems, and it…

数学物理 · 物理学 2018-09-26 Gian Michele Graf , Jacob Shapiro

We study the topological phase transitions induced in spin-orbit coupled materials with buckling like silicene, germanene, stanene, etc, by circularly polarised light, beyond the high frequency regime, and unearth many new topological…

介观与纳米尺度物理 · 物理学 2020-09-24 Ruchi Saxena , Sumathi Rao , Arijit Kundu

Bilayer graphene -- two coupled single graphene layers stacked as in graphite -- provides the only known semiconductor with a gap that can be tuned externally through electric field effect. Here we use a tight binding approach to study how…

介观与纳米尺度物理 · 物理学 2010-04-29 Eduardo V. Castro , N. M. R. Peres , J. M. B. Lopes dos Santos , F. Guinea , A. H. Castro Neto