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相关论文: Vacuum Thermal Switch Made of Phase Transition Mat…

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In this work, a thermal switch is proposed based on the phase-change material vanadium dioxide (VO2) within the framework of near-field radiative heat transfer (NFRHT). The radiative thermal switch consists of two metamaterials filled with…

应用物理 · 物理学 2023-09-21 Ming-Jian He , Xue Guo , Hong Qi , Lu Lu , He-Ping Tan

Vanadium dioxide (VO2) as a phase-change material controls the transferred heat during phase transition process between metal and insulator states. At temperature above 68C, the rutile structure VO2 keeps the heat out and increases the IR…

应用物理 · 物理学 2022-01-19 Golsa Mirbagheri , David T. Crouse , Chee-Keong Tan

We present an experimental demonstration of passive, dynamic thermal regulation in a solid-state system with temperature-dependent thermal emissivity switching. We achieve this effect using a multilayered device, comprised of a vanadium…

In this paper we used Raman spectroscopy to investigate the optical properties of vanadium dioxide (VO2) thin films during the thermally induced insulating to metallic phase transition. We observed a significant difference in transition…

材料科学 · 物理学 2013-01-14 E. Radue , E. Crisman , L. Wang , S. Kittiwatanakul , J. Lu , S. A. Wolf , R. Wincheski , R. A. Lukaszew , I. Novikova

Vanadium dioxide is a complex oxide material, which shows large resistivity and optical reflectance change while transitioning from the insulator to metal phase at ~68 {\deg}C. In this work, we use a modified atmospheric thermal oxidation…

应用物理 · 物理学 2021-05-24 P Ashok , Yogesh Singh Chauhan , Amit Verma

Vanadium dioxide with metal-to-insulator transition (MIT) that is triggered by heat, current or light is a promising material for modern active THz/mid-IR metasurfaces and all-optical big data processing systems. Multilayer VO2-based active…

Vanadium dioxide (VO2) has drawn significant attention for its near room temperature insulator to metal transition and associated structural phase transition. The underlying Physics behind the temperature induced insulator to metal and…

材料科学 · 物理学 2023-04-19 S. R. Sahu , S. S. Majid , A. Ahad , A. Tripathy , K. Dey , S. Pal , B. K. De , Wen-Pin Hsieh , R. Rawat , V. G. Sathe , D. K. Shukla

We use apertureless scattering near-field optical microscopy (SNOM) to investigate the nanoscale optical response of vanadium dioxide (VO2) thin films through a temperature-induced insulator-to-metal transition (IMT). We compare images of…

介观与纳米尺度物理 · 物理学 2018-10-24 H. T. Stinson , A. Sternbach , O. Najera , R. Jing , A. S. Mcleod , T. V. Slusar , A. Mueller , L. Anderegg , H. T. Kim , M. Rozenberg , D. N. Basov

Amorphous vanadium dioxide (VO$_{2}$) films deposited by atomic layer deposition (ALD) were crystallized with an ex situ anneal at 660-670 ${\deg}$C for 1-2 hours under a low oxygen pressure (10$^{-4}$ to 10$^{-5}$ Torr). Under these…

Pristine vanadium dioxide (VO2), an insulator-to-metal transition (IMT) material, is grown via furnace oxidation followed by rapid thermal annealing with forming gas (5%H2/95%N2) which reduces surface over-oxides such as V2O5 formed during…

材料科学 · 物理学 2025-12-25 Ken Araki , Vishwa Krishna Rajan , Liping Wang

Vanadium dioxide (VO2) exhibits an insulator-to-metal transition accompanied by a structural transition near room temperature. This transition can be triggered by an ultrafast laser pulse. Exotic transient states, such as a metallic state…

Insulator-to-metal (MI) phase transition in vanadium dioxide (VO2) thin films with controlled lattice distortion was investigated by thermopower measurements. VO2 epitaxial films with different crystallographic orientations, grown on (0001)…

强关联电子 · 物理学 2015-07-15 Takayoshi Katase , Kenji Endo , Hiromichi Ohta

The thermal radiative near field transport between vanadium dioxide and silicon oxide at submicron distances is expected to exhibit a strong dependence on the state of vanadium dioxide which undergoes a metal-insulator transition near room…

In this letter we report and investigate the temperature dependency of various radio frequency parameters (RF) for a fabricated reconfigurable bandstop filter with vanadium dioxide (VO2) switches measured up to 55 GHz. Here the insulator to…

应用物理 · 物理学 2020-10-27 Andrei A. Muller , Matteo Cavalieri , Adrian M. Ionescu

Vanadium Dioxide (VO2) is a strongly correlated material, which exhibits insulator to metal transition at ~68 C along with large resistivity and infrared optical reflectance modulation. In this work, we use atmospheric pressure thermal…

应用物理 · 物理学 2021-06-29 Ashok P , Yogesh Singh Chauhan , Amit Verma

This article proposes a method to improve the switching rate of RF switches based on thermally induced phase change materials.Based on the principle that during the heating process, the increase in heat provided by the heating element plays…

材料科学 · 物理学 2024-11-07 Tiantian Guo

Thin films of VO$_2$ on different substrates, Al$_2$O$_3$ and SiO$_2$/Si, have been prepared and characterized from room temperature up to 360 K. From the band structure in the rutile metallic phase and in the monoclinic insulating phase…

强关联电子 · 物理学 2016-09-21 Tobias Peterseim , Martin Dressel , Marc Dietrich , Angelika Polity

RF radiation spectrum is central to wireless and radar systems among numerous high-frequency device technologies. Here, we demonstrate sensing of RF signals in the technologically relevant 2.4 GHz range utilizing vanadium dioxide (VO2), a…

We report on local probe measurements of current-voltage and electrostatic force-voltage characteristics of electric-field-induced insulator to metal transition in VO2 thin film. In conducting AFM mode, switching from the insulating to…

强关联电子 · 物理学 2012-01-09 B. Wu , A. Zimmers , H. Aubin , R. Ghosh , Y. Liu , R. Lopez

Vanadium dioxide is currently considered as one of the most promising metarials for oxide elcteronics. Both planar and sandwich thin-film MOM devices based on VO2 exhibit electrical switching with an S-shaped I-V characteristic, and this…

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