相关论文: Efficient Control of the Rashba Effective Magnetic…

We report on transport characteristics of field effect two-dimensional electron gases (2DEG) in surface indium antimonide quantum wells. The topmost 5 nm of the 30 nm wide quantum well is doped and shown to promote the formation of…

We demonstrate that the size of the electric-field-induced Rashba spin splitting in an 80 nm wide modulation-doped InGaSb quantum well can depend strongly on the spatial variation of the electric field. In a slightly asymmetric quantum well…

We analyze the proper inclusion of electric-field-induced spin splittings in the framework of the envelope function approximation. We argue that the Rashba effect should be included in the form of a macroscopic potential as diagonal terms…

We review magneto-optical and magneto-transport effects in GaAs/GaAlAs heterostructures doped in GaAlAs barriers with donors, providing two-dimensional electron gas in GaAs quantum wells, and additionally doped with smaller amounts of…

In materials lacking inversion symmetry, the spin-orbit coupling enables the direct connection between the electron's spin and its linear momentum, a phenomenon called inverse spin galvanic effect. In magnetic materials, this effect…

Spin-orbit interaction (SOI) in low-dimensional systems results in the fascinating property of spin-momentum locking. In a Rashba system the inversion symmetry normal to the plane of a two-dimensional (2D) electron gas is broken, generating…

The control of the magnetism of ultra-thin ferromagnetic layers using an electric field rather than a current, if large enough, would lead to many technologically important applications. To date, while it is usually assumed the changes in…

We investigate theoretically the efficiency of the Rashba effect, i.e. the spin splitting resulting from an electric field. This is the mechanism behind the Datta-Das spin transistor. In the research efforts so far the carriers have usually…

We predict two spin-dependent transport phenomena in two-dimensional electron systems, which are induced by spatially fluctuating Rashba spin-orbit interaction. When the electron gas is magnetized, the random Rashba interaction leads to the…

Theory of weak localization is developed for electrons in semiconductor quantum wells grown along [110] and [111] crystallographic axes. Anomalous conductivity correction caused by weak localization is calculated for symmetrically doped…

In the absence of an external field, the Rashba spin-orbit interaction (SOI) in a two-dimensional electron gas in a semiconductor quantum well arises entirely from the screened electrostatic potential of ionized donors. We adjust the wave…

Low-temperature in-plane magnetotransport measurements have been performed on adsorbate-induced electron systems formed at in-situ cleaved surfaces of p-type InAs. The Ag-coverage dependence of the surface electron density strongly supports…

We investigate the spin-polarized transport properties of a two-dimensional electron gas in a n-type diluted magnetic narrow gap semiconductor quantum well subjected to a perpendicular magnetic and electric field. Interesting beating…

We theoretically show that a locally-embedded Rashba interaction acts as a strong pinning center for current-driven domain walls and demonstrate efficient capturing and depinning of the wall using a weak Rashba interaction of the order of…

The optical response of a heavily doped quantum well, with two occupied subbands, has been investigated as a function of the electronic density. It is shown that the two optically active transitions are mutually coupled by dipole-dipole…

Current-induced magnetic domain wall motion, induced by transfer of spin transfer effect due to exchange interaction, is expected to be useful for next generation high-density storages. We here show that efficient domain wall manipulation…

We consider the effect of the Rashba spin-orbital interaction and space charge in a ferromagnet-insulator/semiconductor/insulator-ferromagnet junction where the spin current is severely affected by the doping, band structure and charge…

The spin-sensitive charge oscillation, controlled by an external magnetic field, was recently proposed as a mechanism of transformations of qubits, defined as two-electron spin-charge Wannier molecules in a square quantum dot. The paper…

We demonstrate how the term describing interaction between a single two-level atom and two cavity field modes may attain a Rashba form. As an outcome, cavity QED provides a testbed for studies of phenomena reminiscent of the spin-orbit…

We predict that a novel bias-voltage assisted magnetization reversal process will occur in Mn doped II-VI semiconductor quantum wells or heterojunctions with carrier induced ferromagnetism. The effect is due to strong exchange-coupling…