Interplay between s-d exchange interaction and Rashba effect: spin-polarized transport
Mesoscale and Nanoscale Physics
2007-05-23 v1
Abstract
We investigate the spin-polarized transport properties of a two-dimensional electron gas in a n-type diluted magnetic narrow gap semiconductor quantum well subjected to a perpendicular magnetic and electric field. Interesting beating patterns in the magneto resistance are found which can be tuned significantly by varying the electric field. A resonant enhancement of spin-polarized current is found which is induced by the competition between the s-d exchange interaction and the Rashba effect [Y. A. Bychkov and E. I. Rashba, J. Phys. C 17, 6039 (1984)].
Cite
@article{arxiv.cond-mat/0609532,
title = {Interplay between s-d exchange interaction and Rashba effect: spin-polarized transport},
author = {W. Yang and Kai Chang and X. G. Wu and H. Z. Zheng and F. M. Peeters},
journal= {arXiv preprint arXiv:cond-mat/0609532},
year = {2007}
}
Comments
4 pages, 3 figures, Appl. Phys. Lett. (in press)