Nonlinear anomalous Hall effect and negative magnetoresistance in a system with random Rashba field
Mesoscale and Nanoscale Physics
2012-11-26 v1
Abstract
We predict two spin-dependent transport phenomena in two-dimensional electron systems, which are induced by spatially fluctuating Rashba spin-orbit interaction. When the electron gas is magnetized, the random Rashba interaction leads to the anomalous Hall effect. An example of such a system is a narrow-gap magnetic semiconductor-based symmetric quantum well. We show that the anomalous Hall conductivity reveals a strongly nonlinear dependence on the magnetization, decreasing exponentially at large spin density. We also show that electron scattering from a fluctuating Rashba field in a two-dimensional nonmagnetic electron system leads to a negative magnetoresistance arising solely due to spin-dependent effects.
Keywords
Cite
@article{arxiv.1211.5304,
title = {Nonlinear anomalous Hall effect and negative magnetoresistance in a system with random Rashba field},
author = {V. K. Dugaev and M. Inglot and E. Ya. Sherman and J. Berakdar and J. Barnas},
journal= {arXiv preprint arXiv:1211.5304},
year = {2012}
}
Comments
5 pages, 3 figures