相关论文: Memory effect in ferroelectric single electron tra…

Tri-gate ferroelectric FETs with Hf0.5Zr0.5O2 gate insulator for memory and neuromorphic applications are fabricated and characterized for multi-level operation. The conductance and threshold voltage exhibit highly linear and symmetric…

We present a theory for the memory effect in electron glasses. In fast gate voltage sweeps it is manifested as a dip in the conductivity around the equilibration gate voltage. We show that this feature, also known as anomalous field effect,…

Considerable evidence exists for the failure of the traditional theory of quantum critical points (QCPs), pointing to the need to incorporate novel excitations. The destruction of Kondo entanglement and the concomitant critical Kondo effect…

The design of the interfacial bondings at metal-oxide interfaces yields exciting new phenomena and can be a route to sustain, and even promote, ferroelectricity at the nanoscale. We study the impact of these interfaces on the nature of the…

The quantum conductance of the single-electron tunneling (SET) transistor is investigated in this paper by the functional integral approach. The formalism is valid for arbitrary tunnel resistance of the junctions forming the SET transistor…

Review is devoted to the recent theoretical studies of the impact of domain structure of ferroelectric substrate on graphene conductance. An analytical description of the hysteresis memory effect in a field effect transistor based on…

We theoretically study the tunnel magnetoresistance(TMR) of ferromagnet / superconductor / ferromagnet single-electron tunneling transistors with a special attention to the parity effect. It is shown that in the plateau region, there is no…

Ferroelectrics offer a promising materials platform to realize energy-efficient non-volatile memory technology with the FeFET-based implementations being one of the most area-efficient ferroelectric memory architectures. However, the FeFET…

With the broad recent research on ferroelectric hafnium oxide for non-volatile memory technology, depolarization effects in HfO2-based ferroelectric devices gained a lot of interest. Understanding the physical mechanisms regulating the…

Interplay of cotunneling and single-electron tunneling in a thermally isolated single-electron transistor (SET) leads to peculiar overheating effects. In particular, there is an interesting crossover interval where the competition between…

Ferroelectric devices use their electric polarization ferroic order as the switching and storage physical quantity for memory applications. However, additional built-in physical quantities and memory paradigms are requested for…

A dual mode device behaving either as a field-effect transistor or a single electron transistor (SET) has been fabricated using silicon-on-insulator metal oxide semiconductor technology. Depending on the back gate polarisation, an electron…

Stable and switchable polarization of ferroelectric materials opens a possibility to electrically control their functional behavior. A particularly promising approach is to employ ferroelectric tunnel junctions where the polarization…

In tunnel junctions with ferroelectric barriers, switching the polarization direction modifies the electrostatic potential profile and the associated average tunnel barrier height. This results in strong changes of the tunnel transmission…

I present a review of both experimental and theoretical studies performed during the recent three years, which deal with the physical properties and possible applications of graphene placed on ferroelectric (organic or Pb(ZrxTi1-x)O3 (PZT)…

Electron tunneling in ferromagnetic single-electron transistors is considered theoretically in the sequential tunneling regime. A new formalism is developed, which operates in a two-dimensional space of states, instead of one-dimensiona…

We present the concept of ferroelectric tunnel junctions (FTJs). These junctions consist of two metal electrodes separated by a nanometer-thick ferroelectric barrier. The current-voltage characteristics of FTJs are analyzed under the…

Recent experiments on layered {\alpha}-In2Se3 have confirmed its room-temperature ferroelectricity under ambient condition. This observation renders {\alpha}-In2Se3 an excellent platform for developing two-dimensional (2D) layered-material…

Spin-based memories are attractive for their non-volatility and high durability but provide modest resistance changes, whereas semiconductor logic transistors are capable of large resistance changes, but lack memory function with high…

We report a numerical renormalization-group study of the thermoelectric effect in the single-electron transistor (SET) and side-coupled geometries. As expected, the computed thermal conductance and thermopower curves show signatures of the…