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相关论文: Mott transition in granular aluminum

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The physics of the Mott metal-insulator transition (MIT) has attracted huge interest in the last decades. However, despite broad efforts, some key theoretical predictions are still lacking experimental confirmation. In particular, it is not…

We explore the magnetically-ordered ground state of the isovalently-substituted Mott-insulator Y$_{1-x}$La$_{x}$TiO$_{3}$ for $x$ $\leq$ 0.3 via single crystal growth, magnetometry, neutron diffraction, x-ray magnetic circular dichroism…

Two-dimensional Mott insulators host antiferromagnetic (AFM) correlations that are predicted to enhance the attractive interaction between empty (holons) and doubly occupied (doublons) sites, creating a novel pathway for exciton formation.…

强关联电子 · 物理学 2025-05-12 Omar Mehio , Yuchen Han , Xinwei Li , Honglie Ning , Zach Porter , Stephen D. Wilson , David Hsieh

Dynamics of magnetic moments near the Mott metal-insulator transition is investigated by a combined slave-rotor and Dynamical Mean-Field Theory solution of the Hubbard model with additional fully-frustrated random Heisenberg couplings. In…

强关联电子 · 物理学 2013-07-15 Serge Florens , Priyanka Mohan , C. Janani , T. Gupta , R. Narayanan

Electrons undergoing a Mott transition may shed their charge but persist as neutral excitations of a quantum spin liquid (QSL). We introduce concrete two-dimensional models exhibiting this exotic behavior as they transition from…

强关联电子 · 物理学 2022-05-31 Eyal Leviatan , David F. Mross

Metal-insulator transitions are studied within a three-component Falicov-Kimball model which mimics a mixture of one-component and two-component fermionic particles with local repulsive interactions in optical lattices. Within the model the…

强关联电子 · 物理学 2013-08-29 Duong-Bo Nguyen , Minh-Tien Tran

Although most metal-insulator transitions in doped insulators are generally viewed as Mott transitions, some systems seem to deviate from this scenario. Alkali metal-ammonia solutions are a brilliant example of that. They reveal a phase…

强关联电子 · 物理学 2009-11-13 Gennady N. Chuev , Pascal Quemerais

Gapless spin liquids have recently been observed in several frustrated Mott insulators, with elementary spin excitations - "spinons" - reminiscent of degenerate Fermi systems. However, their precise role at the Mott point, where charge…

强关联电子 · 物理学 2016-09-22 Tsung-Han Lee , Serge Florens , Vladimir Dobrosavljevic

Sustaining exotic quantum mechanical phases at high temperatures is a long-standing goal of condensed matter physics. Among them, half-metals are spin-polarized conductors that are essential for realizing room-temperature spin current…

强关联电子 · 物理学 2022-03-22 Gour Jana , Abhishek Joshi , Subhajyoti Pal , Anamitra Mukherjee

Colossal magnetoresistance (CMR) refers to a large change in electrical conductivity induced by a magnetic field in the vicinity of a metal-insulator transition and has inspired extensive studies for decades\cite{Ramirez1997, Tokura2006}.…

材料科学 · 物理学 2018-08-01 Zhiyong Qiu , Dazhi Hou , Joseph Barker , Kei Yamamoto , Olena Gomonay , Eiji Saitoh

Here we propose and analyze the behavior of a FET--like switching device, the Mott transition field effect transistor, operating on a novel principle, the Mott metal--insulator transition. The device has FET-like characteristics with a low…

凝聚态物理 · 物理学 2009-10-28 C. Zhou , D. M. Newns , J. A. Misewich , P. C. Pattnaik

We use determinant Quantum Monte Carlo simulations and exact diagonalization to explore insulating behavior in the Hubbard model with a bimodal distribution of randomly positioned local site energies. From the temperature dependence of the…

强关联电子 · 物理学 2007-07-10 N. Paris , A. Baldwin , R. T. Scalettar

With a reduction in the average grain size in nanostructured films of elemental Nb, we observe a systematic crossover from metallic to weakly-insulating behavior. An analysis of the temperature dependence of the resistivity in the…

介观与纳米尺度物理 · 物理学 2007-05-23 Sangita Bose , Rajarshi Banerjee , Arda Genc , Pratap Raychaudhuri , Hamish L. Fraser , Pushan Ayyub

Using several independent methods, we find that the metal-insulator transition occurs in the strongly-interacting two-valley two-dimensional electron system in ultra-high mobility SiGe/Si/SiGe quantum wells in zero magnetic field. The…

强关联电子 · 物理学 2022-12-13 A. A. Shashkin , S. V. Kravchenko

The Mott transition is a paradigmatic phenomenon where Coulomb interactions between electrons drive a metal-insulator phase transition. It is extensively studied within the Hubbard model, where a quantum critical transition occurs at a…

强关联电子 · 物理学 2025-10-20 Ankur Majumder , Sudeshna Sen

We present the first-ever multi-scale dynamical simulation of the temperature-controlled Mott metal-insulator transition in the Hubbard model. By integrating advanced electronic structure method and an efficient Gutzwiller/slave-boson…

强关联电子 · 物理学 2021-02-19 Gia-Wei Chern

We present the carrier transport properties in the vicinity of a doping-driven Mott transition observed at a field-effect transistor (FET) channel using a single crystal of the typical two-dimensional organic Mott insulator…

强关联电子 · 物理学 2017-01-13 Yoshiaki Sato , Yoshitaka Kawasugi , Masayuki Suda , Hiroshi M. Yamamoto , Reizo Kato

We analize electrical conductivity controlled by hopping of bound spin polarons in disordered solids with wide distributions of electron energies and polaron shifts (barriers). By means of percolation theory and Monte Carlo simulations we…

材料科学 · 物理学 2009-11-07 M. Foygel , R. D. Morris , A. G. Petukhov

We provide experimental and theoretical evidence for a novel type of pressure-induced insulator-metal transition characterized by site-selective delocalization of the electrons. M\"ossbauer spectroscopy, X-ray diffraction and electrical…

The Hubbard model at temperatures above the N\'{e}el transition, despite being a paramagnet, can exhibit rich physics due to the interplay of Fermi surface, on-site interaction $U$ and thermal fluctuations. Nevertheless, the understanding…

强关联电子 · 物理学 2025-01-23 Yu-Feng Song , Youjin Deng , Yuan-Yao He