相关论文: Unidirectional magnetoelectric-field multiresonant…
Tunnelling conductances observed for mesoscopic Kondo systems exhibit a zero-bias peak and two coherent side peaks. The former peak is usually understood as a Kondo effect and the latter side peak is recently clarified as the effect of…
We have observed that the tunneling magnetoconductance between two-dimensional (2D) electron gases formed at nominally identical InAs-AlSb interfaces most often exhibits two sets of Shubnikov-de Haas oscillations with almost the same…
We created epitaxial magnetic tunnel junctions of FeCo/MgO/EuS on MgO buffered Si (100). Tunnel magnetoresistance reached up to 64% at 4.2 K. An unexpected fast drop of magnetoresistance was recorded for MgO thickness above 1 nm, which is…
A theoretical investigation has been made of the magnetoplasmon excitations in a quantum wire characterized by a confining harmonic potential and subjected to a perpendicular magnetic field. We study the (nonlocal, dynamic) inverse…
We predict the tetragonal Mn2PC monolayer to be a room-temperature ferromagnetic half-metal with a Curie temperature of 554 K. The spin-up channel hosts type-II Weyl-like crossings at the Fermi level with highly anisotropic band dispersion,…
The bias dependence of the tunnel magnetoresistance (TMR) of Fe/MgO/Fe tunnel junctions is investigated theoretically with a fully self-consistent scheme that combines the non-equilibrium Green's functions method with density functional…
The dual symmetry between the electric and magnetic fields underlies Maxwell's electrodynamics. Due to this symmetry one can describe topological properties of an electromagnetic field in free space and obtain the conservation law of…
Magnetic tunnel junctions (MTJs) are basic building blocks for devices such as magnetic random access memories (MRAMs). The relevance for modern computation of non-volatile high-frequency memories makes ac-transport measurements of MTJs…
We study the electro-physical properties of the Fe/MgO/Fe magnetic tunnel junctions (MTJ). Sample structures are fabricated on top of glass-ceramic substrates by e-beam evaporation in a relatively low vacuum (~10^-4 Torr). The influence of…
We propose a conceptually new way to gather information on the electron bands of buried metal(semiconductor)/insulator interfaces. The bias dependence of low frequency noise in Fe$_{1-x}$V$_{x}$/MgO/Fe (0 $<$ x $<$ 0.25) tunnel junctions…
We study resonant tunnelling effects that can occur in tri-layer structures featuring a dielectric layer sandwiched between two magneto-optical-metal layers. We show that the resonance splitting associated with these phenomena can be…
We report results from Monte Carlo simulations of systems of magnetic dipoles that relax through quantum tunneling, much as Fe_8 crystals at very low temperature.For short times, a hole develops in suitably defined magnetic field…
The tunneling between two parallel two-dimensional electron gases has been investigated as a function of temperature $T$, carrier density $n$, and the applied perpendicular magnetic field $B$. In zero magnetic field the equilibrium resonant…
Tunneling Magnetoresistance between two ferrromagnets is an issue of fundamental importance in spintronics. In this work, we show that tunneling magnetoresistance can also emerge in junctions composed of ferromagnets and time-reversal…
We show that, in a magnetic field parallel to the 2D electron layer, strong electron correlations change the rate of tunneling from the layer exponentially. It results in a specific density dependence of the escape rate. The mechanism is a…
We study the conductance oscillation of an antiferromagnetic layer tunnel junction composed of antiferromagnetic topological insulators (MTIs) such as MnBi$_{2}$Te$_{4}$. In presence of an in-plane magnetic field, we find that the two…
The tunneling splitting in biaxial ferrimagnetic particles at excited states with an explicit calculation of the prefactor of exponent is obtained in terms of periodic instantons which are responsible for tunneling at excited states and is…
A quantized version of the magnetoelectric effect, known as the topological magnetoelectric effect, can exist in a time-reversal invariant topological insulator with all its surface states gapped out by magnetism. This topological phase,…
We investigate tunneling of excitations across a potential barrier separating two spin-1 Bose-Einstein condensates. Using the mean-field theory at the absolute zero temperature, we determine transmission coefficients of excitations in the…
We report magnetotransport measurements in the NbN/ magnetic topological insulator MnBi2Te4 (MBT)/ NbN junction at low temperature. At 10 mK, the nonlinear current-voltage characteristic of the junction shows a tunneling behavior,…