相关论文: Large-scale BN tunnel barriers for graphene spintr…
Two-dimensional (2D) materials for their versatile band structures and strictly 2D nature have attracted considerable attention over the past decade. Graphene is a robust material for spintronics owing to its weak spin-orbit and hyperfine…
Van der Waal's heterostrucutures allow for novel devices such as two-dimensional-to-two-dimensional tunnel devices, exemplified by interlayer tunnel FETs. These devices employ channel/tunnel-barrier/channel geometries. However, during…
We synthesized centimeter-scale single- to few-layer graphene (FLG) films via chemical vapor deposition (CVD) on Ni foils. We demonstrates that the precipitation mechanism may not be the only important mechanism in the formation of graphene…
Spintronics has emerged as a promising field for next-generation devices, offering functionalities beyond complementary metal-oxide-semiconductor (CMOS). A critical challenge in spintronics is to develop systems that can efficiently…
The development of valleytronics demands long-range electronic transport with preserved valley index, a degree of freedom similar to electron spin. A promising structure for this end is a topological one-dimensional (1D) channel formed in…
We report that the {\pi}-electrons of graphene can be spin-polarized to create a phase with a significant spin-orbit gap at the Dirac point (DP) using a graphene-interfaced topological insulator hybrid material. We have grown epitaxial…
Chemical vapour deposition (CVD) is a promising method for producing large-scale graphene (Gr). Nevertheless, microscopic inhomogeneity of Gr grown on traditional metal substrates such as copper or nickel results in a spatial variation of…
Cross-planar di-vacancies (CPDVs) within stacked graphene hexagonal boron nitride (h-BN) heterostructures provide stabilized covalent links to bridge adjacent graphene and h-BN sheets. It was shown that the CPDVs serve as focal points for…
Generating spintronic devices has been a goal for the nano-science. We have used density function theory to determine magnetic phases of single layer and bilayer lithium doped graphene nanoflakes. We have introduced graphene flakes as…
Single layer graphene foils produced by Chemical Vapor Deposition (CVD) are rolled with self-positioned layers of InGaAs/Cr forming compact multi-turn tubular structures that consist on successive graphene/metal/semiconductor…
Spin-orbit coupling in graphene can be enhanced by chemical functionalization, adatom decoration or proximity with a van der Waals material. As it is expected that such enhancement gives rise to a sizeable spin Hall effect, a spin-to-charge…
The two-dimensional electron systems in graphene and in topological insulators are described by massless Dirac equations. Although the two systems have similar Hamiltonians, they are polar opposites in terms of spin-orbit coupling strength.…
A scalable platform to synthesize ultrathin heavy metals may enable high efficiency charge-to-spin conversion for next-generation spintronics. Here we report the synthesis of air-stable, epitaxially registered monolayer Pb underneath…
Hexagonal boron nitride is the only substrate that has so far allowed graphene devices exhibiting micron-scale ballistic transport. Can other atomically flat crystals be used as substrates for making quality graphene heterostructures? Here…
Suspended graphene membrane presents a particular structure with fundamental interests and applications in nanomechanics, thermal transport and optoelectronics. Till now, the commonly used geometries are still quite simple and limited to…
We study the magnetoresistance of spin-valve devices using graphene as a non-magnetic material to connect ferromagnetic leads. As a preliminary step we first study the conductivity of a graphene strip connected to metallic contacts for a…
We perform systematic first-principles calculations of the proximity exchange coupling, induced by cobalt (Co) and nickel (Ni) in graphene, via a few (up to three) layers of hexagonal boron nitride (hBN). We find that the induced spin…
Temperature-dependent resistivity of graphene grown by chemical vapor deposition (CVD) is investigated. We observe in low mobility CVD graphene device a strong insulating behavior at low temperatures and a metallic behavior at high…
Atomic intercalation offers a powerful route for engineering two-dimensional (2D) materials by precisely tuning interlayer electronic coupling and spin configurations. Here, we propose a generic strategy for the construction of fully 2D…
The two-dimensional (2D) material graphene is highly promising for Hall sensors due to its potential of having high charge carrier mobility and low carrier concentration at room temperature. Here, we report the scalable batch-fabrication of…