相关论文: Effects of doping and bias voltage on the screenin…

We report on tip induced doping in local tunnel spectra of single layer graphene (SLG) with tunable back-gate using room temperature scanning tunneling microscopy and spectroscopy (STM/S). The SLG samples, prepared on silicon dioxide…

The excitation spectrum and the collective modes of graphene antidot lattices (GALs) are studied in the context of a $\pi$-band tight-binding model. The dynamical polarizability and dielectric function are calculated within the random phase…

Motivated by the technological relevance of S-doped few-layer graphene (FLG) in battery applications and in the oxygen reduction reaction, we systematically explore the effect of basal plane S-doping on the electronic properties of mono-,…

The low-frequency optical excitations of AA-stacked bilayer graphene are investigated by the tight-binding model. Two groups of asymmetric LLs lead to two kinds of absorption peaks resulting from only intragroup excitations. Each absorption…

We solve a nonlinear integral equation for the electrostatic potential in doped graphene due to an external charge, arising from a Thomas-Fermi (TF) model for screening by graphene's $\pi$ electron bands. In particular, we study the effects…

ABC-stacked trilayer graphene (TLG) are predicted to exhibit novel many-body phenomena due to the existence of almost dispersionless flat-band structures near the charge neutrality point (CNP). Here, using high magnetic field scanning…

In this article we study the ferromagnetic behavior of ABC-stacked trilayer graphene. This is done using a nearest-neighbor tight-binding model, in the presence of long-range Coulomb interactions. For a given electron-electron interaction g…

The layer-based random-phase approximation is further developed to investigate electronic excitations in tri-layer ABC-stacked graphene. All the layer-dependent atomic interactions and Coulomb interactions are included in the dynamic charge…

We report phonon renormalisation in bilayer graphene as a function of doping. The Raman G peak stiffens and sharpens for both electron and hole doping, as a result of the non-adiabatic Kohn anomaly at the $\Gamma$ point. The bilayer has two…

A conversion of AA- to AB-stacking bilayer graphene (BLG) due to interlayer interaction is demonstrated. Two types of interlayer interactions, an attractive and a repulsive, between the Boron and Nitrogen dopant atoms in BLG are found. In…

We calculate 1-loop polarization in bilayer graphene in the 4-band approximation for arbitrary values of frequency, momentum and doping. At low and high energy our result reduces to the polarization functions calculated in the 2-band…

The electrical properties of graphene are known to be modified by chemical species that interact with it. We investigate the effect of doping of graphene-based devices by toluene (C6H5CH3). We show that this effect has a complicated…

We study the electronic properties of AA-stacked bilayer graphene in a transverse electric field. The strong on-site Coulomb repulsion stabilizes the antiferromagnetic order in such a system. The antiferromagnetic order is suppressed by the…

Although plasmon modes exist in doped graphene, the limited range of doping achieved by gating restricts the plasmon frequencies to a range that does not include visible and infrared. Here we show, through the use of first-principles…

We investigate the doping of AA-stacked graphene bilayers. Applying a mean field theory at zero temperature we find that, at half-filling, the bilayer is an antiferromagnetic insulator. Upon doping, the homogeneous phase becomes unstable…

We analyze the effect of screening provided by the additional graphene layer in double layer graphene heterostructures (DLGs) on transport characteristics of DLG devices in the metallic regime. The effect of gate-tunable charge density in…

The thermodynamic, kinetic and magnetic properties of the hydrogen monomer on doped graphene layers were studied by ab initio simulations. Electron doping was found to heighten the diffusion potential barrier, while hole doping lowers it.…

In the continuum low energy model, we calculate the one-loop dynamical polarization functions in ABC-stacked (rhombohedral) $n$-layer graphene in a magnetic field. Neglecting the trigonal warping effects, they are derived as functions of…

We examine spin density wave and triplet superconductivity as possible ground states of the Bernal bilayer graphene. The spin density wave is stable for the unbiased and undoped bilayer. Both the doping and the applied bias voltage destroy…

We study localized plasmonic excitations in bilayer graphene (BLG) nanodisks, comparing AA-stacked and AB-stacked BLG and contrasting the results to the case of two monolayers without electronic hybridization. The electrodynamic response of…