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The buckled structure of silicene leads to the possibility of new kinds of line defects that separate regions with reversed buckled phases. In the present work we show that these new grain boundaries have very low formation energies, one…

材料科学 · 物理学 2013-12-13 Matheus P. Lima , A. Fazzio , Antonio J. R. da Silva

We use ab initio density functional calculations to determine the interaction of a graphene monolayer with the Si(111) surface. We found that graphene forms strong bonds to the bare substrate and accommodates the 12% lattice mismatch by…

材料科学 · 物理学 2015-06-15 Ceren Tayran , Zhen Zhu , Matteo Baldoni , Daniele Selli , Gotthard Seifert , David Tománek

We study silicene on hexagonal boron nitride, using first principles calculations. Since hexagonal boron nitride is semiconducting, the interaction with silicene is weaker than for metallic substrates. It therefore is possible to open a 50…

介观与纳米尺度物理 · 物理学 2013-12-19 T. P. Kaloni , S. Gangopadhyay , N. Singh , B. Jones , U. Schwingenschlögl

Density functional theory with local density approximation for exchange and correlation functional is used to tune the electronic band structure of silicene monolayer. The cohesive energy of free standing monolayer is increasing…

材料科学 · 物理学 2015-06-17 Gul Rahman

Ab initio calculations within the density-functional theory formalism are performed to investigate the chemical functionalization of a graphene-like monolayer of silicon - silicene - with B, N, Al or P atoms. The structural, electronic,…

材料科学 · 物理学 2014-09-05 Jozef Sivek , Hasan Şahin , Bart Partoens , François M. Peeters

The interaction of silicene with Si, C, H, O, Ti atoms along with H$_2$, H$_2$O and O$_2$ molecules are investigated and the induced functionalities thereof are analyzed using first principles density functional theory. Si adatom initially…

材料科学 · 物理学 2013-11-27 V. Ongun Özçelik , S. Ciraci

Using density functional theory combined with orbital-selective band unfolding techniques, we study the effective band structure of silicene($3\times3$)/Ag(111)($4\times4$) structure. Consistent with the ARPES spectra recently obtained by…

介观与纳米尺度物理 · 物理学 2017-06-14 Chao Lian , Sheng Meng

Inert (noble gas) elements are extremely inactive to surrounding chemical environment and are frequently employed as protective gas in various semiconductor fabrication processes. In this work, we surprisingly discover that high doses of…

Although (103) is a stable nominal orientation for both silicon and germanium, experimental observations revealed that in the case of silicon this surface remains disordered on an atomic scale even after careful annealing. We report here a…

材料科学 · 物理学 2009-11-13 C. V. Ciobanu , F. C. Chuang , D. E. Lytle

The deposition of one silicon monolayer on Ag(111) gives rise to a set of superstructures depending on growth conditions. These superstructures are correlated to the epitaxy between the honeycomb structure of silicon (so called silicene)…

材料科学 · 物理学 2015-09-30 H. Jamgotchian , B. Ealet , Y. Colignon , H. Maradj , J-Y. Hoarau , J-P. Biberian , B. Aufray

A one-third monolayer of the heavy metals Sn and Pb deposited on semiconductor substrates can lead to a $\sqrt{3}\times\sqrt{3}$ surface reconstruction, constituting an exciting triangular lattice material platform. A long history of…

强关联电子 · 物理学 2025-03-14 Lucca Marchetti , Matthew Bunney , Domenico Di Sante , Stephan Rachel

We performed low temperature scanning tunneling microscopy (STM) and spectroscopy (STS) studies on the electronic properties of (R3xR3)R30{\deg} phase of silicene on Ag(111) surface. We found the existence of Dirac Fermion chirality through…

介观与纳米尺度物理 · 物理学 2013-10-08 Baojie Feng , Hui Li , Cheng-Cheng Liu , Tingna Shao , Peng Cheng , Yugui Yao , Sheng Meng , Lan Chen , Kehui Wu

The structure and electrical properties of a two-dimensional (2D) sheet of silicon on a graphene substrate are studied using first-principles calculations. A new corrugated rectangular structure of silicon is proposed to be the most…

介观与纳米尺度物理 · 物理学 2014-01-09 Ruiping Zhou , Lok C. Lew Yan Voon , Yan Zhuang

Silicene, a counterpart of graphene, has achieved rapid development due to its exotic electronic properties and excellent compatibility with the mature silicon-based semiconductor technology. Its low room-temperature mobility of about 100…

材料科学 · 物理学 2015-12-31 Hongsheng Liu , Haifeng Feng , Yi Du , Jian Chen , Kehui Wu , Jijun Zhao

Absence of the Dirac cone due to a strong band hybridization is revealed to be a common feature for epitaxial silicene on metal substrates according to our first-principles calculations for silicene on Ir, Cu, Mg, Au, Pt, Al, and Ag…

材料科学 · 物理学 2014-05-28 Ruge Quhe , Yakun Yuan , Jiaxin Zheng , Yangyang Wang , Zeyuan Ni , Junjie Shi , Dapeng Yu , Jinbo Yang , Jing Lu

The structural and electronic properties of the hydrides of silicene and germanene have been studied using ab initio calculations. The trend for the M-H (M=C, Si, Ge) bond lengths, and corresponding bond energies, is consistent with the…

材料科学 · 物理学 2010-07-14 L. C. Lew Yan Voon , E. Sandberg , R. S. Aga , A. A. Farajian

When two or more atoms bind to a solid surface, the substrate can mediate an interaction between them. In this paper, we use density-functional theory to quantify the substrate-mediated pair interaction between two adatoms on a…

材料科学 · 物理学 2007-05-23 Kristen A. Fichthorn , Matthias Scheffler

The low-lying states of graphene contain exciting topological properties that depend on the interplay of different symmetry breaking terms. The corresponding energy gaps remained unexplored until recently, owing to the low energy scale of…

介观与纳米尺度物理 · 物理学 2021-01-04 U. R. Singh , M. Prada , V. Strenzke , B. Bosnjak , T. Schmirander , L. Tiemann , R. H. Blick

Hydrogenated graphene, graphane, is studied on oxygen-terminated silicon dioxide substrate using ab initio calculations. A structure with hydrogenation only on one side of the graphene layer is found stable and its hydrogen configurations…

介观与纳米尺度物理 · 物理学 2011-07-13 M. Ijäs , P. Havu , A. Harju , P. Pasanen

Large scale, homogeneous quasi-free standing monolayer graphene is obtained on cubic silicon carbide, i.e. the 3C-SiC(111) surface, which represents an appealing and cost effective platform for graphene growth. The quasi-free monolayer is…