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We present the metamorphosis in the effective-potential profile of layered heterostructures, for several III-V semiconductor binary compounds, when the band mixing of light and heavy holes increases. A root-locus-like procedure, is directly…

介观与纳米尺度物理 · 物理学 2013-02-28 J. J. Flores-Godoy , A. Mendoza-Álvarez , L. Diago-Cisneros , G. Fernández-Anaya

Transistors based on III-V semiconductor materials have been used for a variety of analog and high frequency applications driven by the high electron mobilities in III-V materials. On the other hand, the hole mobility in III-V materials has…

We have studied the In$_{x}$Ga$_{1-x}$As/In$_{y}$Al$_{1-y}$As (001) interface using first-principles ab-initio pseudopotential calculations, focusing on the effects of alloy composition and strain state on the electronic properties. In…

材料科学 · 物理学 2011-12-30 A. Stroppa , M. Peressi

The shortcomings of mono-component systems, e.g., the gapless nature of graphene, the lack of air-stability in phosphorene, etc. have drawn great attention toward stacked materials expected to show interesting electronic and optical…

介观与纳米尺度物理 · 物理学 2020-12-24 Maryam Mahdavifar , Sima Shekarforoush , Farhad Khoeini

Momentum-matched type II van der Waals heterostructures (vdWHs) have been designed by assembling layered two-dimensional semiconductors (2DSs) with special band-structure combinations - that is, the valence band edge at the Gamma point (the…

[111] ordered common atom strained layer superlattices (in particular the common anion GaSb/InSb system and the common cation InAs/InSb system) are investigated using the ab initio full potential linearized augmented plane wave (FLAPW)…

材料科学 · 物理学 2009-10-30 S. Picozzi , A. Continenza , A. J. Freeman

Using multiband k*p theory we study the size and geometry dependence on the slow light properties of conical semiconductor quantum dots. We find the V-type scheme for electromagnetically induced transparency (EIT) to be most favorable, and…

介观与纳米尺度物理 · 物理学 2010-02-11 D. Barettin , J. Houmark , B. Lassen , M. Willatzen , T. R. Nielsen , J. Mork , A. -P. Jauho

In twisted h-BN/graphene heterostructures, the complex electronic properties of the fast-traveling electron gas in graphene are usually considered to be fully revealed. However, the randomly twisted heterostructures may also have unexpected…

Graphene subject to high levels of shear strain leads to strong pseudo-magnetic fields resulting in the emergence of Landau levels. Here we show that, with modest levels of strain, graphene can also sustain a classical valley hall effect…

介观与纳米尺度物理 · 物理学 2017-03-01 Xian-Peng Zhang , Chunli Huang , Miguel A. Cazalilla

This work reports a study of the nonlinear Hall Effect (HE) in the semimetallic ferromagnet EuB6. A distinct switch in its Hall resistivity slope is observed in the paramagnetic phase, which occurs at a single critical magnetization over a…

强关联电子 · 物理学 2009-09-01 Xiaohang Zhang , Liuqi Yu , Stephan von Molnar , Zachary Fisk , Peng Xiong

Hybrid materials are crucial in photovoltaics where the overall efficiency of the heterostructure is closely related to the level of charge transfer at the interface. Here, using various metal / poly(3-hexylthiophene)(P3HT) heterostructure…

材料科学 · 物理学 2019-08-20 V. Ongun Özçelik , Yingmin Li , Wei Xiong , Francesco Paesani

Assessing the effective relevance of multiband effects in the fullerides is of fundamental importance to understand the complex superconducting and transport properties of these compounds. In this paper we investigate in particular the role…

超导电性 · 物理学 2009-11-10 E. Cappelluti , P. Paci , C. Grimaldi , L. Pietronero

We study the effects of heterostrain on moir\'e bands in twisted bilayer graphene and bilayer transition metal dichalcogenide (TMD) systems. For bilayer graphene with twist angle near $1^\circ$, we show that heterostrain significantly…

材料科学 · 物理学 2019-08-07 Zhen Bi , Noah F. Q. Yuan , Liang Fu

Strain-induced pseudo magnetic fields offer the possibility of realizing zero magnetic field Quantum Hall effect in graphene, possibly up to room temperature, representing a promising avenue for lossless charge transport applications.…

By means of numerical simulation, we study in this work the effects of uniaxial strain on transport properties of strained graphene heterojunctions and explore the possibility to achieve good performance of graphene transistors using these…

介观与纳米尺度物理 · 物理学 2014-04-03 Viet Hung Nguyen , Huy Viet Nguyen , Philippe Dollfus

The bandgap dependence on the number of atomic layers of some families of 2D-materials, can be exploited to engineer and use lateral heterostructures (LHs) as high-performance Field-Effect Transistors (FET). This option can provide very…

介观与纳米尺度物理 · 物理学 2020-01-10 Enrique G. Marin , Damiano Marian , Marta Perucchini , Gianluca Fiori , Giuseppe Iannaccone

We investigate the possible occurrence of field-effect induced superconductivity in the hydrogenated $(111)$ diamond surface by first-principles calculations. By computing the band alignment between bulk diamond and the hydrogenated surface…

The emergence of flat bands in twisted bilayer graphene leads to an enhancement of interaction effects, and thus to insulating and superconducting phases at low temperatures, even though the exact mechanism is still widely debated. The…

强关联电子 · 物理学 2019-11-15 Tommaso Cea , Niels R. Walet , Francisco Guinea

The coexistence of superconductivity and ferromagnetism is a fascinating and complex phenomenon in condensed matter physics, as these two states are typically mutually exclusive due to their competing spin configurations. However, the…

Understanding the opto-electronic properties of semiconducting polymers under external strain is essential for their applications in flexible opto-electronic, light-emitting and photovoltaic devices. While prior studies have highlighted the…

应用物理 · 物理学 2021-11-24 Taeyong Kim , Saejin Oh , Usama Choudhry , Carl Meinhart , Michael L. Chabinyc , Bolin Liao
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