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We present low-temperature Raman measurements on gate tunable graphene encapsulated in hexagonal boron nitride, which allows to study in detail the Raman G and 2D mode frequencies and line widths as function of the charge carrier density.…

介观与纳米尺度物理 · 物理学 2023-02-15 Jens Sonntag , Kenji Watanabe , Takashi Taniguchi , Bernd Beschoten , Christoph Stampfer

We present studies of the photoluminescence (PL), absorption and Raman scattering from poly[2,7-(9,9'-bis(2-ethylhexyl))fluorene] under hydrostatic pressures of 0-100 kbar at room temperature. The well-defined PL and associated vibronics…

The micro-Raman scattering response of a graphene-like location on the surface of bulk natural graphite is investigated both at $T=\unit{4.2}{K}$ and at room temperature in magnetic fields up to 29 T. Two different polarization…

介观与纳米尺度物理 · 物理学 2014-10-03 M. Kuhne , C. Faugeras , P. Kossacki , A. A. L. Nicolet , M. Orlita , Yu. I. Latyshev , M. Potemski

We describe Raman spectroscopy based method of measuring thermal conductivity of thin films, and review significant results achieved with this technique pertinent to graphene and other two-dimensional materials. The optothermal Raman method…

介观与纳米尺度物理 · 物理学 2019-03-18 Hoda Malekpour , Alexander A. Balandin

Active control of heat flow is of both fundamental and applied interest in thermal management and energy conversion. Here, we present a fluctuational electrodynamic study of thermal radiation between twisted bilayer graphene (TBLG),…

介观与纳米尺度物理 · 物理学 2021-06-16 Fuwei Yang , Bai Song

We investigate the contribution of the low-energy electronic excitations towards the Raman spectrum of bilayer graphene for the incoming photon energy Omega >> 1eV. Starting with the four-band tight-binding model, we derive an effective…

介观与纳米尺度物理 · 物理学 2010-08-17 M. Mucha-Kruczynski , O. Kashuba , V. I. Fal'ko

We present temperature dependent frequency shift and line broadening of phonon modes by insertion of atomic layers of Pb and PbTe in the prototype 3D topological insulator Bi2Te3, using Raman spectroscopy. Good quality single crystals of…

介观与纳米尺度物理 · 物理学 2019-07-24 Priyanath Mal , Ganesh Bera , G. R. Turpu , Sunil. K. Srivastava , A. Gangan , Brahmananda Chakraborty , Bipul Das , Pradip Das

Raman spectra from silicon nanostructures, recorded using excitation laser power density of 1.0 kW/cm^2, is employed here to reveal the dominance of thermal effects at temperatures higher than the room temperature. Room temperature Raman…

介观与纳米尺度物理 · 物理学 2012-01-25 Rajesh Kumar , Vivek Kumar , A. K. Shukla

We study theoretically the Raman spectrum of the rotated double-layer graphene, consisting of two graphene layers rotated with respect to each other by an arbitrary angle \theta. We find a relatively simple dependence of the Raman G peak…

介观与纳米尺度物理 · 物理学 2013-11-05 Sinisa Coh , Liang Z. Tan , Steven G. Louie , Marvin L. Cohen

The 1+1 layer folded graphene sheets that deviate from AB stacking are successfully fabricated and their electronic structures are investigated by Raman spectroscopy. Significant blue shift of the 2D band of folded graphene compared to that…

材料科学 · 物理学 2009-11-13 Zhenhua Ni , Yingying Wang , Ting Yu , Yumeng You , Zexiang Shen

We report on an alternative route based on nanomechanical folding induced by AFM tip to obtain weakly interacting multi-layer graphene (wi-MLG) from a chemical vapor deposition (CVD) grown single-layer graphene (SLG). The tip first cuts,…

介观与纳米尺度物理 · 物理学 2019-07-26 C. Pardanaud , A. Merlen , K Gratzer , O. Chuzel , D Nikolaievskyi , L. Patrone , S. Clair , R Ramirez Jimenez , A de Andrés , P. Roubin , J. -L Parrain

Out of plane vibrations are suppressed in graphene layers placed on a substrate. These modes, in suspended samples, are relevant for the understanding of properties such as the resistivity, the thermal expansion coefficient, and other. We…

介观与纳米尺度物理 · 物理学 2013-09-17 Bruno Amorim , Francisco Guinea

The temperature dependence of the spin relaxation time in multilayer graphene (MLG) spin valve devices was measured using a non-local magnetoresistance (NLMR) measurement. A weak localization (WL) was observed from magnetoresistance (MR)…

介观与纳米尺度物理 · 物理学 2013-04-01 Takehiro Yamaguchi , Rai Moriya , Satoru Masubuchi , Kazuyuki Iguchi , Tomoki Machida

We probe electronic excitations between Landau levels in freestanding $N-$layer graphene over a broad energy range, with unprecedented spectral and spatial resolution, using micro-magneto Raman scattering spectroscopy. A characteristic…

介观与纳米尺度物理 · 物理学 2014-10-03 Stéphane Berciaud , Marek Potemski , Clément Faugeras

Raman spectroscopy is one of the widely used methods in the analysis of various samples including carbon-based materials. This study aimed to identify the number of layers and defects in graphene using micro-Raman spectroscopy. More…

光学 · 物理学 2024-03-21 Somayeh Gholipour , Maryam Bahreini , Mohamad Reza Jafarfard

Tantalum diselenide (TaSe$_{2}$) is a metallic transition metal dichalcogenide whose equilibrium structure and vibrational behavior strongly depends on temperature and thickness, including the emergence of charge density wave (CDW) states…

Twisted bilayer graphene (tBLG) provides us with a large rotational freedom to explore new physics and novel device applications, but many of its basic properties remain unresolved. Here we report the synthesis and systematic Raman study of…

The carrier mobility \mu of few-layer graphene (FLG) field-effect transistors increases ten-fold when the SiO_2 substrate is replaced by single-crystal epitaxial Pb(Zr_0.2Ti_0.8)O_3 (PZT). In the electron-only regime of the FLG, \mu reaches…

介观与纳米尺度物理 · 物理学 2009-09-03 X. Hong , A. Posadas , K. Zou , C. H. Ahn , J. Zhu

An experimental study of Raman scattering in N-layer graphene as a function of the top layer doping is reported. At high doping level, achieved by a CHF_3 plasma treatment, we observe a splitting of the $G$ band in the spectra of bilayer…

介观与纳米尺度物理 · 物理学 2010-03-23 M. Bruna , S. Borini

We show the evolution of Raman spectra with number of graphene layers on different substrates, SiO$_{2}$/Si and conducting indium tin oxide (ITO) plate. The G mode peak position and the intensity ratio of G and 2D bands depend on the…

材料科学 · 物理学 2007-10-24 Anindya Das , Biswanath Chakraborty , A. K. Sood