相关论文: Interface traps in graphene field effect devices: …
Optical properties of graphene are explored by using the generalized tight-binding model. The main features of spectral structures, the form, frequency, number and intensity, are greatly enriched by the complex relationship among the…
Graphene field-effect transistors with Co contacts as source and drain electrodes show anomalous distorted transfer characteristics. The anomaly appears only in short-channel devices (shorter than approximately 3 micrometers) and originates…
As most materials available in macroscopic quantities, graphene appears in a polycrystalline form and thus contains grain boundaries. In the present work, the effect of uniaxial strain on the electronic transport properties through graphene…
The present manuscript considers the application of the method of the near-edge X-ray absorption spectroscopy (NEXAFS) for the investigation of the graphene-based systems (from free-standing graphene to the metal-intercalation-like…
Channel conductance measurements can be used as a tool to study thermally activated electron transport in the sub-threshold region of state-of-art FinFETs. Together with theoretical Tight-Binding (TB) calculations, this technique can be…
The extreme versatility of two-dimensional van der Waals (vdW) materials derives from their ability to exhibit new electronic properties when assembled in proximity with dissimilar crystals. For example, although graphene is inherently…
The Hall effect, and the diagonal resistance, which indicates a residual resistivity $\rho_{xx} \approx h/4e^{2}$, are experimentally examined over the p$\leftrightarrow$n transition about the nominal neutrality point in chemical vapor…
Variability effects in graphene can result from the surrounding environment and the graphene material itself, which form a critical issue in examining the feasibility of graphene devices for large-scale production. From the reliability and…
We study the conductivity of a graphene strip taking into account electrostatically-induced charge accumulation on its edges. Using a local dependency of the conductivity on the carrier concentration we find that the electrostatic size…
This paper reviews the theoretical work undertaken using density functional theory (DFT) to explore graphene's interactions with its surroundings. We look at the impact of substrates, gate dielectrics and edge effects on the properties of…
By means of numerical simulation, we study in this work the effects of uniaxial strain on transport properties of strained graphene heterojunctions and explore the possibility to achieve good performance of graphene transistors using these…
Accessing intrinsic properties of a graphene device can be hindered by the influence of contact electrodes. Here, we capacitively couple graphene devices to superconducting resonant circuits and observe clear changes in the resonance-…
Graphene field-effect transistors with source/drain contacts made of metals that can be easily oxidized such as ferromagnetic metals often display a double dip structure in the transfer characteristics because of charge density depinning at…
We consider a graphene sheet in the vicinity of a substrate, which contains charged impurities. An analytic expression for the probability distribution function of voltage fluctuations due to the charged impurities is derived. The…
Understanding the origin of hysteresis in the channel resistance from top gated graphene transistors is important for transistor applications. Capacitance - voltage measurements across the gate oxide on top gated bilayer graphene show…
We measure top-gated graphene field effect transistors (GFETs) with nanosecond-range pulsed gate and drain voltages. Due to high-k dielectric or graphene imperfections, the drain current decreases ~10% over time scales of ~10 us, consistent…
The effect of electron-electron interaction on the low-temperature conductivity of graphene is investigated experimentally. Unlike in other two-dimensional systems, the electron-electron interaction correction in graphene is sensitive to…
We investigate the effects of uniaxial strain on the transport properties of vertical devices made of two twisted graphene layers, which partially overlap each other. We find that because of the different orientations of the two graphene…
Capacitance measurements provide a powerful means of probing the density of states. The technique has proved particularly successful in studying 2D electron systems, revealing a number of interesting many-body effects. Here, we use…
We present measurements on side gated graphene constrictions of different geometries. We characterize the transport gap by its width in back gate voltage and compare this to an analysis based on Coulomb blockade measurements of localized…