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Ubiquitous low frequency 1/f noise can be a limiting factor in the performance and application of nanoscale devices. Here, we quantitatively investigate low frequency electronic noise in single-layer transition metal dichalcogenide MoS2…

介观与纳米尺度物理 · 物理学 2013-08-16 Vinod K. Sangwan , Heather N. Arnold , Deep Jariwala , Tobin J. Marks , Lincoln J. Lauhon , Mark C. Hersam

Transition-metal dichalcogenides open novel opportunities for the exploration of exciting new physics and devices. As a representative system, 2H-MoS$_2$ has been extensively investigated owing to its unique band structure with a large band…

Layered transition-metal dichalcogenides have emerged as exciting material systems with atomically thin geometries and unique electronic properties. Pressure is a powerful tool for continuously tuning their crystal and electronic structures…

We use magnetoresistance measurements at high magnetic field (B \leq 65 T) and low temperature (T \geq 500 mK) to gain fresh insights into the behavior of the upper critical field, Hc2, in superconducting ultrathin FeSe films of varying…

Recent success in the growth of monolayer MoS$_2$ via chemical vapor deposition (CVD) has opened up prospects for the implementation of these materials into thin film electronic and optoelectronic devices. Here, we investigate the…

Measurements of magnetization, specific heat, electrical resistivity, Hall effect, and magnetoresistance on single crystalline samples of LaFeAsO grown in a NaAs flux are reported. While this material is known to be a semimetal, the…

超导电性 · 物理学 2015-06-16 C. A. McElroy , J. J. Hamlin , B. D. White , M. A. McGuire , B. C. Sales , M. B. Maple

Electronic and thermoelectric properties of a two-dimensional MoS2 monolayer containing atomic defects are investigated using density functional theory. All the atomic defects have been found to exhibit endothermic nature. Electronic…

介观与纳米尺度物理 · 物理学 2019-05-17 Munish Sharma , Ashok Kumar , P. K. Ahluwalia

Electrical resistivity, magnetoresistivity, and the Hall effect have been studied in a topological semimetal WTe2 single crystal in the temperature range from 12 to 200 K under magnetic fields up to 9 T. It has been found that quadratic…

The thermoelectric transport properties of CaMg2Bi2, EuMg2Bi2, and YbMg2Bi2 were characterized between 2 and 650K. As synthesized, the polycrystalline samples are found to have lower p-type carrier concentrations than single-crystalline…

材料科学 · 物理学 2012-01-13 A. F. May , M. A. McGuire , J. Ma , O. Delaire , A. Huq , D. J. Singh , W. Cai , H. Wang

Bi2O2Se belongs to a group of quasi-2D semiconductors that can replace silicon in future high-speed/low-power electronics. However, the correlation between crystal/band structure and other physical properties still eludes understanding:…

The carrier dynamics and electronic structures of type-II Weyl semimetal candidates MoTe$_2$ and WTe$_2$ have been investigated by using temperature-dependent optical conductivity [$\sigma(\omega)$] spectra. Two kinds of Drude peaks (narrow…

材料科学 · 物理学 2019-08-27 S. Kimura , Y. Nakajima , Z. Mita , R. Jha , R. Higashinaka , T. D. Matsuda , Y. Aoki

Temperature-dependent I-V and C-V spectroscopy of single InAs nanowire field-effect transistors were utilized to directly shed light on the intrinsic electron transport properties as a function of nanowire radius. From C-V…

材料科学 · 物理学 2015-05-13 Alexandra Ford , Johnny Ho , Yu-Lun Chueh , Yu-Chih Tseng , Zhiyong Fan , Jing Guo , Jeffrey Bokor , Ali Javey

We have investigated the temperature evolution of magnetism and its interrelation with structural parameters in perovskite-based layered compound Sr$_2$IrO$_4$, which is believed to be a $J_{eff}$ = 1/2 Mott insulator. The structural…

强关联电子 · 物理学 2014-12-15 Imtiaz Noor Bhatti , R. Rawat , A. Banerjee , A. K. Pramanik

In organic field effect transistors (FETs), charges move near the surface of an organic semiconductor, at the interface with a dielectric. In the past, the nature of the microscopic motion of charge carriers -that determines the device…

材料科学 · 物理学 2015-06-25 I. N. Hulea , S. Fratini , H. Xie , C. L. Mulder , N. N. Iossad , G. Rastelli , S. Ciuchi , A. F. Morpurgo

We study the low-temperature electron mobility of InSb nanowires. We extract the mobility at 4.2 Kelvin by means of field effect transport measurements using a model consisting of a nanowire-transistor with contact resistances. This model…

Magnetotransport properties of the high-quality FeSe crystal, measured in a wide temperature range and in magnetic fields up to 50 T, show the symmetry of the main holelike and electronlike bands in this compound. In addition to the main…

The mobility of electrons and holes in silicon depends on many parameters. Two of them are the electric field and the temperature. It has been observed previously that the mobility in the transition region between ohmic transport and…

仪器与探测器 · 物理学 2011-08-16 Julian Becker , Eckhart Fretwurst , Robert Klanner

Bulk 1T$^\prime$-MoTe$_2$ shows a structural phase transition from 1T$^\prime$ to Weyl semimetallic (WSM) $ T_{d} $ phase at $\sim$ 240 K. This phase transition and transport properties in the two phases have not been investigated on…

介观与纳米尺度物理 · 物理学 2021-09-06 Manabendra Kuiri , Subhadip Das , D. V. S. Muthu , Anindya Das , A K Sood

We study the thermoelectric properties of bulk $MoSe_2$ within relaxation time approximation including electron-phonon and ionized impurity interactions using first-principles calculations at room temperatures. The anisotropy of this…

材料科学 · 物理学 2022-08-30 Md Golam Rosul , Mona Zebarjadi

Electrical conductivity (EC) is one of the important physical properties of minerals and rocks that can be used to characterize the composition and structure of the deep interior of the Earth.Theoretical studies have predicted that the…

地球物理 · 物理学 2025-06-10 Mako Inada , Yoshiyuki Okuda , Kenta Oka , Hideharu Kuwahara , Steeve Gréaux , Kei Hirose