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The ionic Hubbard model on a cubic lattice is investigated using analytical approximations and Wilson's renormalization group for the charge excitation spectrum. Near the Mott insulating regime, where the Hubbard repulsion starts to…

强关联电子 · 物理学 2009-11-11 Torben Jabben , Norbert Grewe , Frithjof Anders

We propose a fast impurity solver for the general quantum impurity model based on the perturbation theory around the atomic limit, which can be used in combination with the local density approximation (LDA) and the dynamical mean field…

强关联电子 · 物理学 2009-11-10 Xi Dai , Kristjan Haule , Gabriel Kotliar

We use determinant Quantum Monte Carlo simulations and exact diagonalization to explore insulating behavior in the Hubbard model with a bimodal distribution of randomly positioned local site energies. From the temperature dependence of the…

强关联电子 · 物理学 2007-07-10 N. Paris , A. Baldwin , R. T. Scalettar

The two-orbital Hubbard model with the Hund coupling is investigated in a metallic phase close to the Mott insulator. We calculate the one-particle spectral function and the optical conductivity within dynamical mean field theory, for which…

强关联电子 · 物理学 2009-11-07 Yoshiki Imai , Norio Kawakami

We analyze the properties of the quasiparticle excitations of metallic antiferromagnetic states in a strongly correlated electron system. The study is based on dynamical mean field theory (DMFT) for the infinite dimensional Hubbard model…

强关联电子 · 物理学 2009-11-13 J. Bauer , A. C. Hewson

To explore the nature of the metallic state near the transition to a Mott insulator we investigate the t-J model with random exchange interaction in d=infinity dimensions. A numerically exact solution is obtained by an extension of the…

强关联电子 · 物理学 2013-05-14 Junya Otsuki , Dieter Vollhardt

An essentially exact solution of the infinite dimensional Hubbard model is made possible by using a self-consistent mapping of the Hubbard model in this limit to an effective single impurity Anderson model. Solving the latter with quantum…

凝聚态物理 · 物理学 2009-10-22 M. Jarrell , Thomas Pruschke

An investigation is presented of the utility of semiclassical approximations for solving the quantum-impurity problems arising in the dynamical-mean-field approach to the correlated-electron models. The method is based on performing a exact…

强关联电子 · 物理学 2009-11-11 Satoshi Okamoto , Andreas Fuhrmann , Armin Comanac , Andrew J. Millis

We present single-particle and thermodynamic properties of the half-filled single-band Hubbard model in 2D calculated in the self-consistent fluctuation exchange approximation. The low-energy excitations at moderate temperatures and small…

凝聚态物理 · 物理学 2009-10-28 J. J. Deisz , D. W. Hess , J. W. Serene

In this work, we investigate impurity-induced Friedel oscillations in the doped two-dimensional Hubbard model, focusing on the role of holon and doublon excitations. We show that weak impurities, due to the non-fermionic nature of the…

强关联电子 · 物理学 2025-10-23 Anurag Banerjee , Emile Pangburn , Catherine Pépin , Cristina Bena

A detailed study of electronic phase transitions in the ionic Hubbard model at half filling is presented. Within the dynamical mean field approximation a series of transitions from the band insulator via a metallic state to a Mott-Hubbard…

强关联电子 · 物理学 2009-11-13 L. Craco , P. Lombardo , R. Hayn , G. I. Japaridze , E. Müller-Hartmann

We analyze the role of spatial electronic correlations and, in particular, of the magnetic fluctuations in Mott insulators. A half-filled Hubbard model is solved at large strength of the repulsion U on a two-dimensional square lattice using…

强关联电子 · 物理学 2024-02-19 Evgeny A. Stepanov , Maria Chatzieleftheriou , Niklas Wagner , Giorgio Sangiovanni

Utilizing the hierarchy of correlations in the context of a Fermi-Hubbard model, we deduce the presence of quasi-particle bound states at the interface between a Mott insulator and a semiconductor, as well as within a…

强关联电子 · 物理学 2026-01-08 Jan Verlage , Peter Kratzer

We investigate the infinite-dimensional two-orbital Hubbard model at arbitrary band fillings. By means of the self-energy functional approach, we discuss the stability of the metallic state in the systems with same and different bandwidths.…

强关联电子 · 物理学 2009-11-13 Kensuke Inaba , Akihisa Koga

As a prototypical example for a heterostructure combining a weakly and a strongly interacting quantum many-body system, we study the interface between a semiconductor and a Mott insulator. Via the hierarchy of correlations, we derive and…

The question if a Mott insulator and a band insulator are fundamentally different has been the matter of intensive research recently. Here we consider a simple model which allows by tuning one parameter to go continously from a Mott…

强关联电子 · 物理学 2009-11-11 Andreas Fuhrmann , David Heilmann , Hartmut Monien

We investigate the charge density wave phase in the strongly correlated Hubbard model without any other broken symmetry phase. Starting from the atomic Hamiltonian with no hopping, we generate quasiparticle operators corresponding to holons…

强关联电子 · 物理学 2025-04-17 Anurag Banerjee , Emile Pangburn , Chiranjit Mahato , Amit Ghosal , Catherine Pépin

We investigate the phases of the ionic Hubbard model in a two-dimensional square lattice using determinant quantum Monte Carlo (DQMC). At half-filling, when the interaction strength or the staggered potential dominate we find Mott and band…

强关联电子 · 物理学 2009-11-13 K. Bouadim , N. Paris , F. Hebert , G. G. Batrouni , R. T. Scalettar

We present the phase diagram and dynamical correlation functions for the Holstein-Hubbard model at half filling and at zero temperature. The calculations are based on the Dynamical Mean Field Theory. The effective impurity model is solved…

强关联电子 · 物理学 2009-11-10 W. Koller , D. Meyer , A. C. Hewson , Y. Ono

The electronic properties of paramagnetic V_2O_3 are investigated by the ab-initio computational scheme LDA+DMFT(QMC). This approach merges the local density approximation (LDA) with dynamical mean-field theory (DMFT) and uses numerically…

强关联电子 · 物理学 2009-10-31 K. Held , G. Keller , V. Eyert , D. Vollhardt , V. I. Anisimov
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