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相关论文: Quasiparticle band structure and tight-binding mod…

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We present a high-accuracy procedure for electronic structure calculations of strongly correlated materials. To address limitations in current electronic structure methods, we employ density functional theory in combination with the…

In this paper we present a thorough first-principles based density functional theory study of the structural stability, electronic, magnetic, and optical properties of pristine and doped gallium phosphide (GaP) monolayers. The pristine GaP…

材料科学 · 物理学 2023-09-26 Khushboo Dange , Rachana Yogi , Alok Shukla

Electronic structures of single crystalline black phosphorus were studied by state-of-art angleresolved photoemission spectroscopy. Through high resolution photon energy dependence measurements, the band dispersions along out-of-plane and…

We present a compelling evidence for the opening of a bandgap in exfoliated bottom-gated bilayer graphene by fitting the gate-voltage modulated infrared reflectivity spectra in a large range of doping levels with a tight-binding model and…

强关联电子 · 物理学 2015-05-13 A. B. Kuzmenko , I. Crassee , D. van der Marel , P. Blake , K. S. Novoselov

The possibility of an inhomogeneous charge density wave phase is investigated in a system of two coupled electron and hole monolayers separated by a hexagonal boron nitride insulating layer. The charge density wave state is induced through…

介观与纳米尺度物理 · 物理学 2018-12-26 S. Saberi-Pouya , M. Zarenia , T. Vazifehshenas , F. M. Peeters

Hexagonal boron nitride ($\it h$-BN) exhibits dominant $\pi$-bands near the Fermi level, similar to graphene. However, unlike graphene, where tight-binding (TB) models accurately reproduce band edges near the $K$ and $K^{\prime}$ points in…

材料科学 · 物理学 2024-09-04 Srivani Javvaji , Fengping Li , Jeil Jung

Black phosphorus is an infrared layered material. Its bandgap complements other widely studied two-dimensional materials: zero-gap graphene and visible/near-infrared gap transition metal dichalcogenides. Though highly desirable, a…

介观与纳米尺度物理 · 物理学 2017-02-07 Guowei Zhang , Shenyang Huang , Andrey Chaves , Chaoyu Song , V. Ongun Özçelik , Tony Low , Hugen Yan

The temperature dependence of the band gap is crucial to a semiconductor. Bulk black phosphorus (BP) is known to exhibit an anomalous behavior. Through optical spectroscopy, here we show that the temperature effect on BP band gap gradually…

Nonmonotonic bending-induced changes of fundamental band gaps and quasiparticle energies are observed for realistic nanoscale phosphorene nanosheets. Calculations using stochastic many-body perturbation theory (sGW) show that even slight…

材料科学 · 物理学 2019-06-12 Vojtech Vlcek , Eran Rabani , Roi Baer , Daniel Neuhauser

Doped free carriers can substantially renormalize electronic self-energy and quasiparticle band gaps of two-dimensional (2D) materials. However, it is still challenging to quantitatively calculate this many-electron effect, particularly at…

介观与纳米尺度物理 · 物理学 2017-12-14 Shiyuan Gao , Li Yang

The allotropes of a new layered material, phosphorus carbide (PC), have been predicted recently and a few of these predicted structures have already been successfully fabricated. Herein, by using first-principles calculations we…

Black phosphorus stands out from the family of two-dimensional materials as a semiconductor with a direct, layer-dependent bandgap in energy corresponding to the spectral range from the visible to the mid-infrared (mid-IR), as well as many…

光学 · 物理学 2017-10-10 Ruoming Peng , Kaveh Khaliji , Nathan Youngblood , Roberto Grassi , Tony Low , Mo Li

We introduce and classify nonequivalent commensurate stackings for bilayer dice or $\mathcal{T}_3$ lattice. For each of the four stackings with vertical alignment of sites in two layers, a tight-binding model and an effective model…

介观与纳米尺度物理 · 物理学 2023-09-06 P. O. Sukhachov , D. O. Oriekhov , E. V. Gorbar

Incorporation of bismuth (Bi) in dilute quantities in (In)GaAs has been shown to lead to unique electronic properties that can in principle be exploited for the design of high efficiency telecomm lasers. This motivates the development of…

材料科学 · 物理学 2013-09-16 Christopher A. Broderick , Muhammad Usman , Eoin P. O'Reilly

Band structures for solid rare gases (Ne, Ar) have been calculated using the GW approximation. All electron and pseudopotential ab initio calculations were performed using Gaussian orbital basis sets and the dependence of particle-hole gaps…

其他凝聚态物理 · 物理学 2016-08-16 S. Galamić-Mulaomerović , C. H. Patterson

Through infrared spectroscopy, we systematically study the pressure effect on electronic structures of few-layer black phosphorus (BP) with layer number ranging from 2 to 13. We reveal that the pressure-induced shift of optical transitions…

First-principle FLAPW-GGA band structure calculations are employed to obtain the structural, electronic properties and chemical bonding picture for two related layered phases, namely, quaternary oxyarsenides LaZnAsO and YZnAsO. These…

材料科学 · 物理学 2008-10-16 V. V. Bannikov , I. R. Shein , A. L. Ivanovskii

In this research work, the 2D structure of the germanene layer is compounded with 2D group-III phosphides: AlP and GaP. The planar structure of AlP and low-buckled GaP have been taken to form the bilayer patterns. In each case, three…

系统与控制 · 电气工程与系统科学 2022-01-11 Md. Rayid Hasan Mojumder

Quasiparticle calculations are performed to investigate the electronic band structures of various polymorphs of Hf and Zr oxides. The corrections with respect to density-functional-theory results are found to depend only weakly on the…

材料科学 · 物理学 2015-05-14 Myrta Grüning , Riad Shaltaf , Gian-Marco Rignanese

Correlated insulators and superconductivity have been observed in "magic-angle" twisted bilayer graphene, when the nearly flat bands close to neutrality are partially filled. While a momentum-space continuum model accurately describes these…

强关联电子 · 物理学 2019-06-04 Hoi Chun Po , Liujun Zou , T. Senthil , Ashvin Vishwanath