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Conventional electron beam lithography has been used to fabricate mesoscopic Nb wires with a superconducting transition temperature above 7.0 K. The typical line width and the thickness were 200 nm and 45 nm respectively. Nb was deposited…

超导电性 · 物理学 2015-06-24 Nam Kim , Klavs Hansen , Jussi Toppari , Tarmo Suppula , Jukka Pekola

Below a certain temperature Tc (typically cryogenic), some materials lose their electric resistance R entering a superconducting state. Folowing the general trend toward a large scale integration of a greater number of electronic…

An ion beam based dry etching method has been developed for progressive reduction of dimensions of prefabricated nanostructures. The method has been successfully applied to aluminum nanowires and aluminum single electron transistors (SET).…

超导电性 · 物理学 2009-04-07 M. Savolainen , V. Touboltsev , P. Koppinen , K. -P. Riikonen , K. Arutyunov

Single electron sources have been studied as a device to establish an electric current standard for 30 years and recently as an on-demand coherent source for Fermion quantum optics. In order to construct the single electron source on a…

介观与纳米尺度物理 · 物理学 2020-08-18 Shota Norimoto , Shuichi Iwakiri , Masahiko Yokoi , Tomonori Arakawa , Yasuhiro Niimi , Kensuke Kobayashi

Nanowires are formed by indenting and subsequently retracting two pieces of sodium metal. Their cross-section gradually reduces upon retraction and the diameters can be obtained from the conductance. In previous work we have demonstrated…

介观与纳米尺度物理 · 物理学 2009-10-31 A. I. Yanson , I. K. Yanson , J. M. van Ruitenbeek

Large scale graphene electronics desires lithographic patterning of narrow graphene nanoribbons (GNRs) for device integration. However, conventional lithography can only reliably pattern ~20nm wide GNR arrays limited by lithography…

材料科学 · 物理学 2010-07-20 Xinran Wang , Hongjie Dai

We report on the fabrication of nano-devices on the \hkl[-1 0 1] surface of a Weyl semimetal, a macroscopic crystal of TaAs, and low-temperature transport measurements. We can implement electron beam lithography by peeling off and…

Ultrathin GaN nanowires (NWs) are attractive to maximize surface effects and as building block in high-frequency transistors. Here, we introduce a facile route for the top-down fabrication of ordered arrays of GaN NWs with aspect ratios…

We present the preparation and measurements of nanowires of single-crystal NbSe$_2$. These nanowires were prepared on ultrathin ($\lesssim10\text{ nm}$) flakes of NbSe$_2$ mechanically exfoliated from a bulk single crystal using a process…

超导电性 · 物理学 2014-05-07 Shaun A. Mills , Neal E. Staley , Jacob J. Wisser , Chenyi Shen , Zhuan Xu , Ying Liu

We present results of a planar process development based on the combination of electron-beam lithography and dry etching for fabricating high-quality superconducting photosensitive structures in the sub-100nm regime. The devices were…

介观与纳米尺度物理 · 物理学 2010-11-23 H. Bartolf , K. Inderbitzin , L. B. Gómez , A. Engel , A. Schilling

Continuous Nb wires, 7-15 nm in diameter, have been fabricated by sputter-coating single fluorinated carbon nanotubes. Transmission electron microscopy revealed that the wires are polycrystalline, having grain sizes of about 5 nm. The…

超导电性 · 物理学 2009-11-10 Andrey Rogachev , Alexey Bezryadin

We present a new method for nanoscale atom lithography. We propose the use of a supersonic atomic beam, which provides an extremely high-brightness and cold source of fast atoms. The atoms are to be focused onto a substrate using a thin…

原子物理 · 物理学 2015-05-18 Robert J. Clark , Thomas R. Mazur , Adam Libson , Mark G. Raizen

Vertically aligned silicon micro/nanowire arrays of different sizes have been synthesized by combining the modified metal-assisted chemical etching (MACE) and reactive ion etching (RIE) methods. This is a novel lithography-free method to…

A uniform array of single-grain Au nanodots, as small as 5-8 nm, can be formed on silicon using e-beam lithography. The as-fabricated nanodots are amorphous, and thermal annealing converts them to pure Au single crystals covered with a thin…

介观与纳米尺度物理 · 物理学 2011-09-16 N. Clement , G. Patriarche , K. Smaali , F. Vaurette , K. Nishiguchi , D. Troadec , A. Fujiwara , D. Vuillaume

We present results of a fabrication-process development for the lithographic pattern transfer into the sub-100nm range by combining electron-beam lithography and reactive dry etching to obtain high quality niobium-based light-sensitive…

介观与纳米尺度物理 · 物理学 2010-11-23 H. Bartolf , K. Inderbitzin , L. B. Gómez , A. Engel , A. Schilling , H. -W. Hübers , A. Semenov , K. Il'in , M. Siegel

We present a design and a top-down fabrication method for realizing diamond nanowires in both bulk single crystal and polycrystalline diamond. Numerical modeling was used to study coupling between a Nitrogen Vacancy (NV) color center and…

Niobium thin film nanostructures were fabricated using electron beam lithography and a liftoff process involving a four layer resist system. Wires having micrometres in length and below 200 nm in width were deposited on an insulating…

介观与纳米尺度物理 · 物理学 2007-05-23 Torsten Henning

This review article discusses and compares various techniques for fabricating metal nanowires. We begin by defining what we mean by a nanowire, and why such nanostructures are of scientific and technological interest. We then present…

介观与纳米尺度物理 · 物理学 2007-05-23 D. Natelson

Nanoscale electromechanical coupling provides a unique route towards control of mechanical motions and microwave fields in superconducting cavity electromechanical devices. Though their successes in utilizing the optomechanical or…

应用物理 · 物理学 2020-11-26 Jinwoong Cha , Hak-Seong Kim , Jihwan Kim , Seung-Bo Shim , Junho Suh

Superconducting nanowires can be fabricated by decomposition of an organometallic gas using a focused beam of Ga ions. However, physical damage and unintentional doping often results from the exposure to the ion beam, motivating the search…

介观与纳米尺度物理 · 物理学 2015-02-18 Shamashis Sengupta , Chuan Li , Cedric Baumier , Alik Kasumov , S. Gueron , H. Bouchiat , F. Fortuna
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