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To construct Lagrangian based on plate theory and tight-binding model, deflection-field coupling to Dirac fermions in graphene can be investigated. As have been known, deflection-induced strain may cause an effect on the motion of the…

介观与纳米尺度物理 · 物理学 2014-09-18 Bumned Soodchomshom

We calculated the optical properties of an $N$-layer graphene by formulating the dynamical conductivity of each layer. This is the conductivity when an electromagnetic field is localized at a particular layer and differs from the standard…

材料科学 · 物理学 2020-08-25 Ken-ichi Sasaki

Gate-tunable spin-dependent properties could be induced in graphene at room temperature through magnetic proximity effect by placing it in contact with a metallic ferromagnet. Because strong chemical bonding with the metallic substrate…

介观与纳米尺度物理 · 物理学 2020-11-17 Mihovil Bosnar , Ivor Lončarić , P. Lazić , K. D. Belashchenko , Igor Žutić

We investigate the electromechanical response of doubly clamped graphene nanoribbons to a transverse gate voltage. An analytical model is developed to predict the field-induced deformation of graphene nanoribbons as a function of field…

介观与纳米尺度物理 · 物理学 2015-05-14 Zhao Wang , Laetitia Philippe , Jamil Elias

Graphene field-effect transistors with source/drain contacts made of metals that can be easily oxidized such as ferromagnetic metals often display a double dip structure in the transfer characteristics because of charge density depinning at…

材料科学 · 物理学 2014-07-28 Ryo Nouchi , Katsumi Tanigaki

We observe photocurrents induced in single layer graphene samples by illumination of the graphene edges with circularly polarized terahertz radiation at normal incidence. The photocurrent flows along the sample edges and forms a vortex. Its…

We address the tunneling current in a graphene-hBN-graphene heterostructure as function of the twisting between the crystals. The twisting induces a modulation of the hopping amplitude between the graphene layers, that provides the extra…

介观与纳米尺度物理 · 物理学 2014-07-16 Luis Brey

We report a double-layer electronic system made of two closely-spaced but electrically isolated graphene monolayers sandwiched in boron nitride. For large carrier densities in one of the layers, the adjacent layer no longer exhibits a…

We investigate a graphene quantum pump, adiabatically driven by two thin potential barriers vibrating around their equilibrium positions. For the highly doped leads, the pumped current per mode diverges at the Dirac point due to the more…

介观与纳米尺度物理 · 物理学 2015-12-22 Babak Abdollahipour , Ramin Mohammadkhani

Based on the transmission coefficient of tunneling electrons, we have presented tunneling current and conductivity across a square-potential barrier for both graphene and $\alpha$-$\mathcal{T}_3$ lattices under a linearly-polarized…

介观与纳米尺度物理 · 物理学 2021-12-28 Andrii Iurov , Liubov Zhemchuzhna , Godfrey Gumbs , Danhong Huang , Paula Fekete

We have theoretically investigated the electronic and magnetic properties of graphene whose zigzag edges are oxidized. The alteration of these properties by adsorption of $\mathrm{H_{2}O}$ and $\mathrm{NH_3}$ molecules have been considered.…

化学物理 · 物理学 2015-05-14 Julia Berashevich , Tapash Chakraborty

The carriers in graphene tuned close to the Dirac point envisage signatures of the strongly interacting fluid and are subject to hydrodynamic description. The important question is whether strong disorder induces the metal-insulator…

高能物理 - 理论 · 物理学 2020-03-18 Marek Rogatko , Karol I. Wysokinski

The Raman scattering spectra (RS) of two series of monolayer graphene samples irradiated with various doses of C$^{+}$ and Xe$^{+}$ ions were measured after annealing in high vacuum, and in forming gas (95\%Ar+5\%H$_{2}$). It was found that…

介观与纳米尺度物理 · 物理学 2017-09-28 E. Zion , A. Butenko , Yu. Kaganovskii , V. Richter , L. Wolfson , A. Sharoni , E. Kogan , M. Kaveh , I. Shlimak

We study the electronic properties of actual-size graphene nanoribbons subjected to substitutional disorder particularly with regard to the experimentally observed metal-insulator transition. Calculating the local, mean and typical density…

强关联电子 · 物理学 2012-02-13 Gerald Schubert , Holger Fehske

Graphene is an attractive electrode material to contact nanostructures down to the molecular scale since it can be gated electrostatically. Gating can be used to control the doping and the energy level alignment in the nanojunction, thereby…

介观与纳米尺度物理 · 物理学 2016-01-20 Nick R. Papior , Tue Gunst , Daniele Stradi , Mads Brandbyge

We predict a transition to metallicity when a sufficient amount of disorder is induced in graphene. Calculations were performed by means of a first principles stochastic quench method. The resulting amorphous graphene can be seen as…

材料科学 · 物理学 2015-05-28 E. Holmstrom , J. Fransson , O. Eriksson , R. Lizarraga , B. Sanyal , M. I. Katsnelson

We theoretically investigate the time-dependent ballistic transport in metallic graphene nanoribbons after the sudden switch-on of a bias voltage $V$. The ribbon is divided in three different regions, namely two semi-infinite graphenic…

介观与纳米尺度物理 · 物理学 2015-05-14 E. Perfetto , G. Stefanucci , M. Cini

The modulation of the transmitted (reflected) radiation due to change of interband transitions under variation of carriers concentration by the gate voltage is studied theoretically. The calculations were performed for strongly doped…

介观与纳米尺度物理 · 物理学 2015-05-30 M. V. Strikha , F. T. Vasko

We reveal that optical saturation of the low-energy states takes place in graphene for arbitrarily weak electromagnetic fields. This effect originates from the diverging field-induced interband coupling at the Dirac point. Using…

介观与纳米尺度物理 · 物理学 2024-01-02 Behrooz Semnani , Roland Jago , Safieddin Safavi-Naeini , Amir Hamed Majedi , Ermin Malic , Philippe Tassin

Graphene has vast promising applications on the nanoelectronics and spintronics because of its unique magnetic and electronic properties. Making use of an ab initio spin-polarized density functional theory, implemented by the method of…

材料科学 · 物理学 2016-11-26 Zongguo Wang , Shaojing Qin , Chuilin Wang