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Monolayers of transition metal dichalcogenides (TMDs) exhibit bright photoluminescence, a desirable property for light-emitting diodes and single-photon emitters. Because the emission intensity is heavily influenced by factors such as…

介观与纳米尺度物理 · 物理学 2026-01-06 Juri G. Crimmann , Sander J. W. Vonk , Yannik M. Glauser , Gabriel Nagamine , David J. Norris

The relaxation dynamics of photoexcited quasiparticles of three-dimensional (3D) Dirac semimetals are vital towards their application in high performance electronic and optoelectronic devices. In this work, the relaxation dynamics of…

光学 · 物理学 2018-10-03 Wei Lu , Jiwei Ling , Faxian Xiu , Dong Sun

Atomically thin transition metal dichalcogenides (TMDs) are ideal candidates for ultrathin optoelectronics that is flexible and semitransparent. Photodetectors based on TMDs show remarkable performance, with responsivity and detectivity…

介观与纳米尺度物理 · 物理学 2019-04-23 Peize Han , Eli Adler , Yijing Liu , Luke St. Marie , Abdel El Fatimy , Scott Melis , Edward Van Keuren , Paola Barbara

A fundamental understanding of the intrinsic optoelectronic properties of atomically thin transition metal dichalcogenides (TMDs) is crucial for its integration into high performance semiconductor devices. Here, we investigate the transport…

Solution-processable two-dimensional (2D) semiconductors with chemically tunable thickness and associated tunable band gaps are highly promising materials for ultrathin optoelectronics. Here, the properties of free charge carriers and…

Optoelectronic excitations in monolayer MoS2 manifest from a hierarchy of electrically tunable, Coulombic free-carrier and excitonic many-body phenomena. Investigating the fundamental interactions underpinning these phenomena - critical to…

Excitonic effects play a particularly important role in the optoelectronic behavior of two-dimensional semiconductors. To facilitate the interpretation of experimental photoabsorption and photoluminescence spectra we provide (i)…

介观与纳米尺度物理 · 物理学 2017-08-23 E. Mostaani , M. Szyniszewski , C. H. Price , R. Maezono , M. Danovich , R. J. Hunt , N. D. Drummond , V. I. Fal'ko

An excitonic insulator phase is expected to arise from the spontaneous formation of electron-hole pairs (excitons) in semiconductors where the exciton binding energy exceeds the size of the electronic band gap. At low temperature, these…

强关联电子 · 物理学 2022-09-02 Selene Mor , Marc Herzog , Claude Monney , Julia Stähler

Two-dimensional transition metal dichalcogenides (TMDCs) are promising materials for next-generation optoelectronic devices, yet their implementation is hindered by limited sample stability and challenges in forming reliable electrical…

The equilibrium and non-equilibrium optical properties of single-layer transition metal dichalcogenides (TMDs) are determined by strongly bound excitons. Exciton relaxation dynamics in TMDs have been extensively studied by time-domain…

Two-dimensional (2D) semiconducting materials are promising building blocks for optoelectronic applications, many of which require efficient dissociation of excitons into free electrons and holes. However, the strongly bound excitons…

Strain in two-dimensional (2D) transition metal dichalcogenide (TMD) has led to localized states with exciting optical properties, in particular in view of designing one photon sources. The naturally formed of the MoS2 monolayer deposed on…

材料科学 · 物理学 2021-03-17 Adlen Smiri , Thierry Amand , Sihem Jaziri

We demonstrate the application of two-photon absorption transient current technique to wide bandgap semiconductors. We utilize it to probe charge transport properties of single-crystal Chemical Vapor Deposition (scCVD) diamond. The charge…

仪器与探测器 · 物理学 2021-01-22 C. Dorfer , D. Hits , L. Kasmi , G. Kramberger , M. Lucchini , M. Mikuz , R. Wallny

The coupling of light to electrical charge carriers in semiconductors is the foundation of many technological applications. Attosecond transient absorption spectroscopy measures simultaneously how excited electrons and the vacancies they…

材料科学 · 物理学 2023-05-03 Z. Schumacher , S. A. Sato , S. Neb , A. Niedermayr , L. Gallmann , A. Rubio , U. Keller

Understanding the relaxation and recombination processes of excited states in two-dimensional (2D)/three-dimensional (3D) semiconductor heterojunctions is essential for developing efficient optical and (opto)electronic devices which…

The two-carrier transport model as proposed for the two-dimensional electron gas formed at the interfaces of oxide heterostructures is investigated by means of a combined perturbation of near ultra-violet radiation and electrostatic field,…

强关联电子 · 物理学 2012-08-21 A. Rastogi , J. J. Pulikkotil , S. Auluck , Z. Hossain , R. C. Budhani

Optoelectronic functionalities of photodection and light harnessing rely on the band-to-band excitation of semiconductors, thus the spectral response of the devices is dictated and limited by their bandgap. A novel approach, free from this…

介观与纳米尺度物理 · 物理学 2014-06-12 F. Pelayo García de Arquer , Agustín Mihi , Gerasimos Konstantatos

Broadband absorption in the visible spectrum is essential in optoelectronic applications that involve power conversion such as photovoltaics and photocatalysis. Most ultrathin broadband absorbers use parasitic plasmonic structures that…

Atomically thin transition metal dichalcogenides have emerged as promising candidates for sensitive photodetection. Here, we report a photoconductivity study of biased mono- and bilayer molybdenum disulfide field-effect transistors. We…

介观与纳米尺度物理 · 物理学 2014-10-14 Marco M. Furchi , Dmitry K. Polyushkin , Andreas Pospischil , Thomas Mueller

Many linked processes occur concurrently in strongly excited semiconductors, such as interband and intraband absorption, scattering of electrons and holes by the heated lattice, Pauli blocking, bandgap renormalization and the formation of…