利用双光子吸收边瞬态电流技术对合成单晶金刚石进行三维电荷传输映射
仪器与探测器
2021-01-22 v2 应用物理
摘要
我们展示了双光子吸收瞬态电流技术在宽禁带半导体中的应用。我们利用该技术探测单晶化学气相沉积（scCVD）金刚石的电荷传输性质。scCVD金刚石样品内部的载流子由飞秒激光通过同时吸收两个光子激发。由于双光子吸收的特性，载流子的产生被局限在激光焦点周围的空间（三维）内。此种局域化电荷注入允许以细粒度三维分辨率探测半导体体块的电荷传输性质。利用所产生电荷的空间局限，我们绘制了金刚石体块在不同深度的电场分布，并与样品的X射线衍射形貌图进行比较。利用该方法的测量为探究透明宽禁带半导体中电荷传输性质的空间变化提供了独特途径。
引用
@article{arxiv.1905.09648,
title = {Three-dimensional charge transport mapping by two-photon absorption edge transient-current technique in synthetic single-crystalline diamond},
author = {C. Dorfer and D. Hits and L. Kasmi and G. Kramberger and M. Lucchini and M. Mikuz and R. Wallny},
journal= {arXiv preprint arXiv:1905.09648},
year = {2021}
}
备注
This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. The following article appeared in Applied Physics Letters and may be found at https://doi.org/10.1063/1.5090850