相关论文: Spin Drift in Highly Doped n-type Si
Non-local spin injection in lateral spin valves generates a pure spin current which is a diffusive flow of spins (i.e. spin angular momentums) with no net charge flow. The diffusive spins lose phase coherency in precession while undergoing…
High degree of electron spin polarization is of crucial importance in operation of spintronic devices. We study the propagation of spin-polarized electrons through a boundary between two n-type semiconductor regions with different doping…
We construct a spin-drift-diffusion model to describe spin-polarized electron transport in zincblende semiconductors in the presence of magnetic fields, electric fields, and off-diagonal strain. We present predictions of the model for…
Our predictions, based on density-functional calculations, reveal that surface doping of ZnO nanowires with Bi leads to a linear-in-$k$ splitting of the conduction-band states, through spin-orbit interaction, due to the lowering of the…
The spin dynamics of the strongly localized, donor-bound electrons in fluorine-doped ZnSe epilayers is studied by pump-probe Kerr rotation techniques. A method exploiting the spin inertia is developed and used to measure the longitudinal…
We report a successful measurement of the magnetic field-induced spin singlet-triplet transition in silicon-based coupled dot systems. Our specific experimental scheme incorporates a lateral gate-controlled Coulomb-blockaded structure in Si…
Electrical spin transport and accumulation have been measured in highly Si doped Al0.3Ga0.7As utilizing a lateral spin transport device. Persistent photoconductivity allows for the tuning of the effective carrier density of the channel…
We study the electrical detection of spin accumulation at a ferromagnet-silicon interface, which can be verified by measuring a Hanle effect in three-terminal lateral devices. The device structures used consist of a semiconducting Si…
Spin-dependent transport through an interacting single-level quantum dot coupled to ferromagnetic leads with non-collinear magnetizations is analyzed theoretically. The transport properties and average spin of the dot are investigated…
We propose a scheme for electrical measurement of two-electron spin states in a semiconductor double quantum dot. We calculated the adiabatic charge transfer when surface gates are modulated in time. Because of spin-orbit coupling in the…
The conductance resulting from resonant tunneling through a droplet of $N \sim 30$ electrons is used to measure its chemical potential $\mu_N$. Abrupt shifts of $\mu_N$ occur at sharply defined values of the magnetic field, at which the…
We studied the drift of electron spins under an applied DC electric field in single layer graphene spin valves in a field effect transport geometry at room temperature. In the metallic conduction regime ($n \simeq 3.5 \times 10^{16}$…
We present the analysis of the spin signals obtained in NiFe based metallic lateral spin valves. We exploit the spin dependent diffusive equations in both the conventional 1D analytic modeling as well as in 3D Finite Element Method…
Using a macroscopic analysis, we show that time-dependent noncollinear spin transport possesses a wavelike character. This leads to modifications of pure spin-diffusion dynamics and allows one to extract a finite spin-signal propagation…
The transport property of a lateral two-dimensional diluted magnetic semiconductor electron gas under a spatially periodic magnetic field is investigated theoretically. We find that the electron Fermi velocity along the modulation direction…
The presence of non-degenerate valley states in silicon can drastically affect electron dynamics in silicon-based heterostructures, leading to electron spin relaxation and spin-valley coupling. In the context of solid-state spin qubits, it…
The magnetization dynamics in diluted magnetic semiconductor heterostructures based on (Zn,Mn)Se and (Cd,Mn)Te has been studied experimentally by optical methods and simulated numerically. In the samples with nonhomogeneous magnetic ion…
The effect of applying an external electric field on doping-induced spin-orbit splitting of the lowest conduction-band states in a bismuth-doped zinc oxide nanowire is studied by performing electronic structure calculations within the…
We combine extensive precision measurements of the optically detected spin dynamics and magneto-transport measurements in a contiguous set of n-doped bulk GaAs structures in order to unambiguously unravel the intriguing but complex…
We investigate spin precession (Hanle effect) in the prototypical organic spintronic giant magnetoresistance (GMR) device La0.7Sr0.3MnO3(LSMO)/tris(8-hydroxyquinoline)(Alq3)/AlOx/Co. The Hanle effect is not observed in measurements taken by…