相关论文: Which Memristor Theory is Best for Relating Device…

A tungsten filament immersed in superfluid helium has strong hysteretic $I$-$V$ characteristics. By increasing the applied voltage, a remarkable current drop occurs at a transition voltage, at which the filament enters a non-ohmic hot state…

We report on non-volatile memory devices based on multifunctional manganites. The electric field induced resistive switching of Ti/$La_{1/3}$$Ca_{2/3}$Mn$O_3$/n-Si devices is explored using different measurement protocols. We show that…

Memristors as emergent nano-electronic devices have been successfully fabricated and used in non-conventional and neuromorphic computing systems in the last years. Several behavioral or physical based models have been developed to explain…

We present a comprehensive phenomenological model for the crossbar integrated metal-oxide continuous-state memristors. The model consists of static and dynamic equations, which are obtained by fitting a large amount of experimental data,…

Memristors are emerging as key electronic components that retain resistance states without power. Their non-volatile nature and ability to mimic synaptic behavior make them ideal for next-generation memory technologies and neuromorphic…

The recent design of a nanoscale device with a memristive characteristic has had a great impact in nonlinear circuit theory. Such a device, whose existence was predicted by Leon Chua in 1971, is governed by a charge-dependent…

We report a bistable organic memory made of a single organic layer embedded between two electrodes, we compare to the organic/metal nanoparticle/organic tri-layers device [L.P. Ma, J. Liu, and Y. Yang, Appl. Phys. Lett. 80, 2997 (2002)]. We…

Brain-inspired computing aims to mimic cognitive functions like associative memory, the ability to recall complete patterns from partial cues. Memristor technology offers promising hardware for such neuromorphic systems due to its potential…

Usually, resistive switching (RS) devices show digital RS memory (sharp SET and RESET process), which is most suitable for digital data storage applications. Some RS devices also manifest ideal memristive behavior or analog memory…

Heterointerfaces of SrTiO$_{3}$ with other transition metal oxides make up an intriguing family of systems with a bounty of coexisting and competing physical orders. Some examples, such as LaAlO$_{3}$/SrTiO$_{3}$, support a high carrier…

In this research, we report the fabrication and characterization of a Ta/HfO2-x/Mo memristor. The synaptic behavior of a Ta/HfO2-x/Mo memristor has been investigated. HfO2-x (15 nm) was grown using the pulsed laser deposition (PLD) method.…

Memristor has been identified as the fourth fundamental circuit element by Dr. Leon Chua in 1971 and since then it has gathered a lot of interest because of its non-volatility and are considered as a viable solution to the beyond CMOS era…

We report on resistive switching (RS) characteristics of W/WO3-x/Pt-based thin film memristors modulated by precisely controlled oxygen non-stoichiometry. RS properties of the devices with varied oxygen vacancy (VO) concentration have been…

We present low-temperature and high-field magnetotransport data on SrTiO3-LaAlO3 interfaces. The resistance shows hysteresis in magnetic field and a logarithmic relaxation as a function of time. Oscillations in the magnetoresistance are…

This paper examines the coexistence of resistive, capacitive, and inertia (virtual inductive) effects in memristive devices, focusing on ReRAM devices, specifically the interface-type or non-filamentary analog switching devices. A…

Memristive systems emerge as strong candidates for the implementation of Resistive Random Access Memories (RRAM) and neuromorphic computing devices, as they can mimic the electrical analog behavior or biological synapses. In addition,…

In this paper, we introduce some interesting features of a memristor CNN (Cellular Neural Network). We first show that there is the similarity between the dynamics of memristors and neurons. That is, some kind of flux-controlled memristors…

Our paper presents a non-destructive thermal transient measurement method that is able to reveal differences even in the micron size range of MEMS structures. Devices of the same design can have differences in their sacrificial layers as…

The development prospects of memristive elements for non-volatile memory with use of the metal-dielectric-metal sandwich structures with a thin oxide layer are due to the possibility of reliable forming the sustained functional states with…

Memristors are nonlinear two-terminal circuit elements whose resistance at a given time depends on past electrical stimuli. Recently, networks of memristors have received attention in neuromorphic computing since they can be used to…