相关论文: Photo-induced persistent inversion of germanium in…
The photo-induced band structure variation of a rare-earth-based semiconductor, samarium monosulfide (SmS), was investigated using high-harmonic-generation laser-based time-resolved photoelectron spectroscopy. A nonlinear photo-induced band…
Recombination of minority carriers in heavily doped n-InP wafers has been investigated using spectral and time-resolved photoluminescence at different temperatures. Studies of the transmitted luminescence were enabled by the partial…
A negative kink in excess conductivity is observed in p-type non-degenerate (moderate dopant concentration) silicon wafers when excited by a very narrow pulse of 532 nm laser appearing just after the complete positive decay of dark…
Using time- and angle-resolved photoemission, we investigate the ultrafast response of excited electrons in the ternary topological insulator (Bi$_{1 x}$Sb$_{x}$)$_2$Te$_3$ to fs-infrared pulses. We demonstrate that at the critical…
Thanks to its low or negative surface electron affinity and chemical inertness, diamond is attracting broad attention as a source material of solvated electrons produced by optical excitation of the solid-liquid interface. Unfortunately,…
We report an experimental study of generation of photo-induced voltage in nano-porous gold (NPG) thin film under the radiation of obliquely incident nanosecond laser light in visible regions. For s- polarized light, negative voltage is…
We propose an infrared power switch based on an asymmetric high-Q microcavity incorporating a metallic nanolayer in close proximity to a layer made of a phase-change material (PCM). The microcavity is designed so that when the PCM layer is…
Inducing an inversion layer in organic semiconductors is a highly nontrivial, but critical, achievement for producing organic field-effect transistor (OFET) devices, which rely on the generation of inversion, accumulation, and depletion…
Black phosphorous (BP) is a layered semiconductor with high carrier mobility, anisotropic optical response and wide bandgap tunability. In view of its application in optoelectronic devices, understanding transient photo-induced effects is…
Photodetectors at telecommunications-band with high efficiency and high speed are becoming increasingly important as the booming of big data, 5G, internet of things, cloud computing, artificial intelligence and relevent applications.…
Benefit to layer-dependent bandgap, van der Waals materials with surface photovoltaic effect (SPV) enable photodetection over a tunable wavelength range with low power consumption. However, sensitive SPV in the infrared region, especially…
A metallic surface is realized on stoichiometric and insulating (100) SrTiO$_3$ by Ar$^+$ - ion irradiation. The sheet carrier density and Hall mobility of the layer are $\sim$$4.0$ $\times$ $10^{14}$ $/cm^2$ and $\sim$$2$ $\times$ $10^3$…
We report a novel negative photoconductivity (NPC) mechanism in n-type indium arsenide nanowires (NWs). Photoexcitation significantly suppresses the conductivity with a gain up to 10^5. The origin of NPC is attributed to the depletion of…
The ability to tune the Fermi level of semiconductors is at the heart of modern electronics. Here, we demonstrate that persistent photoconductivity (PPC) enables tuning of carrier density, conductivity type, and, consequently, the valley…
Ultrawide bandgap semiconductor technologies offer potentially revolutionary advances in the rapidly developing areas of quantum communication, short wavelength optics, smart energy conversion and biomedical interfaces. These strongly…
The Persistent Photoconductivity (PPC) effect was studied in individual tin oxide (SnO2) nanobelts as a function of temperature, in air, helium, and vacuum atmospheres, and low temperature Photoluminescence measurements were carried out to…
Developments in photonic chips have spurred photon based classical and quantum information processing, attributing to the high stability and scalability of integrated photonic devices [1, 2]. Optical nonlinearity [3] is indispensable in…
Through time-resolved two-color magneto-optical Kerr spectroscopy we have demonstrated that photogenerated transient carriers decrease the coercivity of ferromagnetic InMnAs at low temperatures. This transient ``softening'' persists only…
We demonstrate a novel type of solar cell, one that uses fixed negative charges, formed at the interface of n-Si with Al2O3, to generate strong inversion at the Si surface by electrostatic repulsion. Built-in voltages of up to 755 mV are…
In stark contrast to the conventional charge density wave (CDW) materials, the one-dimensional CDW on the In/Si(111) surface exhibits immediate damping of the CDW oscillation during the photoinduced phase transition. Here, by successfully…