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相关论文: First Principles Study of Bismuth Films at Transit…

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Bi(0001) films with thicknesses up to several bilayers (BLs) are grown on Se-terminated Bi$_2$Se$_3$(0001) surfaces, and low energy electron diffraction (LEED), low energy ion scattering (LEIS) and atomic force microscopy (AFM) are used to…

材料科学 · 物理学 2018-08-01 Haoshan Zhu , Weimin Zhou , Jory A. Yarmoff

Nickel/Bismuth (Ni/Bi) bilayers have recently attracted attention due to the occurrence of time-reversal symmetry breaking in the superconducting state. Here, we report on the structural, magnetic and electric characterization of thin film…

The structure and chemistry of grain boundaries (GBs) are crucial in determining polycrystalline materials' properties. Faceting and solute segregation to minimize the GB energy is a commonly observed phenomenon. In this paper, a deposition…

A recent experiment(Bollmann11) suggested that bismuth forms hexagonal close packed (HCP) films on the Ni(111) surface, of heights 3, 5 and 7 layers. A quantum size effect based on free electrons was proposed in explanation. To test this…

介观与纳米尺度物理 · 物理学 2015-06-15 Qin Gao , Michael Widom

Bismuth (Bi) films hold potential for spintronic devices and topological one-dimensional edge transport. Large-area high-quality (111) Bi ultrathin films are grown on InSb (111)B substrates. Strong film-substrate interactions epitaxially…

The topology of pure Bi is controversial because of its very small ($\sim$10 meV) band gap. Here we perform high-resolution angle-resolved photoelectron spectroscopy measurements systematically on 14$-$202 bilayers Bi films. Using…

Unconventional superconductivity has been suggested to be present at the interface between bismuth and nickel in thin-film bilayers. In this work, we study the structural, magnetic and superconducting properties of sputter deposited Bi/Ni…

The passivation of thin Bi(1 1 1) films with hydrogen and oxide capping layers is investigated from first principles. Considering termination-related changes of the crystal structure, we show how the bands and density of states are…

材料科学 · 物理学 2022-08-29 Christian König , James C. Greer , Stephen Fahy

Grain boundary (GB) segregation is a powerful approach for optimizing the thermal and mechanical properties of metal alloys. In this study, we report significant GB interstitial segregation in a representative substitutional binary alloy…

材料科学 · 物理学 2025-05-27 Zuoyong Zhang , Chuang Deng

Solute segregation in materials with grain boundaries (GBs) has emerged as a popular method to thermodynamically stabilize nanocrystalline structures. However, the impact of varied GB crystallographic character on solute segregation has…

材料科学 · 物理学 2025-03-10 Lydia Harris Serafin , Ethan R. Cluff , Gus L. W. Hart , Eric R. Homer

The macroscopic behavior of polycrystalline materials is influenced by the local variation of properties caused by the presence of impurities and defects. The effect of these impurities at the atomic scale can either embrittle or strengthen…

材料科学 · 物理学 2014-01-23 M. Rajagopalan , M. A. Tschopp , K. N. Solanki

Engineering structure of grain boundaries (GBs) by solute segregation is a promising strategy to tailor the properties of polycrystalline materials. Theoretically it has been suggested that solute segregation can trigger phase transitions…

材料科学 · 物理学 2025-01-28 Vivek Devulapalli , Enze Chen , Tobias Brink , Timofey Frolov , Christian H. Liebscher

Recently, there have been intense efforts in searching for new topological insulator (TI) materials. Based on first-principles calculations, we find that all the ultrathin Bi (111) films are characterized by a nontrivial Z2 number…

材料科学 · 物理学 2012-12-21 Zheng Liu , Chao-Xing Liu , Yong-Shi Wu , Wen-Hui Duan , Feng Liu , Jian Wu

Bismuth telluride - Bi(2)Te(3)- and related compounds have recently attracted strong interest owing to the discovery of the topological insulator properties in many members of this family of materials. The few-quintuple films of these…

材料科学 · 物理学 2015-06-03 K. M. F. Shahil , M. Z. Hossain , V. Goyal , A. A. Balandin

Epitaxial bilayer films of Bi(110) and Ni host a time-reversal symmetry (TRS) breaking superconducting order with an unexpectedly high transition temperature $T_c = 4.1$ K. Using time-domain THz spectroscopy, we measure the low energy…

超导电性 · 物理学 2019-01-10 Prashant Chauhan , Fahad Mahmood , Di Yue , Peng-Chao Xu , Xiaofeng Jin , N. P. Armitage

The electrical conductance of molecular beam epitaxial Bi on BaF2(111) was measured as a function of both film thickness (4-540 nm) and temperature (5-300 K). Unlike bulk Bi as a prototype semimetal, the Bi thin films up to 90 nm are found…

介观与纳米尺度物理 · 物理学 2015-06-03 Shunhao Xiao , Dahai Wei , Xiaofeng Jin

Segregation to defects, in particular to grain boundaries (GBs), is an unavoidable phenomenon leading to changed material behavior over time. With the increase of available computational power, unbiased quantum-mechanical predictions of…

材料科学 · 物理学 2025-05-22 Dominik Gehringer , Lorenz Romaner , David Holec

A systematics of grain boundary (GB) segregation transitions and critical phenomena has been derived to expand the classical GB segregation theory. Using twist GBs as an example, this study uncovers when GB layering vs. prewetting…

材料科学 · 物理学 2022-01-20 Naixie Zhou , Chongze Hu , Jian Luo

Freestanding single-bilayer Bi(111) is a two-dimensional topological insulator with edge states propagating along its perimeter. Given the interlayer coupling experimentally, the topological nature of Bi(111) thin films and the impact of…

We investigate electronic and transport properties of bismuth (111) bilayer in the context of stability of its topological properties against different perturbations. The effects of spin-orbit coupling variations, geometry relaxation and an…

介观与纳米尺度物理 · 物理学 2023-05-05 M. Bieniek , T. Wozniak , P. Potasz
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