相关论文: Rank-Modulation Rewrite Coding for Flash Memories

Distributed storage systems support failures of individual devices by the use of replication or erasure correcting codes. While erasure correcting codes offer a better storage efficiency than replication for similar fault tolerance, they…

The rapid development of multi-core system and increase of data-intensive application in recent years call for larger main memory. Traditional DRAM memory can increase its capacity by reducing the feature size of storage cell. Now further…

Deeply embedded systems often have the tightest constraints on energy consumption, requiring that they consume tiny amounts of current and run on batteries for years. However, they typically execute code directly from flash, instead of the…

For large scale distributed storage systems, flash memories are an excellent choice because flash memories consume less power, take lesser floor space for a target throughput and provide faster access to data. In a traditional distributed…

SSDs are currently replacing magnetic disks in many application areas. A challenge of the underlying flash technology is that data cannot be updated in-place. A block consisting of many pages must be completely erased before a single page…

Variable length coding for Non-Volatile Memory (NVM) technologies is a promising method to improve memory capacity and system performance through compressing memory blocks. However, compression techniques used to improve capacity or…

The read channel in Flash memory systems degrades over time because the Fowler-Nordheim tunneling used to apply charge to the floating gate eventually compromises the integrity of the cell because of tunnel oxide degradation. While…

Erasure coding techniques are getting integrated in networked distributed storage systems as a way to provide fault-tolerance at the cost of less storage overhead than traditional replication. Redundancy is maintained over time through…

For neuromorphic engineering to emulate the human brain, improving memory density with low power consumption is an indispensable but challenging goal. In this regard, emerging RRAMs have attracted considerable interest for their unique…

In recent years, due to the spread of multi-level non-volatile memories (NVM), $q$-ary write-once memories (WOM) codes have been extensively studied. By using WOM codes, it is possible to rewrite NVMs $t$ times before erasing the cells. The…

In recent years, the energy consumption of computing systems has increased and a large fraction of this energy is consumed in main memory. Towards this, researchers have proposed use of non-volatile memory, such as phase change memory…

We study the design of storage-efficient algorithms for emulating atomic shared memory over an asynchronous, distributed message-passing system. Our first algorithm is an atomic single-writer multi-reader algorithm based on a novel…

Resistive random-access memory (ReRAM) is a promising candidate for the next generation non-volatile memory technology due to its simple read/write operations and high storage density. However, its crossbar array structure causes a severe…

In the age of data revolution, a modern storage~or transmission system typically requires different levels of protection. For example, the coding technique used to fortify data in a modern storage system when the device is fresh cannot be…

Write disturbance error (WDE) appears as a serious reliability problem preventing phase-change memory (PCM) from general commercialization, and therefore several studies have been proposed to mitigate WDEs. Verify-and-correction (VnC)…

Recently introduced 3D vertical flash memory is expected to be a disruptive technology since it overcomes scaling challenges of conventional 2D planar flash memory by stacking up cells in the vertical direction. However, 3D vertical flash…

Phase change memory (PCM) has recently emerged as a promising technology to meet the fast growing demand for large capacity memory in computer systems, replacing DRAM that is impeded by physical limitations. Multi-level cell (MLC) PCM…

Effective decision-making in the real world depends on memory that is both stable and adaptive: environments change over time, and agents must retain relevant information over long horizons while also updating or overwriting outdated…

The current mobile applications have rapidly growing memory footprints, posing a great challenge for memory system design. Insufficient DRAM main memory will incur frequent data swaps between memory and storage, a process that hurts…

NAND flash memory is ubiquitous in everyday life today because its capacity has continuously increased and cost has continuously decreased over decades. This positive growth is a result of two key trends: (1) effective process technology…