相关论文: Rank-Modulation Rewrite Coding for Flash Memories

AI clusters today are one of the major uses of High Bandwidth Memory (HBM). However, HBM is suboptimal for AI workloads for several reasons. Analysis shows HBM is overprovisioned on write performance, but underprovisioned on density and…

This paper presents a practical writing/reading scheme in nonvolatile memories, called balanced modulation, for minimizing the asymmetric component of errors. The main idea is to encode data using a balanced error-correcting code. When…

Current portable memory device relies heavily on flash memory technology for its implementation. New generation of non-volatile memory is likely to replace floating gates, charge-trapping memory currently still suffering from inadequate…

In this work, we study a recently proposed direct shaping code for flash memory. This rate-1 code is designed to reduce the wear for SLC (one bit per cell) flash by minimizing the average fraction of programmed cells when storing structured…

Code completion is one of the most widely used features of modern integrated development environments (IDEs). While deep learning has made significant progress in the statistical prediction of source code, state-of-the-art neural network…

\emph{Resistive memories}, such as \emph{phase change memories} and \emph{resistive random access memories} have attracted significant attention in recent years due to their better scalability, speed, rewritability, and yet non-volatility.…

Modern storage systems predominantly use flash-based SSDs as a cache layer due to their favorable performance and cost efficiency. However, in tiny-object workloads, existing flash cache designs still suffer from high write amplification.…

Memory-augmented neural networks consisting of a neural controller and an external memory have shown potentials in long-term sequential learning. Current RAM-like memory models maintain memory accessing every timesteps, thus they do not…

Many performance critical systems today must rely on performance enhancements, such as multi-port memories, to keep up with the increasing demand of memory-access capacity. However, the large area footprints and complexity of existing…

Synthesis of DNA molecules offers unprecedented advances in storage technology. Yet, the microscopic world in which these molecules reside induces error patterns that are fundamentally different from their digital counterparts. Hence, to…

Refresh is an important operation to prevent loss of data in dynamic random-access memory (DRAM). However, frequent refresh operations incur considerable power consumption and degrade system performance. Refresh power cost is especially…

Network switches and routers need to serve packet writes and reads at rates that challenge the most advanced memory technologies. As a result, scaling the switching rates is commonly done by parallelizing the packet I/Os using multiple…

Magnetic random-access memory (MRAM) is a promising memory technology due to its high density, non-volatility, and high endurance. However, achieving high memory fidelity incurs significant write-energy costs, which should be reduced for…

Existing memory reclamation policies on mobile devices may be no longer valid because they have negative effects on the response time of running applications. In this paper, we propose SWAM, a new integrated memory management technique that…

NAND flash memory is ubiquitous in everyday life today because its capacity has continuously increased and cost has continuously decreased over decades. This positive growth is a result of two key trends: (1) effective process technology…

Emerging memory technologies have a significant gap between the cost, both in time and in energy, of writing to memory versus reading from memory. In this paper we present models and algorithms that account for this difference, with a focus…

As transistor-based memory technologies like dynamic random access memory (DRAM) approach their scalability limits, the need to explore alternative storage solutions becomes increasingly urgent. Phase-change memory (PCM) has gained…

In data storage and data transmission, certain patterns are more likely to be subject to error when written (transmitted) onto the media. In magnetic recording systems with binary data and bipolar non-return-to-zero signaling, patterns that…

In the framework of write-once memory (WOM) codes, it is important to distinguish between codes that can be decoded directly and those that require that the decoder knows the current generation to successfully decode the state of the…

Persistent Memory (PM) is a new storage technology thatbrings high performance, byte addressability, and persistency for a lesser cost than DRAM. Due to cache volatility and store reordering, developers must use explicit instructions (e.g.:…