相关论文: Quantum Anomalous Hall Effect in Magnetically Dope…
The quantum anomalous Hall (QAH) effect is a novel topological spintronic phenomenon arising from inherent magnetization and spin-orbit coupling. Various theoretical and experimental efforts have been devoted in search of robust intrinsic…
The quantized version of the anomalous Hall effect has been predicted to occur in magnetic topological insulators, but the experimental realization has been challenging. Here, we report the observation of the quantum anomalous Hall (QAH)…
The experimental realization of the quantum anomalous Hall (QAH) effect in magnetically-doped (Bi, Sb)2Te3 films stands out as a landmark of modern condensed matter physics. However, ultra-low temperatures down to few tens of mK are needed…
Quantum anomalous Hall effect (QAHE), which generates dissipation-less edge current without external magnetic field, is observed in magnetic-ion doped topological insulators (TIs), such as Cr- and V-doped (Bi,Sb)2Te3. The QAHE emerges when…
Recently, this long-sought quantum anomalous Hall effect was realized in the magnetic topological insulator. However, the requirement of an extremely low temperature (approximately 30 mK) hinders realistic applications. Based on…
Based on ab initio calculations, we predict that a monolayer of Cr-doped (Bi,Sb)2Te3 and GdI2 heterostructure is a quantum anomalous Hall insulator with a non-trivial band gap up to 38 meV. The principle behind our prediction is that the…
The quantum anomalous Hall (QAH) effect have been experimentally observed in magnetically-doped topological insulators. However, the QAH effect only at extremely low temperatures due to the weak magnetic coupling, small band gap and low…
Quantum anomalous Hall effect, with a trademark of dissipationless chiral edge states for electronics/spintronics transport applications, can be realized in materials with large spin-orbit coupling and strong intrinsic magnetization. After…
Quantum anomalous Hall effect (QAHE) has been experimentally observed in magnetically doped topological insulators. However, ultra-low temperature (usually below 300 mK), which is mainly attributed to inhomogeneous magnetic doping, becomes…
The anomalous Hall effect in metal-insulator-semiconductor structures having thin (Ga,Mn)As layers as a channel has been studied in a wide range of Mn and hole densities changed by the gate electric field. Strong and unanticipated…
Magnetotransport measurements are presented on paramagnetic (Hg,Mn)Te quantum wells (QWs) with an inverted band structure. Gate-voltage controlled density dependent measurements reveal an unusual behavior in the transition regime from n- to…
The quantum Hall effect is usually observed when the two-dimensional electron gas is subjected to an external magnetic field, so that their quantum states form Landau levels. In this work we predict that a new phenomenon, the quantum…
We have characterized the electronic properties of a high-mobility two-dimensional electron system in modulation doped InAsSb quantum wells and compare them to InSb quantum wells grown in a similar fashion. Using temperature-dependent…
Quantum anomalous Hall effect(QAHE) can only be realized at extremely low temperatures in magnetically doped topological insulators(TIs) due to limitations inherent with the doping precess. In an effort to boost the quantization temperature…
The quantized version of anomalous Hall effect realized in magnetic topological insulators (MTIs) has great potential for the development of topological quantum physics and low-power electronic/spintronic applications. To enable…
The quantum anomalous Hall effect is a fundamental transport response of a topologically non-trivial system in zero magnetic field. Its physical origin relies on the intrinsically inverted electronic band structure and ferromagnetism, and…
Quantum anomalous Hall effect (QAHE) is significant for future low-power electronics devices, where a main challenge is realizing QAHE at high temperatures. In this work, based on experimentally reported two-dimensional (2D) germanene and…
Following the experimental realization of Quantum anomalous Hall (QAH) effect in thin films of chromium-doped (Bi,Sb)$_2$Te$_3$, enhancing the work temperature of QAH effect has emerged as a significant and challenging task. Here we…
In a two-dimensional electron gas, the quantized Hall conductance can be induced by a strong magnetic field, known as the quantum Hall effect, and it can also result from the strong exchange coupling of magnetic ions, dubbed as the "quantum…
The high Chern-number quantum anomalous Hall effect (QAHE) is significant and fascinating due to the presence of multiple dissipationless chiral edge states. Here, we predict that monolayer NiSbO3 possesses the Chern number C = 3, confirmed…