相关论文: Parameters Influencing the Optical Properties Of S…
In this manuscript, we report the results of optical properties of SnS thin films, deposited on FTO coated glass substrates at room temperature by thermal evaporation technique. In addition, the effect of film thickness on the optical…
The parameters influencing the band gap of tin sulphide thin nano-crystalline films have been investigated. Both grain size and lattice parameters are known to influence the band gap. The present study initially investigates each…
Tin Sulphide is a layered compound which retains its structure when deposited as thin films by thermal evaporation. The films were found to have oriented growth with the direction of orientation changing with film thickness. The film's…
Tin Selenide (SnSe) thin films were grown onto glass and alumina substrates by Chemical Vapor Deposition (CVD) method. The structural, micro-structural and morphological characterizations of the as grown thin films were investigated using…
The manuscript reports the variation in optical band-gap of vacuum annealed SnS thin films. The samples were characterized by using X-Ray Diffraction, UV-visible Spectroscopy and Raman Analysis. Results show that while annealing does not…
The present paper discusses the influence of Tin Sulphide's grain size on the performance of ITO/PEDOT:PSS/SnS/Al structured solar cells fabricated by thermal evaporation. The grain sizes were maintained in the range of 11-18~nm by…
Tin monosulfide (SnS) usually exhibits p-type conduction due to the low formation enthalpy of acceptor-type defects, and as a result n-type SnS thin films have never been obtained. This study realizes n-type conduction in SnS thin films for…
Tin sulfide (SnS) has garnered much attention as a promising material for various applications, including solar cells and thermoelectric devices, owing to its favorable optical and electronic properties and the abundant and nontoxic nature…
We study by photoacoustic spectroscopy the band--gap shift effect of CdS films. The CdS films were grown by chemical bath deposition and exposed to different annealing atmospheres over a range of temperature in which the sample structure is…
To contemplate an alternative approach for the minimization of diffusion at high temperature depositions, present findings impart viability of room-temperature deposited reactively sputtered ScN thin film samples. The adopted room…
Tin sulphide thin films of p-type conductivity were grown on glass substrates. The refractive index of the as grown films, calculated using both Transmission and ellipsometry data were found to follow the Sellmeier dispersion model. The…
AlN thin films have been grown on Si (100) substrates by reactive ion beam sputter deposition (IBSD) at different substrate temperatures varying from room temperature (RT) to 500oC. Substrate temperature induced microstructural transition…
Zinc sulfide ZnS thin films with variable structural, optical, electrical, and thermoelectric properties were obtained by changing the source to substrate SSD distance in the physical vaporthermal coating PVTC system. The films crystallized…
The fabrication of optically smooth thin Sn films by vacuum or electrodeposition techniques is usually challenging. Little has been published on how to address this challenge mainly because very few applications require such smooth Sn…
The temperature dependent band gap energy of Cu2ZnSnS4 thin film was studied in the temperature range of 77 to 410 K. Various relevant parameters which explain the temperature variation of the fundamental band gap have been calculated using…
We study the optical and electrical properties of silver films with a graded thickness obtained through metallic evaporation in vacuum on a tilted substrate to evaluate their use as semitransparent electrical contacts. We measure their…
Using a single coil mutual inductance technique, we measure the low temperature dependence of the magnetic penetration depth in superconducting NbN films prepared with similar critical temperatures around 16 K but with different…
We report the uniaxial anisotropic optical constants of Wurtzite type AlN films deposited on Si (100) substrate using DC reactive magnetron sputtering as a function of growth temperature (Ts, 35 to 600 C). Evolution of optical properties…
The semiconducting half Heusler compound YPtSb was predicted theoretically to be capable of changing into topological insulator under proper strain. In this work, p type semiconducting half-Heusler YPtSb thin films were prepared by…
We fabricated NiFe$_\textrm{2}$O$_\textrm{x}$ thin films on MgAl$_2$O$_4$(001) substrates by reactive dc magnetron co-sputtering varying the oxygen partial pressure during deposition. The fabrication of a variable material with oxygen…