相关论文: Physical, optical and nonlinear properties of InS …
Two-dimensional (2D) tin(II) sulfide (SnS) crystals belong to a class of orthorhombic semiconducting materials that are lately attracting significant interest, given their remarkable properties, such as in-plane anisotropic optical and…
A comprehensive bulk and surface investigation of high-quality In$_2$O$_3$(001) single crystals is reported. The transparent-yellow, cube-shaped single crystals were grown using the flux method. Inductively coupled plasma mass spectrometry…
We report the observation of optical second harmonic generation (SHG) in single-layer indium selenide (InSe). We measure a second harmonic signal of $>10^3$ $\textrm{cts/s}$ under nonresonant excitation using a home-built confocal…
Recently, intriguing physical properties have been unraveled in anisotropic semiconductors, in which the in-plane electronic band structure anisotropy often originates from the low crystallographic symmetry. The atomic chain is the ultimate…
We present results of reflectivity measurements with E parallel to c and E perpendicular to c on NdBa2Cu3Ox (Nd123) single crystals close to full oxygen doping. Along the c-axis the optical conductivity shows a well developed absorption…
An optically high-quality single crystal of sodium mesitylene sulfonate crystal was successfully grown by a slow evaporation method using methanol as solvent at room temperature. Single-crystal XRD has characterized the material and belongs…
In-plane optical anisotropy has been detected from monolayer MoS$_2$ grown on a-plane (11-20) sapphire substrate in the ultraviolet-visible wavelength range. Based on the measured optical anisotropy, the energy differences between the…
Hybrid lead halide perovskites, such as CH$_3$NH$_3$PbX$_3$ (X=I, Br), are direct gap semiconductors that offer many superior optoelectronic properties combined with extremely simple solution-processing fabrication methods. This makes them…
We report on the study of the third-order nonlinear optical interactions in In$_{x}$Ga$_{1-x}$As$_{y}$P$_{1-y}$/InP strip-loaded waveguides. The material composition and waveguide structures were optimized for enhanced nonlinear optical…
Single-layer TaS$_2$ is epitaxially grown on Au(111) substrates. The resulting two-dimensional crystals adopt the 1H polymorph. The electronic structure is determined by angle-resolved photoemission spectroscopy and found to be in excellent…
Two-dimensional (2D) metal halides have received more attention because of their electronic and optoelectronic properties. Recently, researchers are interested to investigate the thermoelectric properties of metal halide monolayers because…
The tailored optical properties of $(In_xGa_{1-x})_2O_3$ microcrystalline films were studied as a function of composition x via transmission, Urbach energy analysis, and spatial photoluminescence (PL) mapping of the self-trapped hole (STH)…
Here we report successful growth of mm scale single crystals of stoichiometric FeSc2S4. Single crystal X-ray diffraction yields a cubic structure, spacegroup Fd-3m, with a=10.5097(2) angstroms at T=110(2) K consistent with previous…
Metal mono-chalcogenide compounds offer a large variety of electronic properties depending on chemical composition, number of layers and stacking-order. Among them, the InSe has attracted much attention due to the promise of outstanding…
We report the first determination of the in-plane complex optical conductivity of 1111 high-Tc superconducting iron oxypnictide single crystals PrFeAsO0.6F0.35 and thin films SmFeAsO1-xFx by means of bulk-sensitive conventional and…
$\alpha$-Sn thin films can exhibit a variety of topologically non-trivial phases. Both studying the transitions between these phases and making use of these phases in eventual applications requires good control over the electronic and…
Experimental and theoretical infrared spectra, between 4000-500 cm$^{-1}$ (2.5-20 microns), and infrared band strengths of two solid phases of indene, amorphous and crystalline, are given for the first time. The samples were generated via…
We report on structural and optical properties of InGaN/GaN thin films, with a 0.46o misalignment between the surface and the (0001) plane, which were grown by metal-organic chemical vapor deposition (MOCVD) on 0.34o miscut sapphire…
Indium selenide, In2Se3, has recently attracted growing interest due to its novel properties, including room temperature ferroelectricity, outstanding photoresponsivity, and exotic in-plane ferroelectricity, which open up new regimes for…
Indium Arsenide is a III-V semiconductor with low electron effective mass, a small band gap, strong spin-orbit coupling, and a large g-factor. These properties and its surface Fermi level pinned in the conduction band make InAs a good…