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相关论文: Bulk effects on topological conduction on the surf…

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Topological insulators are characterized by specially protected conduction on their outer boundaries. We show that the protected edge conduction exhibited by 2-D topological insulators (and also Chern insulators) is independent of…

介观与纳米尺度物理 · 物理学 2015-09-01 Quansheng Wu , Liang Du , Vincent E. Sacksteder

Three-dimensional topological insulators feature Dirac-like surface states which are topologically protected against the influence of weak quenched disorder. Here we investigate the effect of surface disorder beyond the weak-disorder limit…

强关联电子 · 物理学 2012-05-30 Gerald Schubert , Holger Fehske , Lars Fritz , Matthias Vojta

The effect of surface disorder on electronic systems is particularly interesting for topological phases with surface and edge states. Using exact diagonalization, it has been demonstrated that the surface states of a 3D topological…

无序系统与神经网络 · 物理学 2015-08-12 Kun Woo Kim , Roger S. K. Mong , Marcel Franz , Gil Refael

In the three-dimensional topological insulator (TI), the physics of doped semiconductors exists literally side-by-side with the physics of ultra-relativistic Dirac fermions. This unusual pairing creates a novel playground for studying the…

介观与纳米尺度物理 · 物理学 2013-11-12 Brian Skinner , Tianran Chen , B. I. Shklovskii

We investigate the effects of magnetic and nonmagnetic impurities on the two-dimensional surface states of three-dimensional topological insulators (TIs). Modeling weak and strong TIs using a generic four-band Hamiltonian, which allows for…

介观与纳米尺度物理 · 物理学 2016-02-26 Andreas Pieper , Holger Fehske

Bulk and surface state contributions to the electrical resistance of single-crystal samples of the topological Kondo insulator compound SmB6 are investigated as a function of crystal thickness and surface charge density, the latter tuned by…

强关联电子 · 物理学 2015-03-06 Paul Syers , Dohun Kim , Michael S. Fuhrer , Johnpierre Paglione

The observation of helical surface states in Bi-based three-dimensional topological insulators has been a challenge since their theoretical prediction. The main issue raises when the Fermi level shifts deep into the bulk conduction band due…

介观与纳米尺度物理 · 物理学 2021-02-18 Shaham Jafarpisheh , An Ju , Kevin Janßen , Takashi Taniguchi , Kenji Watanabe , Christoph Stampfer , Bernd Beschoten

In topological phases of matter for which the bulk and boundary support distinct electronic gaps, there exists the possibility of decoupled mobility gaps in the presence of disorder. This is in analogy with the well-studied problem of…

无序系统与神经网络 · 物理学 2025-01-29 Cormac Grindall , Alexander C. Tyner , Ang-Kun Wu , Taylor L. Hughes , J. H. Pixley

We show that a three dimensional topological insulator doped with magnetic impurities in the bulk can have a regime where the surface is magnetically ordered but the bulk is not. This is in contrast to conventional materials where bulk…

介观与纳米尺度物理 · 物理学 2012-05-11 G. Rosenberg , M. Franz

Based on a self-consistent $t$-matrix approximation, we explore the influence of magnetic and nonmagnetic doping on the surface electronic states and conductivity of topological insulators. We show that warping parameter has a crucial…

介观与纳米尺度物理 · 物理学 2021-06-09 Masomeh Arabikhah , Alireza Saffarzadeh

Three dimensional topological insulators are bulk insulators with $\mathbf{Z}_2$ topological electronic order that gives rise to conducting light-like surface states. These surface electrons are exceptionally resistant to localization by…

介观与纳米尺度物理 · 物理学 2017-03-07 Yishuai Xu , Janet Chiu , Lin Miao , Haowei He , Zhanybek Alpichshev , A. Kapitulnik , Rudro R. Biswas , L. Andrew Wray

We study bulk-boundary correspondences and related surface phenomena stabilized by the second Chern number in three-dimensional insulators driven in adiabatic cycles. Magnetic fields and disorder effects are incorporated in our analysis…

强关联电子 · 物理学 2020-05-07 Bryan Leung , Emil Prodan

An important challenge in the field of topological materials is to carefully disentangle the electronic transport contribution of the topological surface states from that of the bulk. For Bi$_2$Te$_3$ topological insulator samples, bulk…

材料科学 · 物理学 2018-05-02 Prosper Ngabonziza , Yi Wang , Alexander Brinkman

In this report, we scrutinize the thickness dependent resistivity data from the recent literature on electrical transport measurements in topological insulators. A linear increase in resistivity with increase in thickness is expected in the…

强关联电子 · 物理学 2014-09-12 Sourabh Barua , K. P. Rajeev

Topological insulators embody a newly discovered state of matter characterized by conducting spin-momentum locked surface states that span the bulk band gap. So far, most of the study on topological insulator surfaces has been limited to…

介观与纳米尺度物理 · 物理学 2012-06-04 L. A. Wray , Y. Xia , S. -Y. Xu , Y. S. Hor , R. J. Cava , A. Bansil , H. Lin , M. Z. Hasan

We investigate the influence of the hexagonal warping on the transport properties of the topological insulators. We study the charge conductivity within Kubo formalism in the first Born approximation using low energy expansion of the…

介观与纳米尺度物理 · 物理学 2018-06-22 R. S. Akzyanov , A. L. Rakhmanov

We explore a novel transport phenomenon by studying the effect of surface disorder on electron transport through a finite size conductor with side coupled metallic electrodes. In the strong disorder regime the current amplitude increases…

介观与纳米尺度物理 · 物理学 2009-11-06 Santanu K. Maiti

The surface quantum Hall state, magneto-electric phenomena and their connection to axion electrodynamics have been studied intensively for topological insulators. One of the obstacles for observing such effects comes from nonzero…

介观与纳米尺度物理 · 物理学 2015-03-17 G. Tkachov , E. M. Hankiewicz

In the transport studies of topological insulators, microflakes exfoliated from bulk single crystals are often used because of the convenience in sample preparation and the accessibility to high carrier mobilities. Here, based on finite…

介观与纳米尺度物理 · 物理学 2021-11-01 Fan Gao , Yongqing Li

Three-dimensional strong topological insulators (TIs) guarantee the existence of a 2-D conducting surface state which completely covers the surface of the TI. The TI surface state necessarily wraps around the TI's top, bottom, and two…

介观与纳米尺度物理 · 物理学 2015-06-17 Vincent E. Sacksteder , Kristin Bjorg Arnardottir , Stefan Kettemann , Ivan A. Shelykh
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