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We theoretically investigate light propagation and Anderson localization in one-dimensional disordered superlattices composed of dielectric stacks with graphene sheets in between. Disorder is introduced either on graphene material…

无序系统与神经网络 · 物理学 2016-02-19 A. J. Chaves , N. M. R. Peres , F. A. Pinheiro

Anderson localization of electron states on graphene lattice with diagonal and off-diagonal (OD) disorder in the absence of magnetic field is investigated by using the standard finite-size scaling analysis. In the presence of diagonal…

无序系统与神经网络 · 物理学 2008-01-03 Shi-Jie Xiong , Ye Xiong

We study the localization properties of the wavefunctions in graphene flakes with short range disorder, via the numerical calculation of the Inverse Participation Ratio($IPR$) and it scaling which provides the fractal dimension $D_{2}$. We…

介观与纳米尺度物理 · 物理学 2014-02-21 Ioannis Kleftogiannis , Ilias Amanatidis

The effect of strain in graphene is usually modeled by a pseudo-magnetic vector potential which is, however, derived in the limit of small strain. In realistic cases deviations are expected in view of graphene's very high strain tolerance,…

介观与纳米尺度物理 · 物理学 2014-01-27 D. Moldovan , M. Ramezani Masir , F. M. Peeters

We report a metal-insulator transition in disordered graphene with low coverages of hydrogen atoms. Hydrogen interacting with graphene creates short-range disorder and localizes states near the neutrality point. The energy range of…

介观与纳米尺度物理 · 物理学 2015-03-13 Junhyeok Bang , K. J. Chang

We identify graphene layer on a disordered substrate as a possible system where Anderson localization of phonons can be observed. Generally, observation of localization for scattering waves is not simple, because the Rayleigh scattering is…

无序系统与神经网络 · 物理学 2018-11-15 Wei L. Z. Zhao , Konstantin S. Tikhonov , Alexander M. Finkel'stein

We calculate the ground-state energy of Dirac electrons in graphene in the presence of disorder. We take randomly distributed charged impurities at a fixed distance from the graphene sheet and surface fluctuations (ripples) as the main…

介观与纳米尺度物理 · 物理学 2009-11-13 R. Asgari , M. M. Vazifeh , M. R. Ramezanali , E. Davoudi , B. Tanatar

We undertake an exact numerical study of the effects of disorder on the Anderson localization of electronic states in graphene. Analyzing the scaling behaviors of inverse participation ratio and geometrically averaged density of states, we…

介观与纳米尺度物理 · 物理学 2011-05-12 Yun Song , Hongkang Song , Shiping Feng

An analysis of the electron localization properties in doped graphene is performed by doing a numerical multifractal analysis. By obtaining the singularity spectrum of a tight-binding model, it is found that the electron wave functions…

无序系统与神经网络 · 物理学 2013-07-01 J. E. Barrios-Vargas , Gerardo G. Naumis

Graphene is a unique two-dimensional material with rich new physics and great promise for applications in electronic devices. Physical phenomena such as the half-integer quantum Hall effect and high carrier mobility are critically dependent…

Disorder effects strongly influence the transport properties of graphene based nanodevices even to the point of Anderson localization. Focusing on the local density of states and its distribution function, we analyze the localization…

强关联电子 · 物理学 2015-05-13 Gerald Schubert , Jens Schleede , Holger Fehske

We show that the manifestation of quantum interference in graphene is very different from that in conventional two-dimensional systems. Due to the chiral nature of charge carriers, it is sensitive not only to inelastic, phase-breaking…

介观与纳米尺度物理 · 物理学 2008-02-09 F. V. Tikhonenko , D. W. Horsell , R. V. Gorbachev , A. K. Savchenko

Particular strain geometry in graphene could leads to a uniform pseudo-magnetic field of order 10T and might open up interesting applications in graphene nano-electronics. Through quantum transport calculations of realistic strained…

介观与纳米尺度物理 · 物理学 2015-03-13 Tony Low , F. Guinea

We theoretically investigate the effects of atomic defect related short-range disorders and electron-electron interactions on Anderson type localization and the magnetic properties of hexagonal armchair graphene quantum dots using an…

介观与纳米尺度物理 · 物理学 2018-08-01 A. Altıntaş , A. D. Güçlü

We analyze the nature of the single particle states, away from the Dirac point, in the presence of long-range charge impurities in a tight-binding model for electrons on a two-dimensional honeycomb lattice which is of direct relevance for…

介观与纳米尺度物理 · 物理学 2016-06-22 Sabyasachi Nag , Arti Garg , T. V. Ramakrishnan

The existence of Anderson localization, characterized by vanishing diffusion due to strong disorder, has been demonstrated in numerous ways. A systematic approach based on the Anderson quantum model of the Fermi gas in random lattices that…

无序系统与神经网络 · 物理学 2026-03-26 Václav Janiš

We discuss localization properties of the Dirac-like electronic states in monolayers of graphite. In the framework of a general disorder model, we identify the conditions under which such standard localization effects as logarithmic…

介观与纳米尺度物理 · 物理学 2009-11-11 D. V. Khveshchenko

Graphene antidot lattices have recently been proposed as a new breed of graphene-based superlattice structures. We study electronic properties of triangular antidot lattices, with emphasis on the occurrence of dispersionless (flat) bands…

介观与纳米尺度物理 · 物理学 2009-07-16 Mihajlo Vanevic , Vladimir M. Stojanovic , Markus Kindermann

We report on a magneto-Raman scattering study of graphene flakes located on the surface of a bulk graphite substrate. By spatially mapping the Raman scattering response of the surface of bulk graphite with an applied magnetic field, we…

介观与纳米尺度物理 · 物理学 2014-10-31 C. Faugeras , J. Binder , A. A. L. Nicolet , P. Leszczynski , P. Kossacki , A. Wysmolek , M. Orlita , M. Potemski

We analyze, within a minimal model that allows analytical calculations, the electronic structure and Landau levels of graphene multi-layers with different stacking orders. We find, among other results, that electrostatic effects can induce…

介观与纳米尺度物理 · 物理学 2009-11-11 F. Guinea , A. H. Castro Neto , N. M. R. Peres
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