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Graphene is an attractive electrode material to contact nanostructures down to the molecular scale since it can be gated electrostatically. Gating can be used to control the doping and the energy level alignment in the nanojunction, thereby…

介观与纳米尺度物理 · 物理学 2016-01-20 Nick R. Papior , Tue Gunst , Daniele Stradi , Mads Brandbyge

Graphene is a quantum spin Hall insulator with a 45 $\mu$eV wide non-trivial topological gap induced by the intrinsic spin-orbit coupling. Even though this zero-field spin splitting is weak, it makes graphene an attractive candidate for…

Negative differential conductance and tunneling characteristics of two-terminal graphene devices are observed before and after electric breakdown, respectively. The former is caused by the strong scattering under a high E-field, and the…

介观与纳米尺度物理 · 物理学 2011-03-25 Young Jun Shin , Gopinadhan Kalon , Jaesung Son , Jae Hyun Kwon , Jing Niu , Charanjit S. Bhatia , Gengchiau Liang , Hyunsoo Yang

Graphene's original promise to succeed silicon faltered due to pervasive edge disorder in lithographically patterned deposited graphene and the lack of a new electronics paradigm. Here we demonstrate that the annealed edges in…

Transport measurements have revealed several exotic electronic properties of graphene. The possibility to influence the electronic structure and hence control the conductivity by adsorption or doping with adatoms is crucial in view of…

Graphene has exceptional optical, mechanical and electrical properties, making it an emerging material for novel optoelectronics, photonics and for flexible transparent electrode applications. However, the relatively high sheet resistance…

介观与纳米尺度物理 · 物理学 2013-02-06 Guang-Xin Ni , Yi Zheng , Sukang Bae , Chin Yaw Tan , Orhan Kahya , Jing Wu , Byung Hee Hong , Kui Yao , Barbaros Özyilmaz

Two-dimensional graphene exhibits many fascinating properties such as ballistic electronic conduction and quantum Hall effect at room temperature.1-4 Graphene doped electrochemically or through charge-transfer with electron-donor and…

Graphene is a famous truly two-dimensional (2D) material, possessing a cone-like energy structure near the Fermi level and treated as a gapless semiconductor. Its unique properties trigger researchers to find applications of it. The gapless…

材料科学 · 物理学 2024-02-22 Wei-Bang Li , Kuang-I Lin , Yu-Ming Wang , Hsien-Ching Chung , Ming-Fa Lin

High-quality BN-Graphene-BN nanoribbon capacitors with double side-gates of graphene are experimentally realized. Graphene electronic properties can be significantly modulated by the double side-gates. The modulation effects are very…

介观与纳米尺度物理 · 物理学 2015-01-27 Yang Wang , Xiaolong Chen , Weiguang Ye , Zefei Wu , Yu Han , Tianyi Han , Yuheng He , Yuan Cai , Ning Wang

A number of interesting properties of graphene and graphite are postulated to derive from the peculiar bandstructure of graphene. This bandstructure consists of conical electron and hole pockets that meet at a single point in momentum (k)…

强关联电子 · 物理学 2007-05-23 Aaron Bostwick , Taisuke Ohta , Thomas Seyller , K. Horn , Eli Rotenberg

Graphene is the first truly two-dimensional (2D) material, possessing a cone-like energy spectrum near the Fermi energy and treated as a gapless semiconductor. Its unique properties trigger researchers to find more applications of it, such…

介观与纳米尺度物理 · 物理学 2022-06-23 Wei-Bang Li , Yu-Ming Wang , Hsien-Ching Chung , Ming-Fa Lin

In this Letter, we put forward a resolution to the prolonged ambiguity in energy band gaps between theory and experiments of fabricated graphene nanoribbons (GNRs). Band structure calculations using density functional theory are performed…

介观与纳米尺度物理 · 物理学 2016-10-11 Deepika , T. J. Dhilip Kumar , Alok Shukla , Rakesh Kumar

A distinctive feature of single layer graphene is the linearly dispersive energy bands, which in case of multilayer graphene become parabolic. Other than the quantum Hall effect, this distinction has been hard to capture in electron…

介观与纳米尺度物理 · 物理学 2010-10-01 Atindra Nath Pal , Subhamoy Ghatak , Vidya Kochat , Sneha E. S. , Arjun B. S. , Srinivasan Raghavan , Arindam Ghosh

The conductance of ballistic graphene at the neutrality point is due to coherent electron tunneling between the leads, the so called pseudodiffusive regime. The conductance scales as function of the sample dimensions in the same way as in a…

介观与纳米尺度物理 · 物理学 2014-09-17 F. Guinea , M. I. Katsnelson

We propose a new method to use gapped graphene as barrier to confine electrons in gapless graphene and form a good quantum dot, which can be realized on an oxygen-terminated $SiO_{2}$ substrate partly H-passivated. In particular, we use…

介观与纳米尺度物理 · 物理学 2009-10-27 Qiong Ma , Zhi-Rong Lin , Tao Tu , Guang-Can Guo , Guo-Ping Guo

Graphene nanodisk is a graphene derivative with a closed edge. The trigonal zigzag nanodisk with size $N$ has $N$-fold degenerated zero-energy states. We investigate electron-electron interaction effects in the zero-energy sector. We…

强关联电子 · 物理学 2008-04-10 Motohiko Ezawa

Graphene is generally considered to be a strong candidate to succeed silicon as an electronic material. However, to date, it actually has not yet demonstrated capabilities that exceed standard semiconducting materials. Currently…

介观与纳米尺度物理 · 物理学 2015-06-04 Yike Hu , Ming Ruan , Zelei Guo , Rui Dong , James Palmer , John Hankinson , Claire Berger , Walt A. de Heer

We theoretically study the nonlinear optical response of ABC trilayer graphene with inversion symmetry broken by the application of a displacement field perpendicular to the trilayer. We show that rhombohedral trilayer graphene exhibits a…

介观与纳米尺度物理 · 物理学 2025-01-14 Abigail Postlewaite , Arpit Raj , Swati Chaudhary , Gregory A. Fiete

Negative differential resistance (NDR) with room temperature peak-valley-ratio of 8 has been observed in a ballistic field-effect-transistor (FET) based on graphene, having an oblique top gate. Graphene FETs with a top gate inclination…

介观与纳米尺度物理 · 物理学 2015-06-19 Mircea Dragoman , Adrian Dinescu , Daniela Dragoman

Graphene has many advantageous properties, but its lack of an electronic band gap makes this two dimensional material impractical for many nanoelectronic applications, for example field effect transistors. This problem can be circumvented…

介观与纳米尺度物理 · 物理学 2009-12-17 Peter Nemes Incze , Gabor Magda , Katalin Kamaras , Laszlo Peter Biro