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We demonstrate assembly of solution processed semiconducting enriched (99%) single walled carbon nanotubes (s-SWNT) in an array with varying linear density via ac-dielectrophoresis and investigate detailed electronic transport properties of…

介观与纳米尺度物理 · 物理学 2011-05-05 Biddut K. Sarker , Shashank Shekhar , Saiful I. Khondaker

The inability to synthesize single-wall carbon nanotubes (SWCNTs) possessing uniform electronic properties and chirality represents the major impediment to their widespread applications. Recently, there is growing interest to explore and…

Substantial progress on field effect transistors "FETs" consisting of semiconducting single wall carbon nanotubes "s-SWNTs" without detectable traces of metallic nanotubes and impurities is reported. Nearly perfect removal of metallic…

We report ultra-high density assembly of aligned single walled carbon nanotubes (SWNTs) two dimensional arrays via ac dielectrophoresis using high quality surfactant free and stable SWNT solutions. After optimization of frequency and…

介观与纳米尺度物理 · 物理学 2011-01-13 Shashank Shekhar , Paul Stokes , Saiful I. Khondaker

Single-walled carbon nanotubes (SWNTs) have been grown via chemical vapor deposition on high-kappa dielectric SrTiO3/Si substrates, and high-performance semiconducting SWNT field-effect transistors have been fabricated using the thin SrTiO3…

介观与纳米尺度物理 · 物理学 2007-12-05 B. M. Kim , T. Brintlinger , E. Cobas , Haimei Zheng , M. S. Fuhrer , Z. Yu , R. Droopad , J. Ramdani , K. Eisenbeiser

Single walled carbon nanotubes (SWNTs) have attracted immense research interest because of their remarkable physical and electronic properties. In particular, electronic devices fabricated using individual SWNT have shown outstanding device…

介观与纳米尺度物理 · 物理学 2014-05-06 Muhammad R. Islam , Saiful I. Khondaker

High-performance single-wall carbon nanotube field-effect transistors (SWNT-FETs) are fabricated using directed assembly and mass-produced carbon nanotubes (CNTs). These FETs exhibit operating characteristics comparable to state-of-the-art…

介观与纳米尺度物理 · 物理学 2009-11-11 S. A. McGill , S. G. Rao , P. Manandhar , S. Hong , P. Xiong

Single walled carbon nanotubes (SWNT) have displayed a wealth of quantum transport phenomena thus far. Defect free, unperturbed SWNTs with wellbehaved or tunable metal contacts are important to probing the intrinsic electrical properties of…

介观与纳米尺度物理 · 物理学 2015-06-25 Jien Cao , Qian Wang , Hongjie Dai

Molecular level components, like carbon multiwalled nanotubes (MWNT), show great potential for future nanoelectronics. At low frequencies, only the outermost carbon layer determines the transport properties of the MWNT. Due to the…

介观与纳米尺度物理 · 物理学 2007-05-23 Markus Ahlskog , Pertti Hakonen , Mikko Paalanen , Leif Roschier , Reeta Tarkiainen

The extraordinary one-dimensional properties of carbon nanotubes have captivated scientists and engineers since their discovery in the early 1990s. In particular, semiconducting single-wall carbon nanotubes (SWCNTs) are highly promising for…

应用物理 · 物理学 2026-04-09 Ting-Wei Chang , Gustavo M. Rodriguez-Barrios , Andrey Baydin , Junichiro Kono

Single-wall carbon nanotube (SWNT) nanofibrils were assembled onto conductive atomic force microscopy (AFM) probes with the help of dielectrophoresis (DEP). This process involved the application of a 10 V, 2 MHz, AC bias between a…

The excellent properties of transistors, wires, and sensors made from single-walled carbon nanotubes (SWNTs) make them promising candidates for use in advanced nanoelectronic systems. Gas-phase growth procedures such as the high pressure…

介观与纳米尺度物理 · 物理学 2007-05-23 Danvers E. Johnston , Mohammad F. Islam , Arjun G. Yodh , Alan T. Johnson

A simple method combining photolithography and shadow (or angle) evaporation is developed to fabricate single-walled carbon nanotube (SWCNT) devices with tube lengths L~10-50 nm between metal contacts. Large numbers of such short devices…

材料科学 · 物理学 2009-11-10 Ali Javey , Pengfei Qi , Qian Wang , Hongjie Dai

Single walled carbon nanotubes exhibit advanced electrical and surface properties useful for high performance nanoelectronics. Important to future manufacturing of nanotube circuits is large scale assembly of SWNTs into aligned forms.…

材料科学 · 物理学 2007-05-23 Xiaolin Li , Li Zhang , Xinran Wang , Iwao Shimoyama , Xiaoming Sun , Won-Seok Seo , Hongjie Dai

We report strategies of achieving both high assembly yield of carbon nanotubes at selected position of the circuit via dielectrophoresis (DEP) and field effect transistor (FET) yield using semiconducting enriched single walled carbon…

介观与纳米尺度物理 · 物理学 2015-06-03 Muhammad R. Islam , Kristy J. Kormondy , Eliot Silbar , Saiful I. Khondaker

We fabricated reproducible high transparency superconducting contacts consisting of superconducting Ti/Al/Ti trilayers to gated single-walled carbon nanotubes (SWCNTs). The reported semiconducting SWCNT have normal state differential…

超导电性 · 物理学 2007-05-23 H. I. Jørgensen , K. Grove-Rasmussen , T. Novotný , K. Flensberg , P. E. Lindelof

We report measurements on ropes of Single Walled Carbon Nanotubes (SWNT) in low-resistance contact to non-superconducting (normal) metallic pads, at low voltage and at temperatures down to 70 mK. In one sample, we find a two order of…

介观与纳米尺度物理 · 物理学 2019-08-17 M. Kociak , A. Yu. Kasumov , S. Gueron , B. Reulet , L. Vaccarini , I. I. Khodos , Yu. B. Gorbatov , V. T. Volkov , H. Bouchiat

Photoluminescence properties of semiconducting single wall carbon nanotubes (s-SWNT) thin films with different metallic single wall carbon nanotubes (m-SWNT) concentrations are reported. s-SWNT purified samples are obtained by polymer…

Single-walled carbon nanotube (SWCNT) films are promising materials for transparent conductive films (TCFs) with potential applications in flexible displays, touch screens, solar cells and solid-state lighting1,2. However, further…

材料科学 · 物理学 2019-09-27 Qiang Zhang , Weiya Zhou , Kewei Li , Nan Zhang , Yanchun Wang , Zhuojian Xiao , Qingxia Fan , Sishen Xie

High performance p- and n-type single-walled carbon nanotube (SWNT) field-effect transistors (FETs) are obtained by using high and low work function metals, Pd and Al as source/drain (S/D) electrodes respectively. Ohmic contacts made to…

介观与纳米尺度物理 · 物理学 2007-05-23 Ali Javey , Qian Wang , Woong Kim , Hongjie Dai
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