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相关论文: Screening and gap generation in bilayer graphene

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Electron interactions in undoped bilayer graphene lead to instability of the gapless state, `which-layer' symmetry breaking, and energy gap opening at the Dirac point. In contrast to single layer graphene, the bilayer system exhibits…

介观与纳米尺度物理 · 物理学 2010-04-16 Rahul Nandkishore , Leonid Levitov

We have studied the excitonic gap formation in the Bernal Stacked, bilayer graphene (BLG) structures at half-filling. Considering the local Coulomb interaction between the layers, we calculate the excitonic gap parameter and we discuss the…

介观与纳米尺度物理 · 物理学 2016-10-03 V. Apinyan , T. K. Kopeć

Exciton instability in graphene bilayer systems is studied in the case of a short-ranged Coulomb interaction and a finite voltage difference between the layers. Self-consistent exciton gap equations are derived and solved numerically and…

强关联电子 · 物理学 2008-07-02 Raoul Dillenschneider , Jung Hoon Han

We derive a gap equation for bilayer excitonic systems based on density functional theory and benchmark our results against quantum Monte-Carlo simulations and recent experiments on double bilayer graphene. The gap equation has a mean-field…

材料科学 · 物理学 2021-05-19 Fredrik Nilsson , Ferdi Aryasetiawan

In this paper, we consider the spectral properties of the bilayer graphene with the local excitonic pairing interaction between the electrons and holes. We consider the generalized Hubbard model, which includes both intralayer and…

介观与纳米尺度物理 · 物理学 2017-12-22 V. Apinyan , T. K. Kopeć

We theoretically investigate the possibility of excitonic condensation in a system of two graphene monolayers separated by an insulator, in which electrons and holes in the layers are induced by external gates. In contrast to the recent…

强关联电子 · 物理学 2009-03-25 Maxim Yu. Kharitonov , Konstantin B. Efetov

Exciton condensation in semiconductors and semimetals has long been predicted but remains elusive. In a semiconductor, condensation occurs when the exciton binding energy matches the band gap. This binding energy results from a balance…

强关联电子 · 物理学 2025-06-11 Harley D. Scammell , Oleg P. Sushkov

We investigate the effect of on-site Coulomb repulsion $U$ on the band gap of the electrically gated bilayer graphene by employing coherent potential approximation in the paramagnetic state, based on an ionic two-layer Hubbard model. We…

强关联电子 · 物理学 2016-03-17 Jin-Rong Xu , Ze-Yi Song , Hai-Qing Lin , Yu-Zhong Zhang

Both insulating and conducting electronic behaviors have been experimentally seen in clean bilayer graphene samples at low temperature, and there is still no consensus on the nature of the interacting ground state at half-filling and in the…

强关联电子 · 物理学 2019-09-11 Jia Ning Leaw , Ho-Kin Tang , Pinaki Sengupta , Fakher F. Assaad , Igor F. Herbut , Shaffique Adam

The tight-binding model of a graphene bilayer is used to find the gap between the conduction and valence bands, as a function of both the gate voltage and as the doping by donors or acceptors. The total Hartree energy is minimized and the…

介观与纳米尺度物理 · 物理学 2015-05-13 L. A. Falkovsky

We analyze the Coulomb interacting problem in undoped graphene layers by using an excitonic variational ansatz. By minimizing the energy, we derive a gap equation which reproduces and extends known results. We show that a full treatment of…

强关联电子 · 物理学 2011-05-27 J. Sabio , F. Sols , F. Guinea

Superfluidity in e-h bilayers in graphene and GaAs has been predicted many times but not observed. A key problem is how to treat the screening of the Coulomb interaction for pairing. Different mean-field theories give dramatically different…

强关联电子 · 物理学 2014-02-26 D. Neilson , A. Perali , A. R. Hamilton

Graphene, a single sheet of graphite with honeycomb lattice structure, has massless carriers with tunable density and polarity. We investigate the ground state phase diagram of two graphene sheets (embedded in a dielectric) separated by…

介观与纳米尺度物理 · 物理学 2009-11-13 C. -H. Zhang , Yogesh N. Joglekar

The optical response and the ground state of graphene and graphene-like systems are determined self-consistently. Deriving equations of motion for the basic variables, graphene Bloch equations are introduced and combined with a variational…

材料科学 · 物理学 2012-01-10 T. Stroucken , J. H. Grönqvist , S. W. Koch

Excitonic bound states are characterised by a binding energy $\epsilon_b$ and a single-particle band gap $\Delta_b$. This work provides a theoretical description for both strong ($\epsilon_b\sim\Delta_b$) and weak ($\epsilon_b\ll\Delta_b$)…

强关联电子 · 物理学 2023-02-22 Harley D. Scammell , Oleg P. Sushkov

For graphene to be utilized in the digital electronics industry the challenge is to create bandgaps of order 1eV as simply as possible. The most successful methods for the creation of gaps in graphene are (a) confining the electrons in…

介观与纳米尺度物理 · 物理学 2014-03-13 A. R. Davenport , J. P. Hague

We have investigated the Coulomb screening properties and plasmon spectrum in a bilayer graphene under a perpendicular electric bias. The bias voltage applied between the two graphene layers opens a gap in the single particle energy…

介观与纳米尺度物理 · 物理学 2010-02-04 Xue-Feng Wang , Tapash Chakraborty

Recent measurements have shown that a continuously tunable bandgap of up to 250 meV can be generated in biased bilayer graphene [Y. Zhang et al., Nature 459, 820 (2009)], opening up pathway for possible graphene-based nanoelectronic and…

材料科学 · 物理学 2010-02-11 Cheol-Hwan Park , Steven G. Louie

The effects of Coulomb interactions on the electronic properties of bilayer graphene nanoribbons (BGNs) covered by a gate electrode are studied theoretically. The electron density distribution and the potential profile are calculated…

介观与纳米尺度物理 · 物理学 2015-05-19 Hengyi Xu , T. Heinzel , A. A. Shylau , I. V. Zozoulenko

A sufficiently strong Coulomb interaction may open an excitonic fermion gap and thus drive a semimetal-insulator transition in graphene. In this paper, we study the Eliashberg theory of excitonic transition by coupling the fermion gap…

强关联电子 · 物理学 2015-03-17 Jing-Rong Wang , Guo-Zhu Liu
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