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相关论文: Extended dynamic Mott-transition in the two-band H…

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We apply the slave-boson approach of Kotliar and Ruckenstein to the two-band Hubbard model with an Ising like Hund's rule coupling and bands of different widths. On the mean-field level of this approach we investigate the Mott transition…

强关联电子 · 物理学 2009-11-25 A. Rüegg , M. Indergand , S. Pilgram , M. Sigrist

The Mott metal-insulator transition in the Hubbard model is studied by constructing a dynamical slave-boson mean-field theory in the limit of large lattice coordination number $z$ that incorporates the binding between doubly occupied…

强关联电子 · 物理学 2020-01-15 Sen Zhou , Long Liang , Ziqiang Wang

We examine whether the Mott transition of a half-filled, two-orbital Hubbard model with unequal bandwidths occurs simultaneously for both bands or whether it is a two-stage process in which the orbital with narrower bandwith localizes first…

强关联电子 · 物理学 2007-05-23 L. de' Medici , A. Georges , S. Biermann

We study by dynamical mean field theory the ground state of a quarter-filled Hubbard model of two bands with different bandwidths. At half-filling, this model is known to display an orbital selective Mott transition, with the narrower band…

强关联电子 · 物理学 2018-07-11 Francesco Grandi , Adriano Amaricci , Massimo Capone , Michele Fabrizio

We investigate the role of the bandwidth difference in the Mott metal-insulator transition of a two-band Hubbard model in the limit of infinite dimensions, by means of a Gutzwiller variational wave function as well as by dynamical…

强关联电子 · 物理学 2007-05-23 Michel Ferrero , Federico Becca , Michele Fabrizio , Massimo Capone

Recent advances in the field of quantum Monte Carlo simulations for impurity problems allow --within dynamical mean field theory-- for a more thorough investigation of the two-band Hubbard model with narrow/wide band and SU(2)-symmetric…

统计力学 · 物理学 2007-05-23 R. Arita , K. Held

A new mean field theory is proposed for the Mott transition in the Hubbard model based on the slave rotor representation of the electron operator. This theory provides a better description of the role of the long range charge correlation in…

强关联电子 · 物理学 2016-01-12 Tao Li , Tomonori Shirakawa , Kazuhiro Seki , Seiji Yunoki

The Mott-Hubbard metal-insulator transition is investigated in a two-band Hubbard model within dynamical mean-field theory. To this end, we use a suitable extension of Wilson's numerical renormalization group for the solution of the…

强关联电子 · 物理学 2009-11-10 Thomas Pruschke , Ralf Bulla

We investigate the Mott transitions in two-orbital Hubbard systems. Applying the dynamical mean field theory and the self-energy functional approach, we discuss the stability of itinerant quasi-particle states in each band. It is shown that…

强关联电子 · 物理学 2009-11-11 A. Koga , K. Inaba , N. Kawakami

The Mott transition in a two-band Hubbard model involving subbands of different widths is studied as a function of temperature using dynamical mean field theory combined with exact diagonalization. The phase diagram is shown to exhibit two…

强关联电子 · 物理学 2009-11-11 A. Liebsch

We investigate the half-filled Hubbard model with spatially alternating interactions by means of the two-site dynamical mean-field theory. It is found that a single Mott transition occurs when two kinds of interactions are increased. This…

强关联电子 · 物理学 2012-04-20 Takamitsu Saitou , Akihisa Koga , Atsushi Yamamoto

The Mott metal-insulator transition in the two-band Hubbard model in infinite dimensions is studied by using the linearized dynamical mean-field theory recently developed by Bulla and Potthoff. The phase boundary of the metal-insulator…

强关联电子 · 物理学 2009-10-31 Y. Ono , R. Bulla , A. C. Hewson

A slave-boson functional-integral method has been developed for the Hubbard model with arbitrary, orbital degeneracy $D$. Its saddle-point mean-field theory is equivalent to the Gutzwiller approximation, as in the case of single-band…

强关联电子 · 物理学 2009-10-28 Hideo Hasegawa

We review the recently proposed extension of the Gutzwiller approximation, M. Schiro' and M. Fabrizio, Phys. Rev. Lett. 105, 076401 (2010), designed to describe the out-of-equilibrium time-evolution of a Gutzwiller-type variational wave…

强关联电子 · 物理学 2015-06-04 Michele Fabrizio

We investigate the Mott transitions in the two-orbital Hubbard model with different bandwidths. By combining dynamical mean field theory with the exact diagonalization, we discuss the stability of itinerant quasi-particle states in each…

强关联电子 · 物理学 2009-11-10 Akihisa Koga , Norio Kawakami , T. M. Rice , Manfred Sigrist

We extend previous studies on orbital-selective Mott transitions in the paramagnetic state of the half-filled degenerate two-band Hubbard model to the general doped case, using a high-precision quantum Monte Carlo dynamical mean-field…

强关联电子 · 物理学 2009-09-22 Eberhard Jakobi , Nils Blümer , Peter van Dongen

We investigate the orbital selective Mott transition in two-band Hubbard models by means of the Gutzwiller variational theory. In particular, we study the influence of a finite local hybridisation between electrons in different orbitals on…

强关联电子 · 物理学 2009-11-13 Joerg Buenemann , David Rasch , Florian Gebhard

We study the effects of interorbital hopping on orbital fluctuations and Mott-Hubbard metal-insulator transition (MIT) in the two-orbital Hubbard model within the extended linearized dynamical mean-field theory. By mapping the model onto an…

强关联电子 · 物理学 2009-11-11 Yun Song , Liang-Jian Zou

A systematic study has been made on the metal-insulator (MI) transition of the doubly degenerate Hubbard model (DHM) in the paramagnetic ground state, by using the slave-boson mean-field theory which is equivalent to the Gutzwiller…

强关联电子 · 物理学 2009-10-30 Hideo Hasegawa

Mott metal-insulator transitions in an M-fold orbitally degenerate Hubbard model are studied by means of a generalization of the linearized dynamical mean-field theory. The method allows for an efficient and reliable determination of the…

强关联电子 · 物理学 2009-11-07 Y. Ono , M. Potthoff , R. Bulla
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