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We demonstrate integrated photonic circuits for quantum devices using sputtered polycrystalline aluminum nitride (AlN) on insulator. The on-chip AlN waveguide directional couplers, which are one of the most important components in quantum…

Photonic miniaturization requires seamless integration of linear and nonlinear optical components to achieve passive and active functions simultaneously. Among the available material systems, silicon photonics holds immense promise for…

光学 · 物理学 2014-01-21 Chi Xiong , Wolfram H. P. Pernice , Hong X. Tang

Aluminum nitride (AlN) is an emerging material for integrated quantum photonics due to its large $\chi^{(2)}$ nonlinearity. Here we demonstrate the hybrid integration of AlN on silicon nitride (SiN) photonic chips. Composite microrings are…

Electro-optic modulators are fundamental components in atomic physics experiments, including trapped-ion systems used in precision metrology and quantum computing. To enable scalable photonic integration, we design and analyze an integrated…

Silicon photonics has offered a versatile platform for the recent development of integrated optomechanical circuits. However, silicon is limited to wavelengths above 1100 nm and does not allow device operation in the visible spectrum range…

材料科学 · 物理学 2012-10-04 Chi Xiong , Wolfram H. P. Pernice , Xiankai Sun , Carsten Schuck , King Y. Fong , Hong X. Tang

In the rapidly evolving area of integrated photonics, there is a growing need for materials that satisfy the particular requirements of increasingly complex and specialized devices and applications. Present photonic material platforms have…

Aluminum nitride (AlN) is an extremely promising material for integrated photonics because of the combination of strong \c{hi}2 and \c{hi}3 nonlinearities. However, the intrinsic hardness of the material and charging effects during electron…

We report the fabrication and characterization of photonic waveguides from sputtered aluminum nitride (AlN). The AlN films were deposited on 6" silicon substrates with a 3 $\mu$m buried silicon oxide layer using reactive DC magnetron…

Development of low-loss photonic components in the ultraviolet (UV) band will open new prospects for classical and quantum optics. Compared with other integrated platforms, aluminum nitride (AlN) is particularly attractive as it features an…

Scandium-doped aluminum nitride has recently emerged as a promising material for quantum photonic integrated circuits (PICs) due to its unique combination of strong second-order nonlinearity, ferroelectricity, piezoelectricity, and…

In this paper, we propose exploiting dispersion-engineered nanophotonic waveguides in generating unprecedented ultra-broadband spectral and polarisation entanglement using spontaneous four-wave mixing parametric processes. We developed a…

光学 · 物理学 2025-07-10 Mahmoud Almassri , Mohammed F. Saleh

Aluminum nitride (AlN) is an emerging material for integrated quantum photonics with its excellent linear and nonlinear optical properties. In particular, its second-order nonlinear susceptibility $\chi^{(2)}$ allows single-photon…

材料科学 · 物理学 2021-06-29 G. Terrasanta , M. Müller , T. Sommer , S. Geprägs , R. Gross , M. Althammer , M. Poot

We demonstrate wideband integrated photonic circuits in sputter-deposited aluminum nitride (AlN) thin films. At both near-infrared and visible wavelengths, we achieve low propagation loss in integrated waveguides and realize high-quality…

光学 · 物理学 2012-06-13 Wolfram H. P. Pernice , Chi Xiong , Hong X. Tang

Silicon nitride based photonic integrated circuits offer a wavelength operation window in the near infrared down to visible light, which makes them attractive for life science applications. However, they exhibit significantly different…

Integrated nonlinear photonic circuits received rapid development in recent years, providing all-optical functionalities enabled by cavity-enhanced photon-photon interaction for classical and quantum applications. A high-efficiency…

应用物理 · 物理学 2020-07-08 Mengdi Zhao , Woraprach Kusolthossakul , Kejie Fang

Large cross-section GaN waveguides are proposed as a suitable architecture to achieve integrated quantum photonic circuits. Directional couplers with this geometry have been designed with aid of the beam propagation method and fabricated…

Aluminum nitride (AlN) has emerged as a leading platform for integrated photonics in the visible and ultraviolet spectral ranges, particularly for quantum information applications involving trapped atoms. However, achieving low propagation…

光学 · 物理学 2025-08-29 Nikolay Videnov , Matthew L. Day , Michal Bajcsy

Aluminum nitride (AlN) has been widely used in microeletromechanical resonators for its excellent electromechanical properties. Here we demonstrate the use of AlN as an optomechanical material that simultaneously offer low optical and…

介观与纳米尺度物理 · 物理学 2012-06-11 Chi Xiong , Xiankai Sun , King Y. Fong , Hong X. Tang

Optical parametric oscillators (OPOs) have been widely used for decades as tunable, narrow linewidth, and coherent light sources for reaching long wavelengths and are attractive for applications such as quantum random number generation and…

Scandium-doped aluminum nitride (AlScN) with an asymmetric hexagonal wurtzite structure exhibits enhanced second-order nonlinear and piezoelectric properties compared to aluminum nitride (AlN), while maintaining a relatively large bandgap.…

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