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In transition metal dichalcogenides (TMDCs), charge carriers have spin, pseudospin, and valley degrees of freedom associated with magnetic moments. The monolayers and bilayers of the TMDCs, in particular, MoS$_2$, lead strong couplings…

材料科学 · 物理学 2021-11-29 Yeon Lee , Dasol Kim , Dong Eon Kim , Alexis Chacón

Transition metal dichalcogenides have been the primary materials of interest in the field of valleytronics for their potential in information storage, yet the limiting factor has been achieving long valley decoherence times. We explore the…

介观与纳米尺度物理 · 物理学 2018-10-17 Christopher J. Ciccarino , Thomas Christensen , Ravishankar Sundararaman , Prineha Narang

Monolayer transition metal dichalcogenides have emerged as prominent candidates to explore the complex interplay between the spin and the valleys degrees of freedom. The strong spin-orbit interaction and broken inversion symmetry within…

Manipulation of spin and valley degrees of freedom is a key step towards realizing novel quantum technologies, for which atomically thin transition metal dichalcogenides (TMDCs) have been established as promising candidates. In monolayer…

Electrons in monolayer transition metal dichalcogenides (TMDs) possess both the valley and spin degree of freedom. These internal quantum degrees of freedom have provided an ideal laboratory for exploring both new physical phenomena and…

介观与纳米尺度物理 · 物理学 2017-02-21 Zefang Wang , Jie Shan , kin Fai Mak

The valley degree of freedom of electrons in solids has been proposed as a new type of information carriers beyond the electronic charge and spin. Recent experimental demonstrations of the optical orientation of the valley polarization and…

介观与纳米尺度物理 · 物理学 2017-07-14 Jieun Lee , Kin Fai Mak , Jie Shan

Electron valleys in transition-metal dichalcogenide monolayers drive novel physics and allow designing multifunctional architectures for applications. We propose to manipulate the electron valleys in these systems for spin/valley filter and…

介观与纳米尺度物理 · 物理学 2021-11-15 Ao Zhang , Kaike Yang , Yun Zhang , Anlian Pan , Mingxing Chen

Atomically thin transition metal dichalcogenides (TMDs) possess coupling of spin and valley degrees of freedom, making them promising for spin-valleytronics. ln monolayer TMDs, the emission helicity is locked to the valleys as a consequence…

材料科学 · 物理学 2018-02-07 Chongyun Jiang , Fucai Liu , Jorge Cuadra , Zumeng Huang , Ke Li , Ajit Srivastava , Zheng Liu , Wei-bo Gao

We study valley-dependent spin transport theoretically in monolayer transition-metal dichalcogenides in which a variety of spin and valley physics are expected because of spin-valley coupling. The results show that the spins are…

介观与纳米尺度物理 · 物理学 2020-04-28 Yuya Ominato , Junji Fujimoto , Mamoru Matsuo

Valleytronics targets the exploitation of the additional degrees of freedom in materials where the energy of the carriers may assume several equal minimum values (valleys) at non-equivalent points of the reciprocal space. In single layers…

We theoretically study spin and valley transport in a transition-metal dichalcogenide(TMDC)/ferromagnet heterostructure under a perpendicular magnetic field. We find that microwave-driven spin pumping induces a valley-selective spin…

介观与纳米尺度物理 · 物理学 2026-01-01 Xin Hu , Yuya Ominato , Mamoru Matsuo

Monolayer transition metal dichalcogenides (TMDCs) constitute the core group of materials in the emerging semiconductor technology of valleytronics. While the coupled spin-valley physics of pristine TMDC materials and their heterstructures…

介观与纳米尺度物理 · 物理学 2023-11-14 Chumki Nayak , Suvadip Masanta , Sukanya Ghosh , Shubhadip Moulick , Atindra Nath Pal , Indrani Bose , Achintya Singha

Quantum transport and spintronics regimes are studied in p- and n-doped atomic layers of hexagonal transition metal dichalcogenides (TMDCs), subject to the interplay between the valley structure and spin-orbit coupling. We find how spin…

介观与纳米尺度物理 · 物理学 2014-12-23 Hector Ochoa , Francesca Finocchiaro , Francisco Guinea , Vladimir I. Fal'ko

We study the valley-dependent magnetic and transport properties of massive Dirac fermions in multivalley systems such as the transition metal dichalcogenides. The asymmetry of the zeroth Landau level between valleys and the enhanced…

介观与纳米尺度物理 · 物理学 2014-06-03 Tianyi Cai , Shengyuan A. Yang , Xiao Li , Fan Zhang , Junren Shi , Wang Yao , Qian Niu

A twisted honeycomb bilayer exhibits a moir\'e superstructure that is composed of a hexagonal arrangement of AB and BA stacked domains separated by domain boundaries. In the case of twisted bilayer graphene, the application of an electric…

介观与纳米尺度物理 · 物理学 2025-10-17 Harold J. W. Zandvliet , Pantelis Bampoulis , Cristiane Morais Smith , Lumen Eek

Strong spin-orbit coupling in transition metal dichalcogenide (TMDC) monolayers results in spin resolvable band structures about the $K$ and $K'$ valleys such that the eigenbasis of a 2D quantum dot (QD) in a TMDC monolayer in zero field is…

介观与纳米尺度物理 · 物理学 2018-04-25 Matthew Brooks , Guido Burkard

Valley-selective optical selection rules and a spin-valley locking in transition-metal dichalcogenide (TMDC) monolayers are at the heart of "valleytronic physics", which exploits the valley degree of freedom and has been a major research…

The band structure of many semiconducting monolayer transition metal dichalcogenides (TMDs) possesses two degenerate valleys, with equal and opposite Berry curvature. It has been predicted that, when illuminated with circularly polarized…

介观与纳米尺度物理 · 物理学 2017-09-19 Nicolas Ubrig , Sanghyun Jo , Marc Philippi , Davide Costanzo , Helmuth Berger , Alexey B. Kuzmenko , Alberto F. Morpurgo

Realizations of some topological phases in two-dimensional systems rely on the challenge of jointly incorporating spin-orbit and magnetic exchange interactions. Here, we predict the formation and control of a fully valley-polarized quantum…

介观与纳米尺度物理 · 物理学 2021-10-25 Marc Vila , Jose H. Garcia , Stephan Roche

The band structure of transition metal dichalcogenides (TMDCs) with valence band edges at different locations in the momentum space could be harnessed to build devices that operate relying on the valley degree of freedom. To realize such…

介观与纳米尺度物理 · 物理学 2016-09-06 Oriol Lopez Sanchez , Dmitry Ovchinnikov , Shikhar Misra , Adrien Allain , Andras Kis
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