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Heat dissipation in current-carrying cryogenic nanostructures is problematic because the phonon density of states decreases strongly as energy decreases. We show that the Coulomb interaction can prove a valuable resource for carrier cooling…

介观与纳米尺度物理 · 物理学 2013-08-27 John King Gamble , Mark Friesen , Robert Joynt , S. N. Coppersmith

The energy spectrum and wave functions of electrons in a single silicon quantum dot provide valuable insights into the capabilities and limitations of such a system in quantum information processing. Here we investigate the low-lying…

介观与纳米尺度物理 · 物理学 2026-03-26 Bilal Tariq , Xuedong Hu

On the basis of ab-initio total-energy electronic-structure calculations, we find that interface localized electron states at the SiC/SiO$_2$ interface emerge in the energy region between 0.3 eV below and 1.2 eV above the bulk…

材料科学 · 物理学 2017-11-22 Yu-ichiro Matsushita , Atsushi Oshiyama

Varying the thermal boundary conductance at metal-dielectric interfaces is of great importance for highly integrated electronic structures such as electronic, thermoelectric and plasmonic devices where heat dissipation is dominated by…

应用物理 · 物理学 2020-12-08 S. M. Oommen , S. Pisana

We propose a way to simulate mesoscopic transport processes with counter-propagating wavepackets of ultracold atoms in quasi one-dimensional (1D) waveguides, and show quantitative agreement with analytical results. The method allows the…

量子气体 · 物理学 2015-10-22 Kunal K. Das

Quantum dots are artificial atoms used for a multitude of purposes. Charge defects are commonly present and can significantly perturb the designed energy spectrum and purpose of the dots. Voltage controlled exchange energy in silicon double…

介观与纳米尺度物理 · 物理学 2012-03-21 Rajib Rahman , Erik Nielsen , Richard P. Muller , Malcolm S. Carroll

Two-dimensional charge carrier accumulation at oxide heterointerfaces presents a paradigm shift for oxide electronics. Like a capacitor, interfacial charge buildup couples to an electric field across the dielectric medium. To prevent the…

Discontinuity of dielectric constants at the interface is a common feature of all nanostructures and semiconductor heterostructures. Near such interfaces, a charged particle creates a singular self-interaction potential which may be…

材料科学 · 物理学 2025-10-13 Y. M. Beltukov , A. V. Rodina , A. Alekseev , Al. L. Efros

Nanoscale diffusion at the interfaces in multilayers plays a vital role in controlling their physical properties for a variety of applications. In the present work depth-dependent interdiffusion in a Si/Fe/Si trilayer has been studied with…

介观与纳米尺度物理 · 物理学 2013-05-29 Ajay Gupta , Dileep Kumar , Vaishali Phatak

We study theoretically the optical properties of quantum tubes, one-dimensional semiconductor nanostructures where electrons and holes are confined to a cylindrical shell. In these structures, which bridge between 2D and 1D systems, the…

材料科学 · 物理学 2015-05-18 David Kammerlander , Filippo Troiani , Guido Goldoni

Doppler broadening in thermal ensembles degrades the absorption cross-section and the coherence time of collective excitations. In two photon transitions, it is common to assume that this problem becomes worse with larger wavelength…

原子物理 · 物理学 2019-11-22 Ran Finkelstein , Ohr Lahad , Ohad Michel , Omri Davidson , Eilon Poem , Ofer Firstenberg

Absorption spectra of neutral, negatively and positively charged semiconductor quantum dots are studied theoretically. We provide an overview of the main energetic structure around the p-shell transitions, including the influence of nearby…

介观与纳米尺度物理 · 物理学 2018-02-28 Matthias Holtkemper , Doris E. Reiter , Tilmann Kuhn

Within the framework of staircase infinitely deep (SIW) potential well model the effect of dielectric constant mismatch between the size-quantized semiconducting wire, coating and surrounding environment on impurity binding energy is…

材料科学 · 物理学 2009-10-31 Mher M. Aghasyan , Albert A. Kirakosyan

We study the dark excitons at the interface of sharp lateral heterostructure of two-dimensional transition metal dichalcogenides. By introducing a low-energy effective Hamiltonian model, we find the energy dispersion relation of exciton and…

介观与纳米尺度物理 · 物理学 2025-08-19 Hamidreza Simchi

We study the energy spectra of bound states in quantum dots (QDs) formed by an electrostatic potential in two-dimensional topological insulator (TI) and their transformation with changes in QD depth and radius. It is found that, unlike a…

介观与纳米尺度物理 · 物理学 2017-04-27 Aleksei A. Sukhanov

We report on spectroscopy of a single dopant atom in silicon by resonant tunneling between source and drain of a gated nanowire etched from silicon on insulator. The electronic states of this dopant isolated in the channel appear as…

介观与纳米尺度物理 · 物理学 2009-11-11 H. Sellier , G. P. Lansbergen , J. Caro , N. Collaert , I. Ferain , M. Jurczak , S. Biesemans , S. Rogge

A tight binding supercell approach is used for the calculation of the electronic structure of the (111) LaAlO$_3$/SrTiO$_3$ interface. The confinement potential at the interface is evaluated solving a discrete Poisson equation by means of…

One of the most significant research interests in the field of electronics is that on quantum dot, because such materials have electronic properties intermediate between those of bulk semiconductors and those of discrete molecules.…

Interfaces remain one of the major issues in limiting the understanding and designing polymer nanocomposites due to their complexity and pivotal role in determining the ultimate composites properties. In this study, we take multi-walled…

材料科学 · 物理学 2017-11-20 Yuhan Li , Faxiang Qin , Huan Wang , Hua-Xin Peng

The tunability of binding energies is explored by modulating a finite dielectric slab width in a planar, three dielectric system. After verifying the equivalence of the field method and method of images, three different configurations are…

量子物理 · 物理学 2013-12-31 Srihari Sritharan