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相关论文: Does Silicene on Ag(111) Have a Dirac Cone?

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Using atomic resolved scanning tunneling microscopy, we present here the experimental evidence of a silicene sheet (graphene like structure) epitaxially grown on a close-packed silver surface (Ag(111)). This has been achieved via direct…

PtBi2 with a layered trigonal crystal structure was recently reported to exhibit an unconventional large linear magnetoresistance, while the mechanism involved is still elusive. Using high resolution angle-resolved photoemission…

Materials harboring exotic quasiparticles, such as Dirac and Weyl fermions\cite{xu2015discovery,borisenko2015time,weng2015weyl,xu2015observation}, have garnered much attention from the physics and material science communities. These…

Epitaxial graphene, grown on SiC(0001) surface, has been widely studied both experimentally and theoretically. It was found that first epitaxial graphene layer in such structures is a buffer layer i.e. there are no characteristic Dirac…

材料科学 · 物理学 2015-03-13 Jakub Soltys , Jacek Piechota , Michal Lopuszynski , Stanislaw Krukowski

Aims. High angular resolution N-band imaging is used to discern the torus of active galactic nuclei (AGN) from its environment in order to allow a comparison of its mid-infrared properties to the expectations of the unified scenario for…

星系天体物理 · 物理学 2009-11-13 Hannes Horst , Wolfgang J. Duschl , Poshak Gandhi , Alain Smette

Dirac electrons in solids show characteristic physical properties due to their linear dispersion relation and two-band nature. Although the transport phenomena of Dirac electrons in a normal state have intensively been studied, the…

超导电性 · 物理学 2015-07-17 Tomonari Mizoguchi , Masao Ogata

Group V element analogues of graphene have attracted a lot attention recently due to their semiconducting band structures, which make them promising for next generation electronic and optoelectronic devices based on two-dimensional…

材料科学 · 物理学 2020-03-24 J. Shah , W. Wang , H. M. Sohail , R. I. G. Uhrberg

We present a microwave realization of finite tight-binding graphene-like structures. The structures are realized using discs with a high index of refraction. The discs are placed on a metallic surface while a second surface is adjusted atop…

介观与纳米尺度物理 · 物理学 2010-09-24 U. Kuhl , S. Barkhofen , T. Tudorovskiy , H. -J. Stoeckmann , T. Hossain , L. de Forges de Parny , F. Mortessagne

Silver dimers were fabricated on Ag(111) by single-atom manipulation using the tip of a cryogenic scanning tunnelling microscope. An unoccupied electronic resonance was observed to shift toward the Fermi level with decreasing atom-atom…

材料科学 · 物理学 2015-05-13 Alexander Sperl , Joerg Kroeger , Richard Berndt , Andreas Franke , Eckhard Pehlke

The two-dimensional silicon allotrope, silicene, could spur the development of new and original concepts in Si-based nanotechnology. Up to now silicene can only be epitaxially synthesized on a supporting substrate such as Ag(111). Even…

材料科学 · 物理学 2016-05-06 Dmytro Solonenko , Ovidiu D. Gordan , Guy Le Lay , Dietrich R. T. Zahn , Patrick Vogt

We report calculations of the electronic structure of silicene and the stability of its weakly buckled honeycomb lattice in an external electric field oriented perpendicular to the monolayer of Si atoms. We find that the electric field…

介观与纳米尺度物理 · 物理学 2012-02-23 N. D. Drummond , V. Zolyomi , V. I. Fal'ko

The intriguing properties, especially Dirac physics in graphene, have inspired the pursuit of two-dimensional materials in honeycomb structure. Here we achieved a monolayer transition metal monochalcogenide AgTe on Ag(111) by tellurization…

We report first-principles results on the electronic structure of various silicene structures. For planar and simply buckled silicenes, we confirm their zero-gap nature and show a significant renormalization of their Fermi velocity by…

介观与纳米尺度物理 · 物理学 2015-06-12 Shouting Huang , Wei Kang , Li Yang

The electronic properties of one- and two-dimensional biphenylene-based systems, such as nanoribbons and bilayers, are studied within a unified approach. Besides the bilayer with direct (AA) stacking, we present two additional symmetric…

介观与纳米尺度物理 · 物理学 2024-11-08 L. L. Lage , O. Arroyo-Gascón , Leonor Chico , A. Latgé

We study how the electronic structure of the bilayer graphene (BLG) is changed by electric field and strain from {\it ab initio} density-functional calculations using the LMTO and the LAPW methods. Both hexagonal and Bernal stacked…

材料科学 · 物理学 2010-03-10 B. R. K. Nanda , S. Satpathy

We study the band dispersion of graphene with randomly distributed structural defects using two complementary methods, exact diagonalization of the tight-binding Hamiltonian and implementing a self-consistent T matrix approximation. We…

The morphology and electronic structure of pentacene (Pn) deposited on Cu(111) was studied using scanning tunneling microscopy (STM) and spectroscopy (STS). Deposition of a multilayer followed by annealing to reduce coverage to a monolayer…

介观与纳米尺度物理 · 物理学 2011-10-24 Joseph Smerdon , Matthias Bode , Nathan Guisinger , Jeffrey Guest

In this work, we report the growth of a single mixed Bi$_{1-x}$Sb$_x$ layer, with diverse stoichiometries, on a Ag(111) substrate. The atomic geometry has been thoroughly investigated by low energy electron diffraction, scanning tunneling…

材料科学 · 物理学 2024-03-25 Javier D. Fuhr , J. Esteban Gayone , Hugo Ascolani

Massless Dirac fermions in an electric field propagate along the field lines without backscattering, due to the combination of spin-momentum locking and spin conservation. This phenomenon, known as "Klein tunneling", may be lost if the…

介观与纳米尺度物理 · 物理学 2022-07-08 A. Donís Vela , G. Lemut , M. J. Pacholski , J. Tworzydło , C. W. J. Beenakker

Two quintuple layers of strong topological insulator Bi2Se3 are coupled by a Bi bilayer in BiSe crystal. We investigated its electronic structure using angle resolved photoelectron spectroscopy to study its topological nature. Dirac like…

材料科学 · 物理学 2023-10-31 H. Lohani , K. Majhi , R. Ganesan , S. Gonzalez , G. Di Santo , L. Petaccia , P. S. Anil Kumar , B. R. Sekhar