相关论文: Finite-size effect in shot noise in hopping conduc…

A short summary of the drift-diffusion-Langevin formalism for calculating finite-frequency shot noise in diffusive conductors is presented. Two new results are included in this presentation. First, we arrive at a simple (but accurate)…

We have systematically measured the shot noise in a single electron transistor (SET) as a function of bias and gate voltages. By embedding a SET in a resonance circuit we have been able to measure its shot noise at the resonance frequency…

Shot noise measurements in quantum point contacts are a powerful tool to investigate charge transport in the integer and fractional quantum Hall regime, in particular to unveil the charge, quantum statistics and tunneling dynamics of edge…

We develop a system for measurements of power spectra of transmitted light intensity fluctuations, in which the extraneous noise, including shot noise, is reduced. In essence, we just apply light, measure the power of the transmitted light…

Post-reionisation 21cm intensity mapping experiments target the spectral line of neutral hydrogen (HI) resident in dark matter haloes. According to the halo model, these discrete haloes trace the continuous dark matter density field down to…

We have used Monte Carlo simulation to calculate the shot noise intensity $S_I(\omega)$ at 2D hopping using two models: a slanted lattice of localized sites with equal energies and a set of localized sites with random positions and…

A fractional quasiparticle charge is a manifestation of strong interactions in the fractional quantum Hall effect. Nevertheless, shot noise of quasiparticles is well described by a formula, derived for noninteracting charges. We explain the…

We present a novel method for the evaluation of shot noise in quasi one-dimensional field-effect transistors, such as those based on carbon nanotubes and silicon nanowires. The method is derived by using a statistical approach within the…

We performed noise measurements in a two-dimensional electron gas to investigate the nonequilibrium quantum Hall effect (QHE) state. While excess noise is perfectly suppressed around the zero-biased QHE state reflecting the dissipationless…

We have investigated electrical transport and shot noise in graphene field effect devices. In large width over length ratio $W/L$ graphene strips, we have measured shot noise at low frequency ($f$ = 600--850 MHz) in the temperature range of…

We analyze the shot noise in a voltage biased superconducting quantum point-contact. Results are presented for the single channel case with arbitrary transmission. In the limit of very low transmission it is found that the effective charge,…

We present an expression for the shot noise power spectral density in quasi-one dimensional conductors electrostatically controlled by a gate electrode, that includes the effects of Coulomb interaction and of Pauli exclusion among charge…

In a 'controlled dephasing' experiment [1-3], an interferometer loses its coherence due to entanglement with a controlled quantum system ('which path' detector). In experiments that were conducted thus far in mesoscopic systems only partial…

We present a theoretical framework for characterizing incremental stability of nonlinear stochastic systems perturbed by compound Poisson shot noise and finite-measure L\'{e}vy noise. For each noise type, we compare trajectories of the…

The injection of electrons in the bulk of carbon nanotube which is connected to ideal Fermi liquid leads is considered. While the presence of the leads gives a cancellation of the noise cross-correlations, the auto-correlation noise has a…

We investigate shot noise of photon-excited electron-hole pairs in open multi-terminal, multi-channel chaotic dots. Coulomb interactions in the dot are treated self-consistently giving a gauge-invariant expression for the finite frequency…

The shot noise in long diffusive SNS contacts is calculated using the semiclassical approach. At low frequencies and for purely elastic scattering, the voltage dependence of the noise is of the form S_I = (4\Delta + 2eV)/3R. The…

We show that shot noise in a resonant tunneling diode biased in the negative differential resistance regions of the I-V characteristic is enhanced with respect to ``full'' shot noise. We provide experimental results showing a Fano factor up…

We investigate the correlations in the current fluctuations at different terminals of metallic diffusive conductors. We start from scattering matrix expressions for the shot noise and use the Fisher-Lee relation in combination with diagram…

We carry out a self-consistent analytical theory of unipolar current and noise properties of metal-semiconductor-metal structures made of highly resistive semiconductors in the presence of an applied bias of arbitrary strength. By including…