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We report on the stability of the quantum Hall plateau in wide Hall bars made from a chemically gated graphene film grown on SiC. The $\nu=2$ quantized plateau appears from fields $B \simeq 5$ T and persists up to $B \simeq 80$ T. At high…

Metrological investigations of the quantum Hall effect (QHE) completed by transport measurements at low magnetic field are carried out in a-few-$\mu\mathrm{m}$-wide Hall bars made of monolayer (ML) or bilayer (BL) exfoliated graphene…

介观与纳米尺度物理 · 物理学 2013-08-26 J. Guignard , D. Leprat , D. C. Glattli , F. Schopfer , W. Poirier

We have performed a metrological characterization of the quantum Hall resistance in a 1 $\mu$m wide graphene Hall-bar. The longitudinal resistivity in the center of the $\nu=\pm 2$ quantum Hall plateaus vanishes within the measurement noise…

介观与纳米尺度物理 · 物理学 2008-12-10 A. J. M. Giesbers , G. Rietveld , E. Houtzager , U. Zeitler , R. Yang , K. S. Novoselov , A. K. Geim , J. C. Maan

In this report we experimentally probe the non-equilibrium breakdown of the quantum Hall state in monolayer graphene by injecting a high current density ($\sim$1A/m). The measured critical currents for dissipationless transport in the…

介观与纳米尺度物理 · 物理学 2010-04-13 Vibhor Singh , Mandar M. Deshmukh

In the quantum Hall regime the charge current is carried by ideal one-dimensional edge channels where the backscattering is prohibited by topology. This results in the constant potential along the edge of the Hall bar leading to zero…

介观与纳米尺度物理 · 物理学 2024-05-21 Alexey A. Kaverzin , Shunsuke Daimon , Takashi Kikkawa , Tomi Ohtsuki , Eiji Saitoh

The quantum anomalous Hall effect (QAHE) realizes dissipationless longitudinal resistivity and quantized Hall resistance without the need of an external magnetic field. However, when reducing the device dimensions or increasing the current…

介观与纳米尺度物理 · 物理学 2024-12-30 Gertjan Lippertz , Andrea Bliesener , Anjana Uday , Lino M. C. Pereira , A. A. Taskin , Yoichi Ando

Microwave transmission line spectroscopy is used to observe the integer quantum Hall effect in two samples of monolayer graphene with different geometries that are resistively-coupled to a coplanar waveguide. We find plateaus in transmitted…

介观与纳米尺度物理 · 物理学 2024-10-25 Scott Dietrich , Arash Akbari-Sharbaf , James H. Edgar , Alex Roubos , Matthew Freeman , Lloyd W. Engel

We analyze the quantum Hall effect in single layer graphene with bilayer stripe defects. Such defects are often encountered at steps in the substrate of graphene grown on silicon carbide. We show that AB or AA stacked bilayer stripes result…

介观与纳米尺度物理 · 物理学 2013-05-29 Tomas Lofwander , Pablo San-Jose , Elsa Prada

In the quantum anomalous Hall effect, quantized Hall resistance and vanishing longitudinal resistivity are predicted to result from the presence of dissipationless, chiral edge states and an insulating 2D bulk, without requiring an external…

介观与纳米尺度物理 · 物理学 2018-09-12 E. J. Fox , I. T. Rosen , Yanfei Yang , George R. Jones , Randolph E. Elmquist , Xufeng Kou , Lei Pan , Kang L. Wang , D. Goldhaber-Gordon

We have measured the quantum Hall effect in monolayer graphene samples that were exposed to a cold hydrogen plasma leading to a hydrogenation level of a few percent. Compared to pristine graphene, the Landau level distance significantly…

Following recent experiments, we consider current flow in two dimensional electronic systems in the quantum Hall regime where a gradient in the electron density induces a spatial variation in the Hall resistivity. Describing the system in…

介观与纳米尺度物理 · 物理学 2009-11-11 R. Ilan , N. R. Cooper , Ady Stern

By studying the quantum Hall effect of stationary states with high values of injected current using a von Neumann lattice representation, we found that broadening of extended state bands due to a Hall electric field occurs and causes the…

介观与纳米尺度物理 · 物理学 2009-10-31 Kenzo Ishikawa , Nobuki Maeda , Tetsuyuki Ochiai , Hisao Suzuki

We numerically study the quantum Hall effect in biased bilayer graphene based on a tight-binding model in the presence of disorder. Integer quantum Hall plateaus with quantized conductivity $\sigma_{xy}=\nu e^2/h$ (where $\nu$ is any…

介观与纳米尺度物理 · 物理学 2009-07-29 R. Ma , L. J. Zhu , L. Sheng , M. Liu , D. N. Sheng

One of the most distinctive features of graphene is its huge inter-Landau-level splitting in experimentally attainable magnetic fields which results in the room-temperature quantum Hall effect. In this paper we calculate the longitudinal…

介观与纳米尺度物理 · 物理学 2015-12-07 A. M. Alexeev , R. R. Hartmann , M. E. Portnoi

Precision measurements of the quantum Hall resistance with alternating current (ac) in the kHz range were performed on epitaxial graphene in order to assess its suitability as a quantum standard of impedance. The quantum Hall plateaus…

介观与纳米尺度物理 · 物理学 2014-08-25 C. -C. Kalmbach , J. Schurr , F. J. Ahlers , A. Müller , S. Novikov , N. Lebedeva , A. Satrapinski

A numerical study is made of current distribution in small Hall bars with disorder. It is observed, in particular, that in the Hall-plateau regime the Hall current tends to concentrate near the sample edges while it diminishes on average in…

介观与纳米尺度物理 · 物理学 2009-10-31 K. Shizuya

In electrical metrology, the quantum Hall effect is accessed at the Landau level filling factor {\nu} = 2 plateau to define and disseminate the unit of electrical resistance (ohm). The robustness of the plateau is only exhibited at this…

In this work, limiting factors for developing metrologically useful arrays from epitaxial graphene on SiC are lifted with a combination of centimeter-scale, high-quality material growth and the implementation of superconducting contacts.…

Quantum Hall effect (QHE) devices based on epitaxial graphene films grown on SiC were fabricated and studied for development of the QHE resistance standard. The graphene-metal contacting area in the Hall devices has been improved and…

介观与纳米尺度物理 · 物理学 2014-12-09 S. Novikov , N. Lebedeva , K. Pierz , A. Satrapinski

Breakdown of the quantum Hall effect (QHE) is commonly associated with an electric field approaching the inter Landau-level (LL) Zener field, ratio of the Landau gap and cyclotron radius. Eluded in semiconducting heterostructures, in spite…

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