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相关论文: Growth Morphology of Boron Doped Single Crystal Di…

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The boron-doped single crystal diamond films were grown homoepitaxially on synthetic (100) oriented Type Ib diamond substrates using a Microwave Plasma Chemical Vapor Deposition (MPCVD) technique. Raman spectrum showed a few additional…

材料科学 · 物理学 2013-02-01 Sunil K. Karna , Yogesh. K. Vohra , Samuel T. Weir

In this work we have demonstrated the growth of nanocrystalline diamond on boron nitride ceramic. We measured the zeta potential of the ceramics to select the diamond seeds. Diamond was then grown on the seeded ceramics using a microwave…

We report optical reflectivity study on pure and boron-doped diamond films grown by a hot-filament chemical vapor deposition method. The study reveals the formation of an impurity band close to the top of the valence band upon boron-doping.…

超导电性 · 物理学 2009-11-11 Dan Wu , Y. C. Ma , Z. L. Wang , Q. Luo , C. Z. Gu , N. L. Wang , C. Y. Li , X. Y. Lu , Z. S. Jin

Ultrananocrystalline diamond/hydrogenated amorphous carbon composite thin films synthesized via coaxial arc plasma possess a marked structural feature of diamond grains embedded in an amorphous carbon and a hydrogenated amorphous carbon…

材料科学 · 物理学 2021-08-24 Naofumi Nishikawa

We report the results of the investigation of bulk and surface acoustic phonons in the undoped and boron-doped single-crystal diamond films using the Brillouin-Mandelstam light scattering spectroscopy. The evolution of the optical phonons…

Herein, we report on the improvement of structural quality and enhancement of photoluminescence (PL) emission for an optimally N doped nanocrystalline diamond (NCD) film. Pure and N doped nanocrystalline diamond films are synthesized on Si…

材料科学 · 物理学 2020-06-05 K. Ganesan , P. K. Ajikumar , S. K. Srivatava , P. Magudapathy

Diamond-like carbon (DLC) films are synthesized on Si using plasma enhanced chemical vapor deposition. The role of substrate bias and nitrogen doping on the structural evolution and local elastic modulus of DLC films are systematically…

材料科学 · 物理学 2017-04-10 S. R. Polaki , K. Ganesan , S. K. Srivastava , M. Kamruddin , A. K. Tyagi

The doping of graphene to tune its electronic structure is essential for its further use in carbon based electronics. Adapting strategies from classical silicon based semiconductor technology, we use the incorporation of heteroatoms in the…

Diamond is an outstanding semiconductor for extreme electronics, yet reproducible n-type doping remains a long-standing challenge. Here we demonstrate stable n-type single-crystal diamond grown in a single step by a precisely controlled…

Boron-doped diamond crystals (BDD, C$_{1-x}$B$_{x}$) exhibit exceptional mechanical strength, electronic tunability, and resistance to radiation damage. This makes them promising materials for use in gamma-ray crystal-based light sources.…

The structural, optical and magnetic properties of the Zn1-xMnxO (0 < x < 0.05) thin films synthesized by sol-gel technique have been analyzed in the light of modification of the electronic structure and disorder developed in the samples…

材料科学 · 物理学 2015-06-11 R. Karmakar , S. K. Neogi , Aritra Banerjee , S. Bandyopadhyay

The production of negative ions is of significant interest for applications including mass spectrometry, particle acceleration, material surface processing, and neutral beam injection for magnetic confinement fusion. Methods to improve the…

Chemical-Vapor-Deposition (CVD) diamond films were prepared using a variation of nitrogen addition into the gas source admixture by a direct current CVD method. The influence of nitrogen addition on the crystallographic texture and grain…

材料科学 · 物理学 2008-12-23 T. Liu , D. Raabe

We report the growth of high quality rhombohedral boron nitride (rBN) crystals by the iron flux method at atmospheric pressure. In contrast to the lamellar structure of standard hexagonal boron nitride (hBN) covering the metal ingot, the…

材料科学 · 物理学 2025-09-23 W. Desrat , M. Moret , J. Plo , T. Michel , A. Ibanez , P. Valvin , V. Jacques , I. Philip-Robert , G. Cassabois , B. Gil

Detailed structural and electrical properties of ultra-nano-crystalline diamond (UNCD) films grown in H$_\text{2}$/CH$_\text{4}$/N$_\text{2}$ plasma were systematically studied as a function of deposition temperature ($T_d$) and nitrogen…

材料科学 · 物理学 2019-10-23 Tanvi Nikhar , Robert Rechenberg , Michael Becker , Sergey V. Baryshev

In this paper, theoretical and numerical analyses are conducted of the profiles of the planar (-110) crystallographic direction in the diamond layer doped with boron atoms. The planar profiles for periodic doping following several ideal…

加速器物理 · 物理学 2025-06-23 Andrei V. Korol , Andrey V. Solov'yov

In monolayer graphene, substitutional doping during growth can be used to alter its electronic properties. We used scanning tunneling microscopy (STM), Raman spectroscopy, x-ray spectroscopy, and first principles calculations to…

Boron-doped diamond (BDD) films are becoming increasingly popular as electrode materials due to their broad potential window and stability in harsh conditions and environments. Therefore, optimizing the crystal quality and minimizing defect…

Isotopic substitution of boron and carbon is applied for the identification of the vibrational modes of heavily boron-doped diamond synthesized by high-pressure high-temperature technique. None of the bands in the Raman spectra are shifting…

材料科学 · 物理学 2008-01-11 I. I. Vlasov , E. A. Ekimov , A. A. Basov , E. Goovaerts , A. V. Zoteev

Chemical vapour deposition (CVD) grown nanocrystalline diamond is an attractive material for the fabrication of devices. For some device architectures, optimisation of its growth on silicon nitride is essential. Here, the effects of three…

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